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B4C/SiC whisker/SiC multiphase ceramic matrix composite and preparation method thereof

A composite material and multiphase ceramic technology, applied in the field of ceramic matrix composite materials, can solve the problems of high sintering temperature, poor shock resistance, slow cooling, etc., and achieve the effects of low preparation temperature, improved comprehensive performance, and low infiltration reaction temperature

Inactive Publication Date: 2013-02-27
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, hot pressing sintering has the following problems: first, the sintering temperature is high, even if sintering additives are used, the sintering temperature must be around 2000 ° C; 4 C has poor shock resistance, so the temperature should be lowered slowly during the cooling process; the third is B obtained by hot pressing and sintering 4 C products are brittle; Fourth, hot pressing sintering can only produce products with simple shapes
[0008] The above-mentioned methods all disclose the method for preparing silicon carbide whiskers from rice husks, but for the application of prepared silicon carbide whisker-containing products, there are still relatively few relevant publications

Method used

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  • B4C/SiC whisker/SiC multiphase ceramic matrix composite and preparation method thereof
  • B4C/SiC whisker/SiC multiphase ceramic matrix composite and preparation method thereof
  • B4C/SiC whisker/SiC multiphase ceramic matrix composite and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0053] An appropriate amount of rice husk is placed in a graphite crucible and subjected to coking treatment at 900° C. for 2 hours under vacuum conditions. The coking treatment product was ground, then placed in a graphite crucible, and kept at 1500°C for 3 hours under vacuum conditions for silicon carbide whisker treatment to obtain a product rich in SiC whiskers and particles. Take 20 g of this product, 70 g of boron carbide powder with an average particle size of 7 μm and 10 g of molybdenum powder with an average particle size of 3 μm, and mix them by mechanical ball milling in absolute ethanol, and then place the ball milled slurry in an oven for drying. Add an appropriate amount of polyvinyl alcohol (PVA) binder with a concentration of 5 wt.% to the dried mixed powder, stir it, dry it and grind it for use. Take an appropriate amount of the powder and put it into a stainless steel mold with a length and a width of 50 mm, and mold it under the condition of 32 MPa, and then...

Embodiment 2

[0055] Take 40 g of the rice husk silicon carbide whisker product described in Example 1, 50 g of boron carbide powder with an average particle size of 3 μm, and 10 g of molybdenum powder with an average particle size of 3 μm and place them in a ball mill jar. Perform ball mill mechanical mixing in the middle, and then dry the mixed slurry. Then add a PVA binder with a concentration of 5 wt.% to the dried powder, and then dry it after stirring. Take 20 g of the dried powder and put it into a stainless steel mold with a length and width of 50 mm, and mold it under the condition of 96 MPa. The molded green body was pre-sintered at 1400°C for 2 hours under vacuum conditions to obtain a preform. The infiltration reaction is performed on the preform in a graphite sintering furnace. Place an appropriate amount of silicon block on the preform, heat it at 1460°C for 40 minutes under vacuum, and then cool it with the furnace to obtain a B of the size of the preform. 4 C / SiC whisker / ...

Embodiment 3

[0057] Put an appropriate amount of rice husk under vacuum conditions and heat it at 900°C for 2 hours for coking treatment, then grind the coked product and heat it at 1550°C for 6 hours under Ar gas atmosphere to carry out silicon carbide whisker treatment to obtain whiskers rich in SiC and particulate products. 60 g of SiC whisker products, 30 g of boron carbide powder with an average particle size of 7 μm, and 10 g of molybdenum powder with an average particle size of 3 μm were mixed by mechanical ball milling in absolute ethanol, and then the ball milled slurry was dried. Then add a PVA binder with a concentration of 5wt.% to the mixed powder, stir and then dry. An appropriate amount of the mixed powder was put into a stainless steel mold with a length and width of 50 mm, and molded under the condition of 96 MPa to obtain a pre-compact, and then the pre-compact was cold isostatically pressed under the condition of 180 MPa. The cold isostatic pressed body is pre-sintered ...

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Abstract

The invention belongs to the technical field of ceramic-based composite materials, and specifically relates to a preparation method of a ceramic-based composite material with SiC whiskers, SiC particles and B4C particles composited with various ceramic phases and its products. A B4C / SiC whisker / SiC multiphase ceramic matrix composite material, the composite material is prepared from a preform through Si or Si alloy infiltration reaction, and the preform is composed of at least one of SiC and carbon, SiC Whiskers and B4C powder raw materials are molded. The invention prepares a B4C / SiC whisker / SiC multiphase ceramic matrix composite material which is composited with multiple ceramic phases of SiC whisker, SiC particle and B4C particle, and improves the comprehensive performance of the composite material. The present invention adopts the spontaneous infiltration reaction method, inherits the advantages of the spontaneous infiltration reaction method, and utilizes Si or its alloys to form porous preforms composed of B4C and rice husk silicon carbide whisker products rich in SiC whiskers. Infiltration and reaction sintering to obtain dense multiphase ceramic matrix composites and their products.

Description

Technical field [0001] The present invention belongs to the field of ceramic base composite materials technology. Specifically, it is a SIC crystal beard, SIC particles and B 4 C multiple ceramic -phase composite ceramic base composite materials and its products. Background technique [0002] Boron boron (B 4 C) The hardness of the ceramic is second only to diamond and cubic boron nitride, especially its nearly constant high temperature hardness (> 30GPa) is incomparable with other materials.In B 4 In C, carbon and boron are mainly combined with covalent bonds, which have the characteristics of high melting points, high hardness, high modular amount, small capacity, wear resistance, etc.B 4 C does not react with the pH and most inorganic compounds at room temperature. It only has slow corrosion in hydrofluoric acid -sulfuric acid and hydrofluoric acid mixture. It is one of the most stable chemical compounds.B 4 C also has good neutron, oxygen absorption capacity, lower expansi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/81C04B35/563C04B35/565C04B35/528C04B35/622
Inventor 高明霞巫红燕潘颐潘洪革刘永锋朱丹
Owner ZHEJIANG UNIV