Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing of low stress chromium nitride multilayer hard film

A chromium nitride, low-stress technology, applied in the field of preparation of low-stress chromium nitride multilayer hard film, can solve the problems of Cr/CrN film hardness limitation, stress reduction, etc., and achieve smooth surface, low internal stress, and defects little effect

Inactive Publication Date: 2009-01-07
SOUTHWEST JIAOTONG UNIV
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method relies on the deformation of the metal soft film layer to absorb part of the strain and reduce the stress. Due to the softness of Cr, the improvement of the overall hardness of the Cr / CrN film is limited.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing of low stress chromium nitride multilayer hard film
  • Method for preparing of low stress chromium nitride multilayer hard film
  • Method for preparing of low stress chromium nitride multilayer hard film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A specific embodiment of the present invention is that a method for preparing a low-stress chromium nitride multilayer hard film is carried out by using an unbalanced magnetron sputtering device, and the specific method is:

[0022] A. Cleaning Put the workpiece cleaned by acetone and absolute ethanol in a vacuum chamber, use more than 99.99% pure chromium as the target, close the vacuum chamber, and evacuate to 3.0×10 -3 When Pa, argon gas is introduced to make the pressure in the vacuum chamber reach 1~2Pa, turn on the bias power supply, apply -1500V bias voltage to the workpiece, glow discharge to form argon plasma, and clean the workpiece by argon plasma sputtering 10 minutes; turn on the power of the target, apply a current of 3A to pre-sputter cleaning the target for 5 minutes to remove impurities such as oxides and nitrides on the surface of the target.

[0023] B. Chromium transition layer deposition After cleaning is completed, adjust the argon pressure to 10 -1 ~1...

Embodiment 2～12

[0027] Embodiments 2-12 are basically the same as Embodiment 1, except that during the C-step chromium nitride film deposition process, the workpiece bias voltage amplitude is set differently, the deposition time is different, the deposition thickness is different, and the number of repetitions is different. The specific values ​​are shown in the following table (in order to better represent the different process conditions of each embodiment, the relevant parameters of Example 1 are also listed in the following table, and the number of repetitions in the table includes the first time):

[0028] The process parameters of Examples 1-12 and the thickness of the deposited chromium nitride multilayer hard film

[0029]

[0030] Figure 1a This is the test result of the bonding force of the low-stress chromium nitride hard film prepared by the method of Example 1 of the present invention. In the scratch test, when the load was increased to 1200mN, the friction coefficient and acoust...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Compressive stressaaaaaaaaaa
Login to View More

Abstract

The invention relates to a manufacturing method of a low-stress multi-layer hard chromium nitride film. Non-equilibrium magnetron sputtering equipment is used for processing. The method comprises procedures as follows: (1) cleaning is processed; (2) a chromium transition layer is deposited; (3) and a multi-layer chromium nitride film is deposited. High purity argon under the pressure of 0.65*<-1>Pa to 5*10<-1>Pa passes through a vacuum chamber; meanwhile, high purity nitrogen under the pressure of 0.65*<-1>Pa to 5*10<-1>Pa in the vacuum chamber is used as reaction gas. A work piece is put under the negative bias of -150 to 400V; the sputtering power of a chromium target is turned on to deposit a layer of compressive stress chromium nitride film; afterwards, the work piece is put under the negative bias of 0 to -100V; the sputtering power of the chromium target is turned on again to deposit a layer of pulling stress chromium nitride film; and the procures are repeated twice to forty times. The manufacturing method is easy to be operated and has low cost. The chromium nitride film manufactured by the method is thick and hard and has good film base bonding capacity, high consistency, smooth surface and strong corrosion resistance.

Description

Technical field [0001] The invention relates to a method for preparing a surface film, in particular to a method for preparing a low-stress chromium nitride multilayer hard film. Background technique [0002] The structure of chromium nitride film is usually a mixture of metal bonds and covalent bonds. It has the characteristics of metal crystals and covalent crystals, and has a series of excellent properties, including excellent surface hardness, toughness, wear resistance and high temperature stability , The high deposition rate of chromium nitride film is conducive to mass industrial production. The chromium nitride film is a titanium-free coating, suitable for cutting titanium and titanium alloys, copper, aluminum and other soft materials. It has good chemical stability and does not produce sticky chips. It meets the high technical requirements of modern manufacturing for metal cutting tools. , Can also be widely used in machinery manufacturing, automobile industry, textile i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/35C23C14/06C23C14/54
Inventor 冷永祥黄楠孙鸿杨苹王进陈俊英吴燕萍
Owner SOUTHWEST JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com