Method of producing carbon nano-tube array field emission cathode
A carbon nanotube array, field emission cathode technology, applied in cold cathode manufacturing, discharge tube/lamp manufacturing, electrode system manufacturing, etc., can solve problems such as poor emission efficiency, high cost, and difficulty in removing organic matter, and achieve a simple process. , the effect of low cost
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0031] Embodiment 1: In this embodiment, a metal mask is taken as an example for illustration. Specific steps are as follows:
[0032] 1. Use semiconductor standard cleaning technology for silicon wafers (such as: Yan Zhirui, Development Direction of Semiconductor Silicon Wafer Cleaning Technology, Special Equipment for Electronic Industry, 2003, September, p23-26), to clean single-sided polished silicon wafers.
[0033] 2. Using radio frequency reactive magnetron sputtering coating process, deposit a 200nm thick titanium nitride barrier layer on the clean silicon wafer surface.
[0034] 3. A metal mask with holes and regularly arranged is attached to the silicon wafer coated with titanium nitride, and metal Ni is plated by radio frequency sputtering with a thickness of 20 nanometers.
[0035] 4. Put the substrate plated with the nickel array down, facing the middle of the flame of burning ethanol (analytical pure) for 1-30 minutes, and grow carbon nanotubes on the edge of th...
Embodiment 2
[0039]Embodiment 2: In this embodiment, a low-melting-point metal is used as an example for illustration. Specific steps are as follows:
[0040] 1. Using radio frequency reactive magnetron sputtering coating process, deposit a 150nm thick carbon nitride barrier layer on a clean silicon wafer.
[0041] 2. Using traditional semiconductor photolithography technology, Al dot arrays (thickness 40nm) are plated on carbon nitride by thermal evaporation coating process, and Fe catalyst layer (thickness 20nm) is plated on it by electron beam evaporation coating process . An Fe / Al composite catalyst array layer is formed.
[0042] 3. Put the substrate plated with the FeAl composite catalyst array face down, facing the middle of the burning acetylene flame for 1-30 minutes, and grow carbon nanotubes on the catalyst. Figures 4 and 5 are pictures of the morphology of the obtained carbon nanotubes observed under a scanning electron microscope.
[0043] 4. Place the silicon wafer with c...
Embodiment 3
[0045] Embodiment 3: In this embodiment, a low-melting-point metal is used and a metal mask process is used as an example for illustration. Specific steps are as follows:
[0046] 1. Using the radio frequency reactive magnetron sputtering coating process, a 200nm thick hafnium nitride barrier layer is deposited on a clean molybdenum sheet.
[0047] 2. Utilize the metal mask plate masking process, adopt the magnetron sputtering coating process, plate the Sn dot array (thickness is 40nm) on the hafnium nitride, and then use the sputtering coating process to coat the Co catalyst layer (thickness is 30nm). A Co / Sn composite catalyst array layer is formed.
[0048] 3. Put the substrate coated with the Co / Sn composite catalyst array face down, facing the middle of the burning petroleum liquefied gas flame for 1-30 minutes, and grow carbon nanotubes on the catalyst. FIG. 7 is a picture of the morphology of the obtained carbon nanotubes observed under a scanning electron microscope...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More