Method for preparing ultra-lubricating compound carbon film material

A thin film material, composite carbon technology, applied in metal material coating process, superimposed layer plating, ion implantation plating and other directions, can solve the problems of rapid film peeling failure, high hardness, poor bonding strength, etc. Stability, high energy density, effect of increasing reactivity

Inactive Publication Date: 2010-03-10
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

②High hardness
[0003] But at the same time, the bonding strength between the carbon film material and the substrate is poor (especially for the metal substrate), which not only limits the thickness of the film, but also causes peeling and rapid failure of the film during friction

Method used

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  • Method for preparing ultra-lubricating compound carbon film material

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A. Sample pretreatment: The stainless steel substrate polished to the mirror surface was ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 3.0Pa. Turn on the pulse bias power supply, adjust the voltage value to -200V, and the duty cycle to 80%, and carry out argon plasma bombardment cleaning for 10 minutes.

[0022] B. Deposit silicon transition layer: adjust the flow rate of argon gas to maintain the chamber pressure at 2.5×10 -1 Pa, turn on the intermediate frequency sputtering power supply and the pulse bias power supply, adjust the sputtering current to 20A, the pulse bias voltage to -1000V, and the pulse duty cycle to 20%, and turn it off after the thickness of the transition layer reaches 500nm.

[0023] C. Deposit carbon layer: feed high-purity ar...

Embodiment 2

[0025] A. Sample pretreatment: The polished cemented carbide substrate was ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 15 minutes, and then dried with nitrogen gas and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity nitrogen until the pressure is 0.5Pa. Turn on the pulse bias power supply, adjust the voltage value to -1200V, and make the duty cycle 20%, and carry out argon plasma bombardment cleaning for 20 minutes.

[0026] B. Deposit silicon transition layer: adjust the flow rate of argon gas to maintain the chamber pressure at 1.0Pa, turn on the intermediate frequency sputtering power supply and pulse bias power supply, adjust the sputtering current to 3A, the pulse bias voltage to -100V, and the pulse duty cycle 50%, and turn off when the thickness of the transition layer reaches 50nm.

[0027] C. Deposit carbon layer: feed high-purity argon and methane mixed gas to mai...

Embodiment 3

[0029] A. Sample pretreatment: The steel ball substrate polished to the mirror surface was ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 30 minutes, and then dried with nitrogen gas and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 1.0Pa. Turn on the pulse bias power supply, adjust the voltage value to -1000V, and the duty cycle to 60%, and perform argon plasma bombardment cleaning for 30 minutes.

[0030] B. Deposit silicon transition layer: adjust the flow rate of argon to maintain the chamber pressure at 5.5×10 -1 Pa, turn on the intermediate frequency sputtering power supply and the pulse bias power supply, adjust the sputtering current to 8A, the pulse bias voltage to -400V, and the pulse duty cycle to 80%, and turn it off after the thickness of the transition layer reaches 300nm.

[0031] C. Depositing carbon layer: Inject a mixed gas of hi...

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Abstract

The invention discloses a method for preparing an ultra-lubricating compound carbon film material on base metal. The method is characterized in that: a silicon transition layer is formed on a metallicsubstrate by the unbalanced magnetic control sputtering method, and the hydrogen containing carbon film material is prepared by a pulse biasing voltage assistant radio frequency inductively coupled plasma chemical vapor deposition method. The film material can be firmly bonded to the metallic substrate and shows extremely excellent tribological property with a frictional coefficient of 0.03 to 0.05 and a wear rate of 1.73 to 2.6*10<-7>mm<3>/Nm in the atmospheric environment and a frictional coefficient of 0.004 to 0.007 and a wear rate of 3.8 to 8.9*10<-9>mm<3>/Nm in an atmosphere of inert gas such as N2 and the like. Therefore, the problem of the poor bonding force between the carbon film material and the metallic substrate is solved, and the carbon film material of the invention has a wide application prospect in various fields such as high tech precision machinery, electric information technology and the like.

Description

technical field [0001] The invention relates to a method for preparing a super-lubricating composite carbon film material on a metal substrate. Background technique [0002] The research on solid superlubrication is a high-tech research that has risen rapidly in recent years. It refers to the use of solid lubrication or self-lubricating surface engineering technology in the absence of liquid lubricants to make the solid friction pairs have 10 -3 The new lubrication technology with the following friction coefficient and excellent wear performance. Such a coefficient of friction can meet the requirements of equipment in the high-tech field for high precision, high reliability and high transmission efficiency. In particular, the carbon film materials (diamond film, diamond-like carbon film, carbon nitrogen film, etc.) prepared by various physical vapor deposition and chemical vapor deposition techniques have aroused great interest of tribology researchers. Compared with the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C28/04C23C14/34C23C16/513
Inventor 陈建敏吉利李红轩周惠娣赵飞权伟龙
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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