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Method for preparing uniform-diameter zinc oxide nanorods on LB (Langmuir-Blodgett) zinc oxide seed film

A zinc oxide nanorod, seed film technology, applied in zinc oxide/zinc hydroxide, chemical instruments and methods, single crystal growth and other directions, can solve the problem of zinc oxide nanorod shape, size instability, zinc oxide film structure is not easy to artificial Control, complex operation and other problems, to achieve the effect of easy operation, stable size and high purity

Inactive Publication Date: 2011-06-01
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the problem that the existing method of using zinc oxide film as a substrate to prepare zinc oxide nanorods with uniform diameter has high energy consumption and complicated operation, the structure of zinc oxide film is not easy to be controlled artificially, and the shape and size of the prepared zinc oxide nanorods are unstable. problem, providing a method for preparing ZnO nanorods with uniform diameter on LB ZnO seed film

Method used

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  • Method for preparing uniform-diameter zinc oxide nanorods on LB (Langmuir-Blodgett) zinc oxide seed film
  • Method for preparing uniform-diameter zinc oxide nanorods on LB (Langmuir-Blodgett) zinc oxide seed film
  • Method for preparing uniform-diameter zinc oxide nanorods on LB (Langmuir-Blodgett) zinc oxide seed film

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specific Embodiment approach 1

[0013] Specific embodiment one: present embodiment prepares the method for the zinc oxide nanorod of uniform diameter on LB zinc oxide seed film, carries out according to the following steps: 1, the processing of quartz substrate: immerse quartz substrate in ethanol completely, with 40KHz Ultrasonic treatment for 10 to 15 minutes, then completely immerse the quartz substrate in acetone, use 40KHz ultrasonic treatment for 10 to 15 minutes, then wash the quartz substrate with ultrapure water for 3 to 5 times, and then completely immerse the quartz substrate in alkaline hydrogen peroxide In the solution, use 40KHz ultrasonic treatment for 10-20min, then completely immerse the quartz substrate in the acidic hydrogen peroxide solution, use 40KHz ultrasonic treatment for 10-20min, then wash the quartz substrate with ultrapure water for 3-5 times, and dry it to obtain Treated quartz substrate; 2. Preparation of spreading solution: Mix stearic acid and chloroform and stir with a magnet...

specific Embodiment approach 2

[0015] Embodiment 2: This embodiment differs from Embodiment 1 in that: In step 1, the quartz substrate is completely immersed in ethanol, and treated with 40KHz ultrasonic waves for 12-14 minutes. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0016] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that in step 1, the quartz substrate is completely immersed in acetone, and treated with 40KHz ultrasonic waves for 12-14 minutes. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a method for preparing zinc oxide nanorods, in particular to a method for preparing uniform-diameter zinc oxide nanorods on an LB (Langmuir-Blodgett) zinc oxide seed film. The invention aims to solve the problems of high energy consumption and complex operation in the existing method for preparing uniform-diameter zinc oxide nanorods by using a zinc oxide film as the substrate, the problem that the zinc oxide film structure can not be easily controlled by manpower, and the problem of unstable shape and dimensions of the prepared zinc oxide nanorods. The method comprises the following steps: 1. treating a quartz substrate; 2. preparing a spreading liquid; 3. preparing a zinc acetate solution; 4. preparing a zinc oxide seed film; 5. preparing a growth liquid; and 6. preparing zinc oxide nanorods. The zinc oxide nanorods prepared by the method provided by the invention have the advantages of high purity, no impure phase and uniform diameter (140-180nm). The invention is applicable to the field of nano materials.

Description

technical field [0001] The invention relates to a preparation method of zinc oxide nanorods. Background technique [0002] ZnO is an important wide-bandgap semiconductor material with a bandgap of 3.37eV at room temperature and an exciton binding energy as high as 60meV. Because of its cheap, non-toxic, high chemical stability and thermal stability, etc., it has been a research hotspot in domestic and foreign academic circles. ZnO nanorods have unique optical, electrical and acoustic properties, which make them have broad application prospects in solar cells, piezoelectric materials, biosensors and other fields. [0003] LB film technology is a film-forming technology that transfers the monomolecular film on the gas-liquid interface to the solid surface. This technology was established by American scientist Langmuir and his student Blodgett in the 1920s and 1930s, so it is called LB (Langmuir-Blodgett) membrane technology. LB film has the advantages of uniformity, ultra-t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B29/62C30B7/00C01G9/02
Inventor 唐冬雁韩帅崔巍巍郭玉娣林秀玲程言
Owner HARBIN INST OF TECH
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