Non-refrigerating infrared focal plane array as well as preparation method and application thereof

A focal plane array and uncooled infrared technology, which is applied in the field of infrared and thermal sensing, can solve the problems of poor system shock resistance, difficulty in machine integration, and bulky optical readout system

Inactive Publication Date: 2011-03-30
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its optical readout system is bulky, the system is poor in

Method used

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  • Non-refrigerating infrared focal plane array as well as preparation method and application thereof
  • Non-refrigerating infrared focal plane array as well as preparation method and application thereof
  • Non-refrigerating infrared focal plane array as well as preparation method and application thereof

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Experimental program
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Embodiment 1

[0067] Figure 7 The flow chart for the preparation of a MOSFET readout micro-cantilever infrared focal plane array, the specific steps are as follows:

[0068] 1) Adopt SOI silicon wafer 1 as processing substrate, device layer 2 is P-type, device layer 2 thickness is 200nm, (100) crystal orientation, buried oxide layer 3 thickness is 400nm ( Figure 7 a); first, 30nm silicon device layer is oxidized to provide a stress buffer layer for the subsequent process; a layer of SiNx is LPCVD on the surface of the SOI silicon wafer, with a thickness of 100nm, and the first photolithography is performed, and the SiNx is dry etched, and the photolithography is removed Glue to form the active region 4 of the MOSFET device;

[0069] 2) Oxidize the Si device layer to form silicon islands 4 in the active area electrically insulated from each other; carry out the second photolithography, implant boron ions in the active area, the implantation voltage is 40keV, and the dose is 2×10 12 / cm ...

Embodiment 2

[0078] Follow the steps below to prepare a MOSFET readout uncooled infrared focal plane array:

[0079] 1) Using SOI silicon wafer 1 as the processing substrate, the device layer 2 is N-type, the thickness of the device layer 2 is 400nm, (100) crystal orientation, and the thickness of the buried oxide layer 3 is 1 μm ( Figure 7 a); first carry out 50nm silicon device layer oxidation; LPCVD a layer of SiNx on the surface of the SOI silicon wafer with a thickness of 100nm, perform photolithography for the first time, dry etch SiNx, and remove the photoresist;

[0080] 2) Oxidize the Si device layer to form silicon islands 4 in the active area electrically insulated from each other; carry out the second photolithography, implant boron ions in the active area, the implantation voltage is 40keV, and the dose is 1×10 11 / cm 2 , form the P-region 5, remove the photoresist; carry out the third photolithography, inject phosphorus, the implantation voltage is 60kev, and the implantati...

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Abstract

The invention discloses a non-refrigerating infrared focal plane array as well as a preparation method and application thereof. The non-refrigerating infrared focal plane array is composed of a micro-cantilever pixel array, a substrate for supporting the micro-cantilever pixel array and a circuit arranged on the substrate, wherein the micro-cantilever pixel array consists of an infrared adsorption face, cantilever landing legs, a metal-oxide semiconductor field effect transistor (MOSFET) device, an output lead and support anchor points. The non-refrigerating infrared focal plane array does not have any special process, is easy to realize monolithic integration with an integrated circuit (IC) and is suitable for industrial manufacture in bulk, the products with different precision requirements are easy to obtain, huge promoting space is provided for high resolution, circuit scale is significantly simplified, and design cost is significantly lowered, therefore a feasible design scheme is provided for large-scale industrialization.

Description

technical field [0001] The invention belongs to the technical field of infrared and thermal sensing, and relates to an uncooled infrared focal plane array and its preparation method and application. Background technique [0002] Infrared detectors convert infrared light radiation into directly measured electrical quantities or other easily measurable output forms, so as to achieve the purpose of infrared detection. Infrared detectors are widely used in military, environmental detection, medical diagnosis and thermal detection of microelectronic devices. Infrared detectors can be divided into thermal detectors and photon detectors according to their working principles. Since most photon detectors require expensive and cumbersome refrigeration equipment, people are gradually turning their attention to uncooled thermal infrared detectors. In terms of uncooled thermal infrared detectors, relatively mature technologies include: microbolometric detectors, pyroelectric detectors, ...

Claims

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Application Information

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IPC IPC(8): G01J5/00G01J5/20B81B7/02B81C1/00
Inventor 于晓梅李博翰
Owner PEKING UNIV
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