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Chemical amplification-type positive photoresist, preparation method and application thereof in two-photon fine processing

A technology of positive photoresist and chemical amplification, which is applied in the direction of photomechanical equipment, pattern surface photolithography, optics, etc., can solve the difficulties in the preparation of chemically amplified positive photoresist, low processing energy threshold, processing Problems such as high resolution, achieve the effect of low processing energy threshold, good electron donating ability, and high processing resolution

Inactive Publication Date: 2012-11-07
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The first technical problem to be solved by the present invention is to provide a chemically amplified positive photoresist; the photoresist contains a two-photon sensitized acid-generating system; Dissolution inhibitors, solvents, etc. are composed according to a certain ratio, and have the characteristics of high processing resolution and low processing energy threshold. The problem of being too slow

Method used

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  • Chemical amplification-type positive photoresist, preparation method and application thereof in two-photon fine processing
  • Chemical amplification-type positive photoresist, preparation method and application thereof in two-photon fine processing
  • Chemical amplification-type positive photoresist, preparation method and application thereof in two-photon fine processing

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Embodiment 1

[0047] A chemically amplified positive photoresist containing a two-photon sensitized acid-generating system, comprising the following raw materials in parts by weight:

[0048] In the general formula M1, A1, A2, A3, and A4 are all hydrogen atoms, is the dye S1 of cyclopentanone as a two-photon sensitizer;

[0049]

[0050] Under dark conditions, dissolve 20mg of S1 and 120mg of N-hydroxyphthalimide triflate in 15g of N,N dimethylformamide, after the dissolution is complete, add 4g of t-BOC Protected poly-4-hydroxystyrene, placed in the dark for 4h, and stirred evenly. Coat the prepared two-photon polymerization resin on a glass sheet, bake at 90°C for 5 minutes to remove solvent residue, use Ti-Sapphire femtosecond as a laser light source, pulse width 80 femtoseconds, repetition frequency 80MHz, wavelength 780nm, output power 0.35mw , the laser beam is focused into the two-photon chemically amplified positive photoresist film through a microscope with a magnification of...

Embodiment 2

[0052] A chemically amplified positive photoresist containing a two-photon sensitized acid-generating system, comprising the following raw materials in parts by weight:

[0053] In the general formula M1, A1 and A2 are hydrogen atoms, A3 and A4 are methyl groups, is the dye S2 of cyclobutanone as a two-photon sensitizer;

[0054]

[0055] Under dark conditions, dissolve 10mg S2 and 100mg N-hydroxyphthalimide trifluoromethanesulfonate in 15g diethylene glycol dimethyl ether, after the dissolution is complete, add 4g part of t-BOC to protect poly-4-hydroxystyrene, placed in the dark for 4h, and stirred evenly. Coat the prepared two-photon polymerization resin on a glass sheet, bake at 90°C for 5 minutes to remove solvent residue, use Ti-Sapphire femtosecond as the laser light source, pulse width 80 femtosecond, repetition frequency 80MHz, wavelength 750nm, output power 0.5mw , the laser beam is focused into the two-photon chemically amplified positive photoresist film thro...

Embodiment 3

[0057] A chemically amplified positive photoresist containing a two-photon sensitized acid-generating system, comprising the following raw materials in parts by weight:

[0058] In the general formula M2, A1 and A2 are both methyl groups, A3 is a hydrogen atom, is the dye S3 of cyclobutanone as a two-photon sensitizer;

[0059]

[0060] Under light-shielding conditions, 15 mg of S3 and 60 mg of bis(trichloromethyl) triazine were dissolved in 15 g of acetic acid ethylene glycol methyl ether. After the dissolution was complete, 5 g of t-BOC-protected poly-4-hydroxystyrene was added. Place it under dark conditions for 4h, and stir well. Coat the prepared two-photon polymerization resin on a glass sheet, bake at 90°C for 5 minutes to remove solvent residue, use Ti-Sapphire femtosecond as a laser light source, pulse width 80 femtosecond, repetition frequency 80MHz, wavelength 800nm, output power 0.30mw , the laser beam is focused into the two-photon chemically amplified posit...

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Abstract

The present invention discloses a chemical amplification-type positive photoresist, including raw materials of the following: in parts by weight, 0.0001 to 2 parts of a photosensitizing dye, 0.005 to 10 parts of a photoacid generator, 5 to 80 parts of an acid degradation resin, 0 to 60 parts of a dissolution inhibitor, and 20 to 90 parts of an organic solvent. The invention also discloses a preparation method and application of the photoresist. The invention is characterized in that: a sensitized acid-generation system is simple in composition and convenient in preparation, and has reliable acid-generation effect under the excitation of two-photon; the sensitizer two-photon absorption is large in cross-section, simple in synthesization, and low in cost; and the photoresist prepared by the sensitized acid-generation system has a high processing resolution, and a low processing energy threshold value.

Description

technical field [0001] The invention belongs to the field of chemically amplified positive photoresist, in particular to a chemically amplified positive photoresist, a preparation method and its application in two-photon fine processing. Background technique [0002] Two-photon processing technology has the advantages of strong material penetration and high spatial resolution, and has broad application prospects in the field of three-dimensional ultrafine micromachining. The preparation of the corresponding photoresist is the key content of the development of two-photon processing technology. At present, the materials used in the research of two-photon processing are mainly: 1) Commercial negative photoresist, such as the radical polymerization photoresist SCR500 of Japan Synthetic Rubber Co., Ltd., and the cationic polymerization photoresist SU of MicroChem Corporation of the United States. -8. Since the initiating components in these materials absorb in the ultraviolet b...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/039G03F7/00
Inventor 吴飞鹏袁浩赵榆霞
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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