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Preparation method of quantum dot sensitized solar cell

A technology of quantum dot sensitization and solar cell, which is applied in the field of preparation of quantum dot sensitized solar cells, can solve the problems such as no patent reports at home and abroad, and achieve the effects of easy large-scale preparation, simple process and cost reduction.

Inactive Publication Date: 2012-02-22
INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention proposes to dissolve elemental metal or elemental arsenic, metal chalcogenides or arsenic trisulfide, and elemental sulfur, selenium, tellurium or their ammonium salts or hydrazine salts in water or hydrazine as the precursor solution of quantum dots , the research work in this area has not yet been reported by domestic and foreign patents

Method used

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  • Preparation method of quantum dot sensitized solar cell
  • Preparation method of quantum dot sensitized solar cell
  • Preparation method of quantum dot sensitized solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Example 1: SnSe 2 Quantum dot sensitized TiO 2 Preparation of solar cells

[0026] Take 3mmol selenium (Se), dissolve it in 3mL hydrazine, stir to obtain red clear Se-N 2 h 4 solution. Take 1mmol tin (Sn), add to the above Se-N 2 h 4 Solution, while adding 1mL hydrazine, stirred to obtain a yellow and clear precursor solution. TiO with a thickness of 10 μm 2 The film was soaked in the above precursor solution for 20min, taken out and dried at room temperature, then placed in N 2 After heating and annealing at 300°C under atmosphere, SnSe 2 Quantum dot sensitized TiO 2 film. will get SnSe 2 Quantum dot sensitized TiO 2 thin film as photoanode, using I - / I 3 - Electrolyte system (0.1M guanidine thiocyanate, 0.45M N-methylbenzimidazole, 0.6M 1,2-dimethyl-3-propylimidazole iodine, 0.1M iodine, methoxy propionitrile solvent), with The platinum-coated FTO conductive glass is used as the counter electrode, and the assembled SnSe 2 Quantum dot sensitized TiO ...

Embodiment 2

[0027] Example 2: SnS 2 Quantum dot sensitized TiO 2 Preparation of solar cells

[0028] Take 3mmol sulfur (S), dissolve it in 3mL hydrazine, stir to get red clear S-N 2 h 4 solution. Take 1mmol tin (Sn), add to the above S-N 2 h 4 Solution, while adding 1 mL of hydrazine, stirred at 130 ° C to obtain a colorless or slightly yellow clear precursor solution. TiO with a thickness of 10 μm 2 The film was soaked in the above precursor solution for 60min, taken out and dried at room temperature, then placed in N 2 After heating and annealing at 300°C under atmosphere, SnS 2 Quantum dot sensitized TiO 2 film. will get SnS 2 Quantum dot sensitized TiO 2 The thin film is used as a photoanode, and a polysulfide electrolyte system (0.5M sodium sulfide, 0.2M sulfur, 0.2M potassium chloride, water / methanol mixed solvent (volume ratio 7:3)) is used, and cuprous sulfide is used as a counter electrode. SnS 2 Quantum dot sensitized TiO 2 Solar cells, after testing, the effectiv...

Embodiment 3

[0029] Example 3: As 2 S 3 Quantum dot sensitized SnO 2 Preparation of solar cells

[0030] Take 0.492g As 2 S 3 , dissolved in 10 mL of (NH 4 ) 2 S aqueous solution, stirred to obtain (NH 4 ) 3 AsS 3 precursor solution. SnO with a thickness of 5 μm 2 The film was soaked in the above precursor solution for 60min, taken out and dried at room temperature, then placed in N 2 After heating and annealing at 300°C under atmosphere, As 2 S 3 Quantum dot-sensitized SnO 2 film. will get As 2 S 3 Quantum dot sensitized SnO 2 The thin film is used as the photoanode, the conductive polymer poly3-hexylthiophene is used as the solid electrolyte, and the thermally evaporated gold is used as the counter electrode, and the assembled As 2 S 3 Quantum dot sensitized SnO 2 Solar cells, after testing, the effective area is 0.25cm 2 The photoelectric conversion efficiency of the cell is 0.1%.

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Abstract

The invention discloses a preparation method of a quantum dot sensitized solar cell. The preparation method comprises the following steps: dissolving any one or more of elemental metal or an arsenic element, a metal chalcogenide or arsenous sulfide as well as any one or more of a sulfur element, ammonium salt or hydrazinium salt of sulfur, a selenium element, ammonium salt or hydrazinium salt of selenium, a tellurium element and ammonium salt or hydrazinium salt of tellurium in water or hydrazinium so as to form precursor solution, wherein, the solution takes NH4<+> or N2H5<+> as a cation andcombination of metal or arsenic and a sulfur group element as an anion; soaking an oxide semiconductor film electrode in the obtained precursor solution or coating the precursor solution on the oxidesemiconductor film electrode by the methods of tape casting, dispensing, spin-coating, dip-coating, screen printing or ink-jet printing; heating and annealing the obtained oxide film electrode adsorbed with a precursor; and finally assembling the obtained quantum dot sensitized oxide electrode, electrolyte and a counter electrode into the quantum dot sensitized solar cell.

Description

technical field [0001] The invention relates to the technical field of solar cell preparation, in particular to a method for preparing a quantum dot sensitized solar cell. Background technique [0002] Solar cells are one of the most effective technical solutions among various clean energy technologies, and it is of great significance to solve energy and environmental problems in the process of human development. In recent years, many new solar cell technologies have emerged, and inorganic semiconductor quantum dot sensitized solar cells are one of them. Inorganic semiconductor quantum dot-sensitized solar cells generally use narrow-bandgap inorganic semiconductor quantum dots as photosensitizers, deposit them on wide-bandgap oxide semiconductor thin film electrodes, and assemble them with electrolytes and counter electrodes to form cells. [0003] In the steps of preparing inorganic semiconductor quantum dot-sensitized solar cells, it is a crucial step to deposit inorganic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/04H01M14/00H01L31/18
CPCY02P70/50
Inventor 朱俊胡林华戴松元余学超
Owner INST OF PLASMA PHYSICS CHINESE ACAD OF SCI
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