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Method for preparing AlN mono-crystal nanobelts and nano-branch structure

A single-crystal nano-branched structure technology, applied in chemical instruments and methods, single-crystal growth, single-crystal growth and other directions, to achieve uniform morphology, good crystallinity, and easy promotion.

Inactive Publication Date: 2010-10-06
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

AlN single crystal nanoribbons and nanobranched structures have not been reported using this method so far.

Method used

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  • Method for preparing AlN mono-crystal nanobelts and nano-branch structure
  • Method for preparing AlN mono-crystal nanobelts and nano-branch structure
  • Method for preparing AlN mono-crystal nanobelts and nano-branch structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 0.2 g of Al powder with a purity of 99.99% was put into a ceramic boat, and the polycrystalline Al that had been ultrasonically cleaned with alcohol and deionized water 2 o 3 The substrate is placed 5mm directly above the source as a substrate button, and the ceramic boat is placed in the central area of ​​the tube furnace. After sealing the container, start vacuuming. When the vacuum degree of the corundum tube system reaches 1×10 -2 The flow rate is 200cm in Pa 3 / min (sccm) of argon into the system. Next, the system was heated, and when the furnace temperature reached 1400° C., ammonia gas with a flow rate of 30 sccm was fed in for one hour. Finally, stop the heating system and turn off the ammonia gas when the temperature drops to 800 °C, and naturally cool to room temperature under the protective atmosphere of argon. After cooling, the substrate was taken out, and a white substance was collected on the surface of the substrate. Scanning electron microscope ana...

Embodiment 2

[0027] 0.2 g of Al powder with a purity of 99.99% was put into a ceramic boat, and the polycrystalline Al that had been ultrasonically cleaned with alcohol and deionized water 2 o 3 The substrate is placed 5mm directly above the source as a substrate button, and the ceramic boat is placed in the central area of ​​the tube furnace. When the system vacuum reaches 1×10 -2 The flow rate is 200cm in Pa 3 / min (sccm) of argon into the system. At the same time, the system was heated, and when the furnace temperature reached 1400° C., ammonia gas with a flow rate of 30 sccm was fed in for half an hour. Finally, stop the heating and turn off the ammonia gas when the temperature drops to 800 °C, and naturally cool to room temperature under the protective atmosphere of argon. After cooling, the substrate was taken out, and an off-white substance was collected on the surface of the substrate. Scanning electron microscope analysis shows that the morphology of the substrate area is a n...

Embodiment 3

[0029] 0.2 g of Al powder with a purity of 99.99% was put into a ceramic boat, and the polycrystalline Al that had been ultrasonically cleaned with alcohol and deionized water2 o 3 The substrate is placed 5mm directly above the source as a substrate button, and the ceramic boat is placed in the central area of ​​the tube furnace. After sealing the container, start vacuuming. When the vacuum degree of the corundum tube system reaches 1×10 -2 The flow rate is 200cm in Pa 3 / min (sccm) of argon into the system. Next, the system was heated, and when the furnace temperature reached 1400° C., ammonia gas with a flow rate of 30 sccm was introduced and kept for two hours. Finally, stop the heating system and turn off the ammonia gas when the temperature drops to 800 °C, and naturally cool to room temperature under the protective atmosphere of argon. After cooling, the substrate was taken out, and a white substance was collected on the surface of the substrate. The results showed t...

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Abstract

The invention discloses a method for growing AlN mono-crystal nanobelts and a nano-branch structure of III-V group semiconductor compounds by using a catalyst-free enhanced chemical vapor deposition method. The method is implemented by the following processes of: putting 0.2 grams of Al powder with a purity of 99.99 percent into a ceramic boat; converting a polycrystal Al2O3 substrate which is ultrasonically washed with alcohol and deionized water and serves as a substrate 5 mm directly above a source; placing the ceramic boat in a central region of a tubular furnace; starting to vacuumize after a container is sealed; introducing argon at a flow rate of 200 cm<3> / min (sccm) into a system when the vacuum degree of an alundum tube system is up to 1*10<-2> Pa; heating the system; introducingammonia gas at the flow rate of 30 sccm when a furnace temperature is up to 1,400 DEG C; keeping the temperature for 1 hour; stopping heating the system and turning off the ammonia gas when the temperature is reduced to 800 DEG C; and naturally cooling to room temperature in a protective atmosphere of the argon. The nanobelts and the nano-branch structure prepared by the method are of AlN in a monocrystal state. The AlN nanobelts and the nano-branch structure obtained by the method have the characteristics of uniform appearance and large deposition area. The method has the characteristics of no use of any catalyst, simple method and easy popularization.

Description

technical field [0001] The invention belongs to the field of nanostructure growth, and for the first time uses a chemical vapor deposition method to grow AlN single crystal nanobelts and nano branch structures without catalyst assistance. Background technique [0002] Aluminum nitride is an important III-V semiconductor material with high thermal conductivity, high resistivity, high piezoelectric coefficient, low dielectric loss, high temperature chemical stability, and its thermal expansion coefficient is similar to that of silicon, which is the preferred high temperature Structural materials. AlN also has high bond energy (2.28ev), straight bandgap and wide bandgap (6.28ev), low electron affinity (<0.6ev), and light transmittance in the range of blue and violet light. Field emission also has broad application prospects. In addition, AlN has a similar lattice structure to GaN and a lattice mismatch of less than 1%, making the growth of AlN heterojunctions on GaN substr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B29/40
Inventor 简基康李海兵吴荣孙言飞李锦
Owner XINJIANG UNIVERSITY
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