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Preparation method for large-area nano zinc oxide directional array

A nano-zinc oxide, large-area technology, applied in the direction of zinc oxide/zinc hydroxide, liquid chemical plating, superimposed layer plating, etc., can solve poor controllability, high cost of molecular beam epitaxy growth, and is not suitable for large-scale Preparation and production problems, to achieve the effect of uniform appearance and simple process

Inactive Publication Date: 2008-02-13
UNIV OF SCI & TECH BEIJING
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  • Abstract
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Problems solved by technology

Although the physical chemical vapor deposition method is simple, its controllability is poor. The morphology and quality of the synthesized zinc oxide nanoarrays are not high, and it is difficult to achieve large-scale preparation; molecular beam epitaxy is very expensive and not suitable for large-scale Large-area high-quality one-dimensional nano-zinc oxide arrays can be grown at a lower temperature using the solution method. Currently, the solution method is the simplest and most practical method for preparing large-area one-dimensional nano-zinc oxide oriented arrays

Method used

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  • Preparation method for large-area nano zinc oxide directional array
  • Preparation method for large-area nano zinc oxide directional array

Examples

Experimental program
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Effect test

example 1

[0024] 1. Dissolve chemically pure zinc nitrate and hexamethylenetetramine in deionized water, the molar concentration of both is 0.05M, and the pH value of the solution is about 6.62.

[0025] 2. Put the silicon substrate in HNO 3 Ultrasonic cleaning in +HF solution, rinsing with deionized water and alcohol respectively, drying, and then depositing a zinc oxide film with a thickness of 60 nm on the surface of the substrate by magnetron sputtering as a growth substrate.

[0026] 3. Put the treated silicon chip into the solution, seal it and keep it warm at 90°C for 7 hours.

[0027] 4. Take out the substrate, wash it with deionized water and alcohol, and then dry it at 70°C to obtain a large-area one-dimensional nano-zinc oxide array.

[0028] The prepared zinc oxide nano-array has a uniform shape, and the diameter of the nano-rod is about 100 nm.

example 2

[0030] 1. Dissolve chemically pure zinc nitrate and hexamethylenetetramine in deionized water, both of which have a molar concentration of 0.025M, and then add ammonia water to the mixed solution to adjust the pH value of the solution to 10.

[0031] 2. Dissolve chemically pure zinc acetate in alcohol solution, the molar concentration of zinc acetate is 0.5M.

[0032] 2. Put the silicon substrate in HNO 3 +Ultrasonic cleaning in HF solution, rinsed with deionized water and alcohol, and dried; then coated with a uniform layer of zinc acetate solution on the surface of the substrate, dried at 70°C, after drying, repeated the previous process twice to increase the seed layer thickness of;

[0033] 3. Put the treated silicon wafer into the solution, seal it and keep it warm at 90°C for 7 hours;

[0034] 4. Take out the substrate, wash it with deionized water and alcohol, and then dry it at 70°C to obtain a large-area one-dimensional nano-zinc oxide array.

[0035] The prepared ...

example 3

[0037] 1. Dissolve chemically pure zinc nitrate and hexamethylenetetramine in deionized water, both of which have a molar concentration of 0.05M, and then add potassium hydroxide to the mixed solution to adjust the pH value of the solution to 12.

[0038] 2. Put the silicon substrate in HNO 3 Ultrasonic cleaning in +HF solution, rinsing with deionized water and alcohol respectively, drying, and then depositing a zinc oxide film with a thickness of 20 nm on the surface of the substrate by magnetron sputtering as a growth substrate.

[0039] 3. Put the treated silicon chip into the solution, seal it and keep it warm at 90°C for 12 hours.

[0040] 4. Take out the substrate, wash it with deionized water and alcohol, and then dry it at 70°C to obtain a large-area one-dimensional nano-zinc oxide array.

[0041] The prepared zinc oxide nano-array has a uniform shape, and the diameter of the nano-rod is 20-50 nm.

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Abstract

A method of preparing large scale nano zinc dioxide directional array belongs to the technical field of preparation of nano material directional arrays. The technology subsequently includes the following procedures: the silver nitrate and hexamethylenetetramine are diluted into water as a reacting solution, and the pH value of the solution can be regulated by adding alkaline substances; a cleaned basal is provided; a layer of zinc oxide film is deposited on the surface of the basal, or the zinc salt solution well prepared is evenly applied on the surface of the basal and sintered; the treated basal is put into the reacting solution and the temperature is preserved for a period of time; the basal is taken out, cleaned and dried, and the nano zinc dioxide array is obtained. The invention has advantages that high orientation and high purity nano zinc dioxide arrays can be rapidly prepared on a large area, the shape and appearance can be controlled, the technology is simple and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of preparation of aligned nanomaterials, and in particular provides a method for preparing a large-area nano-zinc oxide oriented array. The oriented nano-zinc oxide array is synthesized through a hydrothermal reaction, and a large-area one-dimensional array is prepared by a simple process. Oriented arrays of ZnO nanoparticles. Background technique [0002] Zinc oxide is an important wide-bandgap semiconductor functional material, with a bandgap of 3.3eV at room temperature, an exciton binding energy as high as 60meV, and strong free exciton transition luminescence in the ultraviolet band. The one-dimensional nanomaterials of zinc oxide have various forms, excellent performance, abundant raw materials, low price, and are non-toxic and harmless to the environment. There are broad application prospects (J.W.Tomm, B.Ullrich, X.G.Qiu, Y.Segawa, A.Ohtomo, M.Kawasaki, and H.Koinuma.Optical and photoelectrical prop...

Claims

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Application Information

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IPC IPC(8): C23C28/00C23C18/00C23C14/08C23C14/24C23C14/34C01G9/02C03C17/23C04B41/50
Inventor 张跃廖庆亮黄运华齐俊杰高战军张晓梅
Owner UNIV OF SCI & TECH BEIJING
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