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Yttrium oxide thin film and preparation thereof

An yttrium oxide and thin film technology, applied in the field of yttrium oxide thin film and its preparation, can solve problems such as incompatibility, and achieve the effects of less environmental pollution, uniform film formation, and easy availability of raw materials

Inactive Publication Date: 2011-05-04
ZHEJIANG SCI-TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the intensification of market competition, simply using yttrium oxide raw materials or primary processed products cannot meet the needs of market development.

Method used

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  • Yttrium oxide thin film and preparation thereof
  • Yttrium oxide thin film and preparation thereof
  • Yttrium oxide thin film and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Yttrium oxide film and its synthesis, dissolving 0.3830g of yttrium nitrate hexahydrate in 100mL of deionized water, stirring to make a molar concentration of 0.01mol L -1 yttrium salt solution. Take 10 mL of the above-mentioned yttrium salt solution, and control the solution temperature at 40° C. by means of a constant temperature water bath. Yttrium oxide thin films were deposited using a three-electrode electrochemical cell. The working electrode is a single crystal silicon wafer. The counter electrode is a high-purity platinum electrode. The reference electrode is Ag / AgCl / saturated KCl solution electrode. Insert the three electrodes into the yttrium salt solution and keep the temperature constant for 30 minutes. The voltage range was adjusted between -0.85V (vsAg / AgCl / KCl reference electrode), and the deposition time was controlled within 1 hour. The deposited films were washed with deionized water and dried. Subsequently, the film was annealed and sintered at...

Embodiment 2

[0027] Yttrium oxide thin film and its synthesis, 15.1678g yttrium chloride hexahydrate was dissolved in 100mL deionized water, stirred, and the molar concentration was 0.5mol L -1 yttrium salt solution; take 10mL of the above yttrium salt solution, and control the solution temperature at 80°C by a constant temperature water bath. Yttrium oxide thin films were deposited using a three-electrode electrochemical cell. The working electrode is a single crystal silicon wafer. The counter electrode is a high-purity platinum electrode. The reference electrode is Ag / AgCl / saturated KCl solution electrode. Insert the three electrodes into the europium salt solution and keep the temperature constant for 30 minutes. Adjust the voltage between -1.4V (vs Ag / AgCl / KCl reference electrode), and control the deposition time at 20 minutes. The deposited films were washed with deionized water and dried. Subsequently, the film was annealed and sintered at 1000 °C for 30 min. Figure 4 It is t...

Embodiment 3

[0029] Yttrium oxide film and its synthesis, 3.8300g of yttrium nitrate hexahydrate was dissolved in 100mL of deionized water, stirred, and the molar concentration was 0.1mol L -1 yttrium salt solution. Take 10 mL of the above-mentioned yttrium salt solution, and control the solution temperature at 40° C. by means of a constant temperature water bath. Yttrium oxide thin films were deposited using a three-electrode electrochemical cell. The working electrode is a single crystal silicon wafer. The counter electrode is a high-purity platinum electrode. The reference electrode is Ag / AgCl / saturated KCl solution electrode. Insert the three electrodes into the yttrium salt solution and keep the temperature constant for 30 minutes. The voltage range was adjusted between -1.15V (vsAg / AgCl / KCl reference electrode), and the deposition time was controlled at 40 minutes. The deposited films were washed with deionized water and dried. Subsequently, the film was annealed and sintered a...

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Abstract

The invention discloses an yttrium oxide film and a preparation method thereof. A layer of the yttrium oxide film deposits on a side face of a monocrystalline silicon substrate. The method comprises the following steps: selecting soluble yttrium salt solution as a raw material, and depositing a film on a monocrystalline silicon slice in a three-electrode electrochemical cell; inserting three electrodes into the yttrium salt solution, keeping the temperature at 40 DEG C-80 DEG C for 30 minutes; adjusting a voltage to range from minus 0.85V to minus1.4V (vs an Ag / AgCl / KCl reference electrode), and controlling deposition time between 20-60min; cleaning and drying the obtained film, and then annealing and sintering the film at the temperature of 600 DEG C-1000 DEG C for 30-240min. The prepared luminescent film is uniform and compact and has no crack. The yttrium oxide film and the preparation method have the advantages of simple process, available raw materials, low cost, low energy consumption, innocuity and uniform and compact film forming without crack.

Description

technical field [0001] The invention relates to an yttrium oxide thin film and a preparation method thereof. Background technique [0002] Yttrium oxide has excellent heat resistance, corrosion resistance and high temperature stability, good stability to reducing media, high dielectric constant (12-14), and is widely used in phosphors, optical glass, oxygen sensors, ceramics and high-temperature superconducting materials, etc. Has a wide range of applications. It can be used to manufacture magnetic materials for microwaves and important materials for military industry, as well as optical glass, ceramic material additives, high-brightness phosphor powder for large-screen TVs and other picture tube coatings. It is also used in the manufacture of film capacitors and special refractory materials, as well as magnetic bubble materials for high-pressure mercury lamps, lasers, storage components, etc. With the development of science and technology, the application of yttrium oxide...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B41/50
Inventor 金达莱俞晓晶贾红缪洒丽张亚萍王龙成王耐艳
Owner ZHEJIANG SCI-TECH UNIV
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