A method for preparing silicon-based metal nanotubes

A nanotube and metal-based technology, applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the difficulty of controlling the aspect ratio of nanotubes and tube wall thickness, and it is difficult to obtain thick-walled nanotubes and nanotube types Wait for the question

Inactive Publication Date: 2011-12-21
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The template method is a common method for preparing nanomaterials, but there are too few types of nanotubes that can be synthesized by this method, and it is difficult to obtain thick-walled nanotubes; and the electrochemical deposition method, as long as it is a metal that can be electroplated, can be used. method to synthesize nanotubes, but this method is difficult to control the aspect ratio and wall thickness of nanotubes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Example 1: Put a P-type silicon wafer with a resistivity of 0.1 Ω cm into a solution of 80% acetone for 10 minutes of ultrasonic cleaning, and then perform ultrasonic cleaning of 750% absolute ethanol for 15 minutes. After that, the silicon Soak the chip in a mixed solution of 60% sulfuric acid and 50% hydrogen peroxide with a volume ratio of 5:1, take out the silicon chip and wash it with deionized water for 5 times, and put the cleaned silicon chip in 50% hydrogen fluoride Rinse in a mixture of acid and deionized water with a volume ratio of 3:1 for 3 minutes, take out the silicon wafer, clean it with a large amount of deionized water, and then put it into 60% acetone solution and 70% absolute ethanol The solution was ultrasonically cleaned for 10 minutes, and finally the silicon chip was taken out and placed in 50% absolute ethanol solution for use.

[0016] Electrochemical corrosion, first prepare a mixed solution of 5% hydrofluoric acid and 90% absolute ethanol wit...

Embodiment 2

[0018] Embodiment 2: configure the mixed solution that contains trace metal species titanium and cobalt, wherein the concentration of hydrofluoric acid is 2%, the concentration of titanium nitrate is 3000ppb or the concentration of cobalt nitrate is 600ppb, and the silicon chip is respectively immersed in the mixed solution for 15 minutes; The silicon wafer was taken out and rinsed with deionized water.

[0019] Implementation results: Titanium nanotubes and cobalt nanotubes can be obtained respectively, with a tube diameter of about 45nm, uniform tube diameter and wall thickness, and excited by excitation light with an excitation wavelength of 360nm, the luminous efficiency can reach 360 and 175 respectively, and the luminous performance is relatively Stable, the luminous intensity does not decrease after being placed for three months.

Embodiment 3

[0020] Embodiment 3: configure the mixed solution containing chromium and magnesium, wherein the concentration of hydrofluoric acid is 5%, the concentration of chromium nitrate is 6000ppb or the concentration of magnesium nitrate is 1000ppb, the silicon chip is respectively immersed in the mixed solution for 2 minutes, and the silicon chip is taken out. Rinse with deionized water.

[0021] Implementation results: After the above-mentioned process, P-type silicon wafers can obtain chromium nanotubes and magnesium nanotubes respectively.

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Abstract

The invention relates to a method for preparing silicon-based metal nanotubes, in particular to a method for growing controllable metal nanotubes including copper, zinc, titanium, cobalt, chromium or magnesium on a silicon substrate. Using semiconductor silicon wafers as raw materials, through electrochemical corrosion and metal deposition, nanotubes of metals including copper, zinc, titanium, cobalt, chromium or magnesium are prepared. This method adopts no mask and no electrodes, and the prepared metal nanotubes are more uniform, with controllable tube diameter, strong luminescence performance and high stability, and have greater development space in the field of microelectronics and optoelectronic devices. .

Description

1. Technical field [0001] The invention relates to a method for preparing silicon-based metal nanotubes, in particular to a method for growing controllable metal (copper, zinc, titanium, cobalt, chromium, magnesium, etc.) nanotubes on a silicon substrate. 2. Background technology [0002] As we all know, nanomaterials are widely used, and the demand is increasing year by year, which has become an important business in the chemical industry. Due to a series of unique properties, metal nanotubes have broad application prospects in catalysis, fuel cells, sensors, microelectronics and other fields, so they have received more and more attention. [0003] There are mainly two known methods for preparing metal nanotubes, one is the electrochemical deposition of nanoporous polymers or anodized aluminum templates, and the other is the reduction of surfactant templates. [0004] Patent document 03127069.7 discloses a method for preparing metal nanotubes using nanoporous polymers. Thi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00C25D5/00
Inventor 马文会王华杨斌徐宝强刘大春戴永年马婷婷魏奎先伍继君熊恒梅向阳秦博杨亚娣汪镜福
Owner KUNMING UNIV OF SCI & TECH
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