Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing of low stress chromium nitride multilayer hard film

A chromium nitride and low stress technology, which is applied in the field of preparation of low stress chromium nitride multilayer hard films, can solve problems such as stress reduction and hardness limitation of Cr/CrN films, and achieves low internal stress, smooth surface, combined with high intensity effect

Inactive Publication Date: 2010-01-06
SOUTHWEST JIAOTONG UNIV
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method relies on the deformation of the metal soft film layer to absorb part of the strain and reduce the stress. Due to the softness of Cr, the improvement of the overall hardness of the Cr / CrN film is limited.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing of low stress chromium nitride multilayer hard film
  • Method for preparing of low stress chromium nitride multilayer hard film
  • Method for preparing of low stress chromium nitride multilayer hard film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A kind of embodiment of the present invention is, a kind of preparation method of low-stress chromium nitride multilayer hard film, adopts unbalanced magnetron sputtering equipment to carry out, and its specific method is:

[0022] A. Cleaning Place the workpiece cleaned with acetone and absolute ethanol in a vacuum chamber, use more than 99.99% pure chromium as the target material, close the vacuum chamber, and evacuate to 3.0×10 -3 At Pa, argon gas is introduced to make the pressure in the vacuum chamber reach 1-2Pa, the bias power is turned on, and a bias voltage of -1500V is applied to the workpiece, and argon plasma is formed by glow discharge, and the workpiece is cleaned by argon plasma sputtering 10 minutes; turn on the power of the target, apply a current of 3A to pre-sputter and clean the target for 5 minutes, and remove impurities such as oxides and nitrides on the surface of the target.

[0023] B. After the deposition and cleaning of the chromium transition...

Embodiment 2～12

[0027] Embodiments 2 to 12 are basically the same as Embodiment 1, except that in the C-step chromium nitride film deposition process, the workpiece bias voltage amplitude is set differently, the deposition time is different, the thickness of the deposition is different, and the number of repetitions is different. Its concrete numerical value is shown in the following table (in order to better represent the different processing conditions of each embodiment, the relevant parameters of embodiment 1 are also listed in the following table, and the number of repetitions in the table includes the first time):

[0028] The process parameter of embodiment 1~12 and the thickness of the chromium nitride multilayer hard film that deposits

[0029]

[0030] Figure 1a It is the bonding force test result of the low-stress chromium nitride hard film prepared by the method of Example 1 of the present invention. When the load increased to 1200mN in the scratch test, the friction coefficie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
compressive stressaaaaaaaaaa
Login to View More

Abstract

The invention relates to a manufacturing method of a low-stress multi-layer hard chromium nitride film. Non-equilibrium magnetron sputtering equipment is used for processing. The method comprises procedures as follows: (1) cleaning is processed; (2) a chromium transition layer is deposited; (3) and a multi-layer chromium nitride film is deposited. High purity argon under the pressure of 0.65*<-1>Pa to 5*10<-1>Pa passes through a vacuum chamber; meanwhile, high purity nitrogen under the pressure of 0.65*<-1>Pa to 5*10<-1>Pa in the vacuum chamber is used as reaction gas. A work piece is put under the negative bias of -150 to 400V; the sputtering power of a chromium target is turned on to deposit a layer of compressive stress chromium nitride film; afterwards, the work piece is put under the negative bias of 0 to -100V; the sputtering power of the chromium target is turned on again to deposit a layer of pulling stress chromium nitride film; and the procures are repeated twice to forty times. The manufacturing method is easy to be operated and has low cost. The chromium nitride film manufactured by the method is thick and hard and has good film base bonding capacity, high consistency, smooth surface and strong corrosion resistance.

Description

technical field [0001] The invention relates to a method for preparing a surface film, in particular to a method for preparing a low-stress chromium nitride multilayer hard film. Background technique [0002] The structure of chromium nitride film is usually composed of a mixture of metal bonds and covalent bonds, which has the characteristics of metal crystals and covalent crystals, and has a series of excellent properties, including excellent surface hardness, toughness, wear resistance and high temperature stability , The deposition rate of chromium nitride film is high, which is conducive to mass industrial production. Chromium nitride film is a titanium-free coating, suitable for cutting titanium and titanium alloys, copper, aluminum and other soft materials. It has good chemical stability and does not produce sticky chips. It meets the high technical requirements of modern manufacturing for metal cutting tools. , It can also be widely used in machinery manufacturing, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/54
Inventor 冷永祥黄楠孙鸿杨苹王进陈俊英吴燕萍
Owner SOUTHWEST JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com