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Method for preparing graphene composite thin film on surface of silicon slice

A graphene composite and silicon wafer surface technology, applied in the field of thin film preparation, can solve problems such as poor interface bonding performance, achieve low cost, be suitable for large-scale industrial production, and improve photoelectric conversion efficiency

Inactive Publication Date: 2012-07-18
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this prior art only simply blends graphene
Therefore, there are disadvantages such as poor interfacial bonding performance after blending and preparing composite materials.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The raw materials used include: graphene oxide: graphene oxide produced by a certain company; aminosilane: 3-aminopropyl-triethoxysilane (APTES) sold by Shanghai Jingchun Reagent Co., Ltd.; the rare earth solution is prepared according to the following weight percentages :

[0025] Lanthanum Chloride: 0.5%, Ethanol: 99.3%, EDTA 0.05%, Ammonium Chloride: 0.1%, Nitric Acid 0.02%, Urea: 0.03%

[0026] First, pre-treat the silicon wafer, soak the silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool it naturally at room temperature, take out the silicon wafer, rinse it repeatedly with deionized water, put it in Dry in a desiccator. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device, and dried in an oven.

[0027] Next, immerse the treated silicon wafer in the prepared aminosilane solution and let it...

Embodiment 2

[0031]The raw materials used include: graphene oxide: graphene oxide produced by a certain company; aminosilane: 3-aminopropyl-triethoxysilane (APTES) sold by Shanghai Jingchun Reagent Co., Ltd.; the rare earth solution is prepared according to the following weight percentages :

[0032] Lanthanum Chloride: 1%, Ethanol: 98.8%, EDTA 0.05%, Ammonium Chloride: 0.1%, Nitric Acid 0.02%, Urea: 0.03%

[0033] First, pre-treat the silicon wafer, soak the silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool it naturally at room temperature, take out the silicon wafer, rinse it repeatedly with deionized water, put it in Dry in a desiccator. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device, and dried in an oven.

[0034] Next, immerse the treated silicon wafer in the prepared aminosilane solution and let it st...

Embodiment 3

[0038] The raw materials used include: graphene oxide: graphene oxide produced by a certain company; aminosilane: 3-aminopropyl-triethoxysilane (APTES) sold by Shanghai Jingchun Reagent Co., Ltd.; rare earth modifier according to the following weight Percent preparation:

[0039] Cerium Oxide: 2%, Ethanol: 95%, EDTA 0.5%, Ammonium Chloride: 1%, Nitric Acid 0.5%, Urea: 1%

[0040] The preparation of the reduced graphene oxide composite film comprises the following steps:

[0041] (1) First, pretreat the silicon wafers with PN junctions, soak the silicon wafers in aqua regia, heat the aqua regia in an electric furnace for 6 hours, cool naturally at room temperature, take out the silicon wafers, and use Rinse repeatedly with deionized water, dry in a drying dish, and then soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device, and dried in an oven at 90°C for...

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Abstract

The invention relates to a method for preparing a graphene composite thin film on the surface of a silicon slice. The method comprises the following steps of: performing surface treatment on the silicon slice with a PN node; preparing amino silane on the surface of the silicon slice by adopting a self-assembly method by taking the silicon slice as a substrate material; putting the substrate into a graphene oxide dispersing solution; and preparing the graphene oxide composite thin film on the surface of the substrate. Compared with the prior art, the method has the advantages that: the process is simple, the cost is low, the photoelectric performance of a solar battery can be improved, and the graphene composite thin film is expected to be an ideal photoelectric conversion material of a photovoltaic industry.

Description

technical field [0001] The invention belongs to the field of film preparation, and relates to a method for preparing a graphene composite film, in particular to a method for preparing an aminosilane-rare earth modified graphene oxide composite film on the surface of a silicon wafer. Background technique [0002] As China's economy booms, energy demand is growing at a worrisome pace: 12 percent in the last year alone. According to the current consumption rate, in another 120 years, the world's coal resources will be exhausted; about 40 to 50 years later, the world's oil resources will be exhausted. While traditional fossil energy has brought huge benefits to mankind, it has also brought a series of serious consequences such as environmental pollution and the greenhouse effect, and the situation has worsened in recent years. [0003] It is generally believed internationally that in the long-term energy strategy, solar photovoltaic power generation has a more important positio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50
Inventor 程先华雷子恒王传英程海正疏达
Owner SHANGHAI JIAO TONG UNIV
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