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Production method for film generating in-plane uniaxial magnetic anisotropy in non-inducement magnetic field

A magnetic anisotropy, non-induction technology, applied in the direction of magnetic layer, ion implantation plating, coating, etc., can solve the problems such as difficulty in obtaining magnetic anisotropy field, optimization obstacles and limitations of soft magnetic thin film process conditions, etc. Achieve the effects of excellent soft magnetic properties, easy operation in the production process, and simple equipment

Inactive Publication Date: 2009-05-13
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For some high-frequency thin-film microdevices that must be prepared under high-temperature process conditions, due to the limitation of the Curie temperature of the magnet, the preparation method is limited in the application of these high-frequency devices
Moreover, since the magnetic field applied on the surface of the substrate is constant, the in-plane uniaxial anisotropy field induced by the soft magnetic film with a certain thickness is also constant, which will not be easy to obtain the optimal magnetic anisotropy. The anisotropic field also brings technical obstacles to the optimization of soft magnetic thin film process conditions

Method used

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  • Production method for film generating in-plane uniaxial magnetic anisotropy in non-inducement magnetic field
  • Production method for film generating in-plane uniaxial magnetic anisotropy in non-inducement magnetic field
  • Production method for film generating in-plane uniaxial magnetic anisotropy in non-inducement magnetic field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: Preparation of a Fe-Co-Cr-N nanocrystalline soft magnetic film with a thickness of 50 nm at room temperature

[0023] 1) Clean the glass substrate ultrasonically with alcohol, acetone, and distilled water, then soak it in chromic acid for 12 hours, then wash it with distilled water, and finally blow it dry with a nitrogen gun and put it in an oven for drying. Monocrystalline silicon wafers use NH 3 ·H 2 O and H 2 o 2 Prepared alkaline aqueous solution, HCl and H 2 o 2 The prepared acidic aqueous solution was ultrasonically cleaned, then rinsed with HF acid for 15 seconds, then washed with distilled water, and finally dried with a nitrogen gun and placed in an oven for drying. The cleaned glass and single crystal substrate were loaded into the sputtering chamber. Install iron-cobalt alloy target and chromium target at the same time.

[0024] 2) The sputtering chamber is pumped until the background vacuum is higher than 5×10 -4 Pa;

[0025] 3) Passing A...

Embodiment 2

[0026] Example 2: Preparation of a Fe-Co-Cr-N nanocrystalline soft magnetic film with a thickness of 150 nm at room temperature

[0027] The same steps as in Example 1 were adopted. The sputtering deposition time is 10min. Different film thicknesses have obvious effects on the microstructure of the film, and the grain size and surface roughness also change accordingly.

Embodiment 3

[0028] Example 3: Preparation of a Fe-Co-Cr-N nanocrystalline soft magnetic film with a thickness of 300 nm at room temperature

[0029] The same steps as in Example 1 were adopted. The sputtering deposition time is 20min. Different film thicknesses have obvious effects on the microstructure of the film, and the grain size and roughness also change accordingly.

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Abstract

The invention provides a preparation method for an in-plane uniaxial magnetic anisotropic film generated in a non-induction magnetic field, and relates to a soft-magnetic film material. The invention provides the preparation method for the in-plane uniaxial magnetic anisotropic film generated in the non-induction magnetic field. The soft-magnetic film material comprises the following components according to the atomic percentage: 92 to 98 percent of magnetic alloy or magnetic metal and 2 to 8 percent of non-magnetic metal. The preparation method comprises the following steps: assembling a substrate into a sputtering chamber, and installing an iron target and a non-magnetic metal target, or a ferrocobalt target and a non-magnetic metal target; starting a vacuum system for air extraction till the background vacuity of the sputtering chamber is above 5x10<-4>Pa; heating up the substrate to reach a preset temperature of the substrate; and introducing reaction gas into the sputtering chamber to make the target surface build up luminance, carrying out presputtering firstly, then starting a substrate rotating button when the luminance is stable, opening a substrate baffle, and finally carrying out sputtering deposition to obtain the in-plane uniaxial magnetic anisotropic film generated in the non-induction magnetic field.

Description

technical field [0001] The invention relates to a soft magnetic thin film material, in particular to a nanocrystalline or amorphous soft magnetic thin film which can be used in high-frequency electromagnetic devices and a preparation method thereof. Background technique [0002] With the rapid development of information technology and the increasing demand for electronic products, further requirements are put forward for the miniaturization, high frequency and integration of magnetic devices. The application scope of these high-frequency magnetic devices involves recording heads, soft magnetic underlayers in perpendicular magnetic recording media, micro-inductors, micro-transformers, electromagnetic noise eliminators, and high-frequency magnetic sensors. The soft magnetic film used as the core material in the above-mentioned magnetic devices should not only have a small coercive force, but also have a high saturation magnetization and an appropriate in-plane uniaxial magneti...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/18C23C14/02C23C14/54H01F10/12
Inventor 彭栋梁王伟岳光辉陈远志
Owner XIAMEN UNIV
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