Nanometer impression device and nanometer impression method for high-brightness light-emitting diode (LED) graphics

Abstract

The invention discloses a nanometer impression device and a nanometer impression method for high-brightness light-emitting diode (LED) graphics. The nanometer impression device comprises a wafer bearing platform, a vacuum sucking disc, a substrate, a ultraviolet light cured nanometer impression slushing compound and the like. A die is a thin film elastic composite flexible die and comprises a graphical layer and a supporting layer, wherein the graphical layer has the characteristics of water solubility, thin-film structure, elasticity and high transparency, and the die is manufactured by adopting a rolling impression process. The nanometer impression method for achieving high-brightness LED graphics based on the device comprises the steps of (1) pre-processing, (2) impression, (3) curing, (4) demoulding, (5) post-processing and (6) transferring of impression graphics. By means of the nanometer impression device and the nanometer impression method, a large-area, high-aspect-ratio micro-nanometer structure is efficiently manufactured on an unsmooth surface or a curved surface substrate or a fragile substrate with low cost. The nanometer impression device and the nanometer impression method are suitable for large-scale manufacture of optical devices, three-dimensional miniature batteries, micro-electromechanical system (MEMS) devices, photovoltaic devices, anti-reflecting layers, self-cleaning surfaces and the like and are especially suitable for the LED graphics and industrial-grade large-scale production of wafer-level splicing-free micro-optical devices.

Description

technical field [0001] The invention belongs to the technical field of micro-nano manufacturing and optoelectronic device manufacturing, and in particular relates to a nano-imprinting device and method for high-brightness LED patterning. Background technique [0002] LED patterning (sapphire substrate patterning and LED epitaxial wafer patterning) has been considered by academia and industry to be the most effective way to improve light generation efficiency and light extraction efficiency and improve light source quality (control light emission direction and far-field pattern uniformity) Approaches, namely the so-called nano-patterned sapphire substrate (Nano-Patterned Sapphire Substrate, NPSS) and LED epitaxial wafer patterning technology (Photonic Crystal LED, photonic crystal LED; Nanorod LED, nanorod LED; Nanowire LED, nanowire LED) , is currently considered by the industry as one of the most effective technical means to improve light extraction efficiency and realize u...

AI Technical Summary

Problems solved by technology

Therefore, it is extremely difficult to manufacture large-area, high-aspect-ratio micro-nano structures on the surface of non-flat LED epitaxial wafers or sapphire substrates efficiently, at low cost, and on a large scale by using various existing micro-nano manufacturing methods, which cannot meet the needs of LEDs. Demand for Graphical Industrial Grade Applications

For example, due to the warping, bending, surface wavy shape and sharp protrusions of LED epitaxial wafers, the focal depth ratio of traditional optical lithography cannot meet the requirements of exposure; the use of electron beam lithography to manufacture large-area nanostructures has high costs and low productivity. Difficult to achieve large-scale, large-scale manufacturing

For NPSS, the use of existing contact or proximity lithography equipment cannot meet the requirements of nano-pattern manufacturing accuracy. Although stepper projection lithography (Stepper) can be used to achieve NPSS manufacturing, the Stepper used in the semiconductor industry is in the LED industry. Too expensive, greatly increasing the manufacturing cost of LEDs

LEDs are very sensitive to cost

In addition, some companies currently use second-hand refurbished Stepper, but there are problems in product yield and equipment reliability.

Interference lithography has great advantages in the manufacture of large-area periodic micro-nano structures, but this method has significant shortcomings: small depth of focus, poor selectivity of nano-structure patterns, and harsh requirements for the production environment (compared to LED production process Poor compatibility), especially at present, almost no commercial company provides a mature interference lithography machine (manufacturing of large-scale wafer nanopatterns)

However, the existing nanoimprint process applied to LED patterning still has many deficiencies in terms of mold life, productivity, yield, and reliability. In particular, it still faces some challenging technical problems, such as large-area demoulding difficulties and soft mold deformation. , granular dirt and sharp protruding defects for mold damage, consistency and repeatability of embossed graphics, etc.

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