The invention discloses a nanometer impression device and a nanometer impression method for high-brightness light-emitting
diode (LED)
graphics. The nanometer impression device comprises a
wafer bearing platform, a vacuum sucking disc, a substrate, a
ultraviolet light cured nanometer impression slushing compound and the like. A die is a thin film elastic composite flexible die and comprises a graphical layer and a supporting layer, wherein the graphical layer has the characteristics of water
solubility, thin-
film structure, elasticity and high transparency, and the die is manufactured by adopting a rolling impression process. The nanometer impression method for achieving high-brightness LED
graphics based on the device comprises the steps of (1) pre-
processing, (2) impression, (3) curing, (4) demoulding, (5) post-
processing and (6) transferring of impression
graphics. By means of the nanometer impression device and the nanometer impression method, a large-area, high-aspect-ratio micro-nanometer structure is efficiently manufactured on an unsmooth surface or a curved surface substrate or a fragile substrate with low cost. The nanometer impression device and the nanometer impression method are suitable for large-scale manufacture of optical devices, three-dimensional miniature batteries, micro-electromechanical
system (MEMS) devices, photovoltaic devices, anti-reflecting
layers, self-cleaning surfaces and the like and are especially suitable for the LED graphics and industrial-grade large-scale production of
wafer-level splicing-free micro-optical devices.