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Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process

A planar imaging and chemical etching technology, which is applied in sustainable manufacturing/processing, final product manufacturing, semiconductor/solid-state device manufacturing, etc., to achieve the effects of high flatness, good selectivity, and simple operation of the etched surface

Inactive Publication Date: 2007-11-14
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no literature that discloses the relevant reports on the use of chemical etching in the fabrication process of zinc oxide UV focal plane imaging columns.

Method used

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  • Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process
  • Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process
  • Chemical etching method for zinc oxide ultraviolet focal-plane imaging array preparing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A kind of chemical etching method that is used in zinc oxide ultraviolet focal plane imaging array manufacturing process, this method first uses the mask of zinc oxide material as shown in Figure 1 to use conventional photolithography method, and uses Nikon ECLIPSE LV150 type industrial Observation with optical microscope, then, use the ammonium chloride (NH 4 Cl) solution for etching. When the substrate is to be etched, use a Nikon ECLIPSELV150 industrial optical microscope to observe. As shown in Figure 3, the mask of the zinc oxide material is intact, which proves that the etching selectivity of ammonium chloride is very good. Then, after removing the photoresist on the mask, use the Nikon ECLIPSE LV150 type industrial optical microscope to observe, as shown in Figure 4, finally obtain a smooth etching surface on the zinc oxide film; as shown in Figure 5, A better aspect ratio of the zinc oxide ultraviolet focal plane imaging array can be obtained on the profile of ...

Embodiment 2

[0031] A kind of chemical etching method that is used in the zinc oxide ultraviolet focal plane imaging array manufacturing process, first uses the mask that adopts conventional photolithography method to make the zinc oxide material as shown in Figure 1, and uses Nikon ECLIPSE LV150 type industrial optics Observation with a microscope, and then, using a mass concentration of 5% ammonium chloride (NH 4 Cl) solution for etching. When the substrate is to be etched, use a Nikon ECLIPSELV150 industrial optical microscope to observe, as shown in Figure 6, it is confirmed that ammonium chloride has no etching effect on the mask photoresist. Then, after removing the photoresist on the mask, use the Nikon ECLIPSELV150 industrial optical microscope to observe, as shown in Figure 7, finally a flat etching surface and better zinc oxide ultraviolet focus are obtained on the zinc oxide film. Planar imaging array aspect ratio. The film thickness of the zinc oxide layer is 1.3 μm, the etch...

Embodiment 3

[0033] A kind of chemical etching method that is used in the zinc oxide ultraviolet focal plane imaging array manufacturing process, first uses the mask that adopts conventional photolithography method to make the zinc oxide material as shown in Figure 1, and uses Nikon ECLIPSE LV150 type industrial optics Observation with a microscope, and then, using a mass concentration of 5% ammonium chloride (NH 4 Cl) solution and heated in a water bath at 30°C for etching. When the mask substrate is to be etched, use a Nikon ECLIPSE LV150 industrial optical microscope to observe, as shown in Figure 8, it is confirmed that ammonium chloride has no etching effect on the mask photoresist. Then remove the photoresist on the mask, and then use the Nikon ECLIPSE LV150 industrial optical microscope to observe, as shown in Figure 9, finally a flat etching surface and better zinc oxide ultraviolet focus are obtained on the zinc oxide film. Planar imaging array aspect ratio. The film thickness o...

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Abstract

This invention discloses a chemical etching method of zinc oxide material in production of ultraviolet detection focal plane imaging array, in which firstly prepare zinc oxide material mask and then make it conduct etching through ammonium chloride aqueous solution, for improving etching effect the etching liquid is heated in water bath. The etching method using ammonium chloride solution as an etching agent, it has the following advantages: (1) high flatness of etching surface (2) very good etching slectivity (3) can reach very good aspect ratio requirements; (4) has no impurity ions pollution to the sample to be etched and no effect to part charateristics (5) only change the concentration of ammonium chloride variable etching rates can be obtained while ensuring the etching surface flat and good aspect ratio and meanwhile operation is very simple. (6) the etching depth can be controlled by controlling etching time.

Description

technical field [0001] The invention belongs to the field of semiconductor device manufacturing technology, and relates to a chemical etching method, in particular to a wet etching method of zinc oxide material in the manufacturing technology of zinc oxide ultraviolet focal plane imaging array. Background technique [0002] Ultraviolet detectors are widely used in both military and civilian applications, including missile launch detection, flame sensor, ultraviolet radiation calibration and monitoring, chemical and biological analysis, optical fiber communication and astronomical research. In these applications, high responsivity, fast response time and high signal-to-noise ratio are the device parameters that people pursue. Recently, wide bandgap materials have been widely used to improve the responsivity and reliability of UV detectors. Among them, the zinc oxide material has been widely noticed and researched due to its relatively high response to ultraviolet rays, relat...

Claims

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Application Information

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IPC IPC(8): H01L21/467H01L31/18
CPCY02P70/50
Inventor 张景文高群侯洵
Owner XI AN JIAOTONG UNIV
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