Preparation method of CuInS2 nanometer crystal semiconductor film
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- BEIJING UNIV OF CHEM TECH
- Publication Date
- 2010-06-23
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Abstract
Description
technical field
[0001] The invention belongs to the field of energy materials, in particular to CuInS used as a light absorption layer material for solar cells 2 A method for preparing a nanocrystalline semiconductor thin film. Background technique
[0002] At present, the serious situation of shortage of conventional fossil fuels and deterioration of the ecological environment has made mankind realize that it is necessary to gradually change the energy consumption structure in the future and vigorously develop clean and renewable energy represented by solar energy. As one of the ideal photovoltaic devices that can effectively utilize solar energy resources, compound thin-film solar cells have the advantages of less consumables, low cost, rich material selection, strong designability, and high theoretical photoelectric conversion efficiency compared with commercialized bulk silicon-based solar cells. Therefore, it is favored by the majority of scientific and technological w...