Ultralow dielectric constant film with sandwich structure and preparation method thereof

An ultra-low dielectric constant, sandwich technology, applied in the field of ultra-low dielectric constant film and its preparation, can solve problems such as low dielectric constant, and achieve the effects of low dielectric constant, excellent heat resistance, and easy realization

Inactive Publication Date: 2011-09-21
TORAY FIBER RES INST(CHINA) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above problems, the present invention overcomes many problems of a single electrospun membrane by adjusting the material s

Method used

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  • Ultralow dielectric constant film with sandwich structure and preparation method thereof
  • Ultralow dielectric constant film with sandwich structure and preparation method thereof
  • Ultralow dielectric constant film with sandwich structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0035] b) The preparation method of mesoporous molecular sieve (MCM-41) is as follows:

[0036] Dissolve 120g of cetyltrimethylammonium bromide in 2L of deionized water, stir at room temperature for 30min to make it fully dissolved; add 2.5L of absolute ethanol and 680g of ammonia (25%), stir for 25min; then add 180ml of normal Ethyl silicate, stirring at room temperature for 6 hours; then static aging at room temperature for 1 hour. Suction filtration, washing to neutrality, and drying to obtain raw powder; the raw powder is placed in a muffle furnace, and calcined at 1°C / min to 580°C for 6 hours in an air atmosphere to obtain MCM-41.

[0037] c) Organic monomer: pyromellitic dianhydride (PMDA): Sinopharm Chemical Reagent Co., Ltd.; 3,3',4,4'-benzophenonetetracarboxylic dianhydride (BTDA): SIGMA-ALDRICH China Co., Ltd. ; 4,4'-Diaminodiphenyl ether (ODA): Sinopharm Chemical Reagent Co., Ltd.; p-phenylenediamine (p-PDA): Sinopharm Chemical Reagent Co., Ltd.;

[0038] d) Solvent: N,N...

Example Embodiment

[0043] Example 1

[0044] Synthesis of polyamic acid solution for dense layer preparation:

[0045] Under the protection of nitrogen, after dissolving 0.9649g ODA in 50ml NMP, slowly adding 1.5535g BTDA, and reacting at 20°C for 15 hours after the addition to obtain a polyamic acid solution with a solid content of 0.05g / ml.

[0046] Preparation of polyamic acid dense base film:

[0047] Drop the above 6ml polyamic acid solution on a horizontally placed glass plate and cast to form a film; remove the solvent at 60°C for more than 18 hours. Then immerse it in hot water and cook for 5-10 minutes, and scrape it off gently to get a dense polyamic acid film.

[0048] Synthesis of polyamic acid solution for electrospun membrane preparation:

[0049] Under the protection of nitrogen, after dissolving 3.9752g ODA in 58ml DMF, slowly adding 6.5248g BTDA, and reacting at 15°C for 20 hours after addition, to obtain a polyamic acid solution with a solid content of 0.18g / ml.

[0050] Preparation of el...

Example Embodiment

[0056] Example 2

[0057] Synthesis of polyamic acid / OAPS hybrid solution for dense layer preparation:

[0058] 1) Dissolve 0.0233g OAPS in 40ml DMSO;

[0059] 2) Under the protection of nitrogen, add 0.5516g ODA to the above dispersion; after the ODA is completely dissolved, slowly add 0.6129g PMDA, and react at 20°C for 18 hours after the addition to obtain a solid content of 0.03g / ml and an OAPS content of 2. % Homogeneous polyamic acid / OAPS hybrid solution.

[0060] Preparation of polyamic acid / OAPS hybrid dense base film:

[0061] Drop the above 6ml polyamic acid / OAPS hybrid solution on a horizontally placed glass plate and cast to form a film; remove the solvent at 60°C for more than 18 hours. Then immerse it in hot water and cook for 5-10 minutes, and gently scrape to obtain a dense polyamic acid / OAPS hybrid film.

[0062] Synthesis of polyamic acid / OAPS hybrid solution for electrospun membrane preparation:

[0063] 1) Dissolve 0.5250g OAPS in 79ml DMF;

[0064] 2) Under the prote...

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Abstract

The invention belongs to the field of polymer dielectric materials and discloses an ultralow dielectric constant film with a special sandwich structure and a preparation method thereof. The ultralow dielectric constant film with the sandwich structure comprises a three-layer structure, namely a compact layer 1, an electrospinning layer and a compact layer 2 sequentially. The invention also discloses the preparation method for the ultralow dielectric constant film with the sandwich structure, which comprises the following two key steps of: directly performing electrospinning on a compact bottom film; and performing pressurization heat treatment. Through the adjustment of a material structure, multiple problems of a single electrospinning film are solved, lower dielectric constants are kept, the ultralow dielectric constant film which is provided with upper and lower smooth and compact surfaces and has the sandwich structure can be obtained, the defects of a rough surface and an over-high water adsorption ratio of the conventional electrostatic spinning film are overcome, and the preparation method is similar to that of the conventional single electrospinning film and is easy to implement.

Description

technical field [0001] The invention belongs to the field of polymer dielectric materials, and in particular relates to an ultra-low dielectric constant film with a sandwich structure and a preparation method thereof. Background technique [0002] As an organic polymer material with excellent comprehensive properties, polyimide (PI) is widely used in the microelectronics industry for passivation and packaging materials on chip surfaces, interlayer insulation materials for multilayer wiring, and flexible printed circuits. The base material of the board, etc. However, as the size of VLSI gradually shrinks, the resistance and capacitance (Rc) delay of metal interconnection increases approximately quadratically, which leads to signal transmission delay and crosstalk, which directly affects the performance of the device. In order to reduce the increase in power consumption caused by signal transmission delay, crosstalk and dielectric loss, meet the high-speed signal transmission...

Claims

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Application Information

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IPC IPC(8): B32B27/06B32B27/34B32B27/20C08L79/08
Inventor 杨扬赵超越陈桥吴刚
Owner TORAY FIBER RES INST(CHINA) CO LTD
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