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Nano crystal Cr2N/amorphous WC superhard film with superlattice structure and preparation method thereof

A superlattice and nanocrystalline technology, applied in the field of Cr2N/WC superlattice film, can solve problems such as the difficulty of superhard Cr-N film, achieve the effect of improving high temperature performance, improving stress distribution, and expanding the application range

Inactive Publication Date: 2012-05-30
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Overall, although there are many literatures on chromium nitride-based films, it is still difficult to prepare superhard Cr-N films while further improving high-temperature performance. Chromium engineering application range

Method used

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  • Nano crystal Cr2N/amorphous WC superhard film with superlattice structure and preparation method thereof
  • Nano crystal Cr2N/amorphous WC superhard film with superlattice structure and preparation method thereof
  • Nano crystal Cr2N/amorphous WC superhard film with superlattice structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1: as figure 1 with figure 2 As shown, a pair of intermediate frequency DC magnetron sputtering sources 7 are adjacently installed on one side of the vacuum chamber and in front of the intermediate frequency DC magnetron device 1, and two arc sources 8 are installed on the opposite side, and are located on the respective arc Generator 2, N 2 Bottle 3 and Ar bottle 4 can be adjusted to pass into the vacuum chamber 5; choose Si (001) as the base material (workpiece 001), and the size is 1×30×40mm 3 , after polishing, ultrasonically clean with acetone and alcohol for 10 minutes each, and install on the workpiece turret 6 in the vacuum chamber 5 after drying. The vacuum degree of the vacuum chamber 5 is 3.5×10 -3 Pa, the heating temperature of workpiece 001 is 320°C, and the workpiece 001 rotates 10 rpm; the flow rate of Ar gas is 20SCCM, the bias voltage is 600V, and the surface of the workpiece is bombarded and cleaned with Ar ions for 10min; the bias volta...

Embodiment 2

[0035] Embodiment 2: choose Si (001) as base material (work piece 002), size is 1 * 30 * 40mm 3 , after polishing, ultrasonically clean with acetone and alcohol for 10 minutes each, and install on the workpiece turret 6 in the vacuum chamber 5 after drying. The vacuum degree of the vacuum chamber 5 is 3.5×10 -3 Pa, the heating temperature of the workpiece 001 is 320°C, and the workpiece 001 rotates 10 rpm; the flow rate of the Ar gas is 20SCCM, the bias voltage is 600V, and the surface of the workpiece is bombarded and cleaned with Ar ions for 10min; the bias voltage is reduced to 500V, The starting arc source and the intermediate frequency DC magnetron sputtering source were used to deposit Cr and WC multi-component amorphous transition layers, respectively, and worked for 10 minutes; filled with N 2 Gas flow is 40SCCM for depositing Cr 2 N and WC layers, work for 60 minutes; when the vacuum chamber 5 is cooled to room temperature, open the furnace door and take out the wor...

Embodiment 3

[0039] Embodiment 3: In order to detect the binding force between the film layer and the substrate under the same process conditions as in Example 1, choose die steel SKD11 as the substrate material (workpiece 003), with a size of 5 × 30 × 50mm 3 , after polishing, ultrasonically clean with acetone and alcohol for 10 minutes each, and install on the workpiece turret 6 in the vacuum chamber 5 after drying. The vacuum degree of the vacuum chamber 5 is 3.5×10 -3 Pa, the heating temperature of workpiece 001 is 320°C, and the workpiece 001 rotates 10 rpm; the flow rate of Ar gas is 20SCCM, the bias voltage is 600V, and the surface of the workpiece is bombarded and cleaned with Ar ions for 10min; the bias voltage is reduced to 400V, The starting arc source and the DC magnetron sputtering source were used to deposit Cr and WC multivariate amorphous transition layers respectively, and worked for 10 minutes; filled with N 2 Gas flow is 40SCCM for depositing Cr 2 N and WC layers, work...

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Abstract

The invention relates to a nano crystal Cr2N / amorphous WC superhard film with a superlattice structure and a preparation method thereof, belonging to the technical field of material surfaces. The superhard film is formed by alternately depositing an electric arc ion plated nano crystal phase Cr2N layer and a magnetron sputtering plated amorphous phase WC layer, and a modulating period of a superlattice ranges from 10nm to 20nm, and the thicknesses of a Cr2N monolayer and a WC monolayer are respectively 8-14nm and 2-6nm. The alternate distribution of the Cr2N layer and the WC layer realizes the component diversification and structure multi-stratification of a Cr-N base film and solves the problem that the Cr-N base film with stronger oxidation resistance is difficult to obtain superhigh hardness; and meanwhile, the amorphous WC layer further improves the oxidation resistance and the corrosion resistance of the Cr-N base film and meets the surface strengthening requirement on various products not capable of being carried out heat treatment.

Description

Technical field: [0001] The invention belongs to the technical field of material surface, and relates to a coating treatment on the surface of workpieces, in particular to a Cr alloy with high oxidation resistance and superhardness. 2 N / WC superlattice film. Background technique: [0002] Transition metal nitride films are widely used as surface modifications for cutting and forming tools due to their advantages in hardness and wear resistance. The film layer has the following characteristics: good bonding force, sufficient thickness, appropriate mechanical properties (strength and hardness), thermal disturbance resistance and high temperature stability. Compared with the TiN film which has been widely used, the chromium nitride film has the advantages of low internal stress, good toughness, thicker film layer, etc., and it also has fine grain structure, strong binding force and high chemical stability. And good stability below 700 ℃, more practical value. [0003] In rec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/22C23C14/32C23C14/35C23C14/06B32B9/00
Inventor 张世宏李明喜
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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