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Gallium-doped zinc oxide film, and preparation method and application thereof

A gallium-doped zinc oxide and thin film technology, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve problems such as unstable conductivity and poor crystal quality of GZO thin film

Inactive Publication Date: 2014-08-27
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at high deposition rates and low substrate temperatures, even if samples with good adhesion and uniform film formation can be obtained in a short period of time, it is difficult to avoid the problems of poor crystal quality and unstable conductivity of GZO films.

Method used

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  • Gallium-doped zinc oxide film, and preparation method and application thereof
  • Gallium-doped zinc oxide film, and preparation method and application thereof
  • Gallium-doped zinc oxide film, and preparation method and application thereof

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preparation example Construction

[0018] see figure 1 , showing a method for preparing a gallium-doped zinc oxide thin film according to an embodiment of the present invention, which includes the following steps:

[0019] S01: Ga 2 o 3 Powder and ZnO powder are mixed and sintered as GZO target material, the Ga 2 o 3 The mass ratio of the powder to the ZnO powder is 1 / 1999 to 1 / 99;

[0020] S02: Put the GZO target into the magnetron sputtering cavity, vacuumize, set the working pressure to 0.2Pa-1.5Pa, the inert gas flow rate to 15sccm-35sccm, the sputtering power to 60W-160W, and the sputtering Gallium zinc oxide thin film;

[0021] S03: Anneal the gallium-doped zinc oxide thin film prepared above, the annealing atmosphere is a mixed gas of inert gas and hydrogen, wherein the molar volume percentage of hydrogen is 5% to 30%, and the annealing temperature is 200°C to 600°C ℃.

[0022] In step S01, the Ga 2 o 3 Sinter at a temperature of 900°C to 1350°C to obtain a GZO ceramic target. Preferably, Ga 2...

Embodiment 1

[0030] Use Ga 2 o 3 :ZnO=1:999 (mass ratio) powder, after being evenly mixed, sintered at 1250°C at high temperature to form a Φ60×2mm ceramic target, and put the GZO target into the vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50 mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4 Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the GZO target is 100W, and the gallium-doped zinc oxide film is obtained by sputtering. After testing, its resistivity is 2.5×10 -2 Ω·cm. Then the obtained gallium-doped zinc oxide film is annealed with a mixed gas of argon and hydrogen, wherein the molar volume percentage of hydrogen is 5%, the annealing temperature is 300°C, the heating rate is 3°C / min, an...

Embodiment 2

[0032] Use Ga 2 o 3 :ZnO=1:999 (mass ratio) powder, after being evenly mixed, sintered at 1250°C at high temperature to form a Φ60×2mm ceramic target, and put the GZO target into the vacuum chamber. Then, the quartz substrate was ultrasonically cleaned with acetone, absolute ethanol and deionized water, dried with high-purity nitrogen, and placed in a vacuum chamber. The distance between the target and the substrate was set to 50mm. Use a mechanical pump and a molecular pump to evacuate the cavity to 6.0×10 -4Pa, the argon gas of 20 sccm is introduced, and the pressure is adjusted to 1.0 Pa. The sputtering power of the GZO target was 100W, and the gallium-doped zinc oxide thin film was obtained by sputtering. Then the obtained gallium-doped zinc oxide film is annealed with a mixed gas of argon and hydrogen, wherein the molar volume percentage of hydrogen is 15%, the annealing temperature is 450°C, the heating rate is 4°C / min, and the holding time is 3h. The resistivity o...

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Abstract

The invention relates to the field of semiconducting material preparation, and provides a preparation method of a gallium-doped zinc oxide film. The method comprises the following steps: mixing Ga2O3 powder and ZnO powder with the mass ratio of Ga2O3 powder to ZnO powder being 1 / 1999 to 1 / 99, and sintering the mixture as a GZO target material; filling the GZO target material into a magnetron sputtering cavity, carrying out vacuumizing, with the working pressure set as 0.2 Pa to 1.5 Pa, the inert gas flow as 15sccm to 35sccm, and sputtering power of the GZO layer as 60 to 160 W, and sputtering to obtain the gallium-doped zinc oxide film; and annealing the above prepared gallium-doped zinc oxide film, with the annealing atmosphere being a mixed gas of an inert gas and hydrogen gas, wherein the molar volume percentage content of the hydrogen gas in the mixed gas is 5% to 30% and the annealing temperature is 200 DEG C to 600 DEG C. The invention further provides the gallium-doped zinc oxide film prepared by the method and an application of the gallium-doped zinc oxide film in semiconductor photoelectric devices.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic material preparation, and in particular relates to a preparation method of a gallium-doped zinc oxide thin film, the prepared thin film and its application. Background technique [0002] Transparent conductive film is an optoelectronic material that combines optical transparency and electrical conductivity. Due to its excellent optoelectronic properties, it has become a research hotspot and a frontier topic in recent years. Although ITO film is currently the most widely used transparent conductive film material with excellent comprehensive photoelectric properties, indium is toxic, expensive, poor in stability, and easy to be reduced in a hydrogen plasma atmosphere. People are trying to find a low-cost It is an ITO replacement material with excellent performance. Among them, Ga-doped ZnO (GZO thin film for short) has the characteristics of cheap material, non-toxic, and electrical and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/58
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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