Si-base reversed extension 3C-SiC monocrystal film and preparation method thereof

A technology of single crystal thin film and deposition method, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the constraints of 3C-SiC single crystal thin film growth, large lattice mismatch coefficient, large thermal expansion coefficient, etc. problems, to achieve the effect of avoiding difficulties, high electron Hall mobility, and simple equipment

Inactive Publication Date: 2011-01-12
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the direct epitaxial 3C-SiC single crystal film on the silicon substrate mainly has the following problems: (1) has a large lattice mismatch coefficient (up to 20%), (2) has a large thermal expansion coefficient mism

Method used

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  • Si-base reversed extension 3C-SiC monocrystal film and preparation method thereof
  • Si-base reversed extension 3C-SiC monocrystal film and preparation method thereof
  • Si-base reversed extension 3C-SiC monocrystal film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Use 10 15 cm -3 3C-SiC Single Crystal Thin Films Prepared on n-Si(111) Substrates

[0040] (1) Cleaning and drying of silicon substrate

[0041] First, the silicon wafers are ultrasonically cleaned in toluene, acetone and alcohol solutions in order to remove the organic matter on the surface. Boil in a mixed solution of ammonia water and a mixed solution of deionized water, hydrogen peroxide and hydrochloric acid to remove acidic oxides and basic oxides on the surface of silicon wafers, then use a mixed solution of hydrofluoric acid and deionized water to clean the surface oxides, and finally use a large amount of The silicon wafer was rinsed with deionized water and dried, which was used as a substrate for the growth of 3C-SiC single crystal thin film.

[0042] (2) Process conditions for reverse epitaxial growth

[0043] 3C-SiC single crystal thin film is grown by LPCVD method, hydrogen gas flow is 50-200 sccm, methane gas flow is not more than 5 sccm, pressure is ...

Embodiment 2

[0048] Use 10 15 cm -3 After boron diffusion on the n-Si(111) substrate, 8×10 19 cm -3 The p-Si(111) substrate is used to prepare 3C-SiC single crystal thin film

[0049] Preparation of 3C-SiC single crystal thin films by changing the conductivity type and impurity concentration of the substrate

[0050] (1) Cleaning and drying of silicon substrate

[0051] First, the silicon wafers are ultrasonically cleaned in toluene, acetone and alcohol solutions in order to remove the organic matter on the surface. Boil in a mixed solution of ammonia water and a mixed solution of deionized water, hydrogen peroxide and hydrochloric acid to remove acidic oxides and basic oxides on the surface of silicon wafers, then use a mixed solution of hydrofluoric acid and deionized water to clean the surface oxides, and finally use a large amount of The silicon wafer was rinsed with deionized water and dried, which was used as a substrate for the growth of 3C-SiC single crystal thin film.

[005...

Embodiment 3

[0060] Use 10 15 cm -3 3C-SiC Single Crystal Thin Films Prepared on n-Si(111) Substrates

[0061] (1) Cleaning and drying of silicon substrate

[0062] Firstly, the silicon wafer is ultrasonically cleaned in toluene, acetone and alcohol solution to remove the organic matter on the surface, then the silicon wafer is heated in concentrated sulfuric acid to remove the metal impurities on the surface, and then the silicon wafer is sequentially washed in deionized water, hydrogen peroxide, ammonia water, Boil in a mixed solution of ionized water, hydrogen peroxide, and hydrochloric acid to remove acidic and basic oxides on the surface of silicon wafers, then use a mixed solution of hydrofluoric acid and deionized water to remove surface oxides, and rinse with a large amount of deionized water The silicon wafer is dried and used as the substrate for growing 3C-SiC single crystal thin film.

[0063] (2) Process conditions for reverse epitaxial growth

[0064] LPCVD method to grow...

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Abstract

The invention relates to a cubic silicon carbide (3C-SiC) monocrystal film with reversed extension growth on a Si base and a preparation method thereof, belonging to the preparation field of novel Si-base wide band-gap semiconductors, wherein the cubic silicon carbide (3C-SiC) monocrystal film with reversed extension growth on the Si base is formed by diffusing carbon on the Si base to Si and reacting with the Si. The method adopts low-temperature chemical vapor deposition (LPCVD for short), comprising the following steps of: diffusing the carbon to the Si by utilizing methane decomposition at high temperature to effectively displace the Si, and forming the 3C-SiC monocrystal film with the stoichiometric ratio of 1:1 by using a reversed extension growth mechanism, wherein the thickness of the 3C-SiC monocrystal film can reach the micrometer level, the electronic Hall mobility at the room temperature reaches 1.22*10<3> cm<2>/(V.S), and the electronic Hall mobility in liquid nitrogen reaches 2.06*10<3> cm<2>/(V.S). The impurity concentration and the condition type of the 3C-SiC monocrystal film prepared in the method can be controlled through the impurity concentration and the condition type of a monocrystal silicon substrate, and the impurity concentration in the film is uniform. The preparation method can be used for obtaining the Si-base reversed extension 3C-SiC monocrystal film with low stress and high quality.

Description

technical field [0001] The invention relates to a "reverse epitaxial" 3C-SiC single crystal thin film on a Si base by LPCVD method and a preparation method thereof, which belongs to the production technology of a new Si base semiconductor material. Background technique [0002] Since 1824, the Swedes Since Jacob Berzelius accidentally discovered SiC, a new compound, in the process of trying to prepare diamond, SiC has attracted great interest as a semiconductor material. In 1955, Lely used the sublimation method to prepare SiC single crystal, which opened the prelude to the development of SiC semiconductor materials. S. Nishino used chemical vapor deposition (CVD) technology to prepare a 3C-SiC single crystal film on a cheap Si substrate, and many people worked hard to set off a SiC research boom. At present, the methods for preparing 3C-SiC single crystal thin films mainly include liquid phase epitaxy, ion implantation, molecular beam epitaxy, chemical vapor deposition (...

Claims

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Application Information

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IPC IPC(8): C30B25/02C30B29/36C23C16/32
Inventor 杨治美龚敏孙小松
Owner SICHUAN UNIV
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