Method for preparing self-supporting multilayer micro nano structure

A technology of micro-nano structure and nano-structure, applied in the direction of micro-structure technology, micro-structure devices, manufacturing micro-structure devices, etc., can solve the problems of limited preparation methods of multi-layer nanowires, achieve high practical application value, and good controllability , the effect of high flexibility

Active Publication Date: 2015-04-15
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, the preparation methods of concentric multilayer nanowires are very limited

Method used

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  • Method for preparing self-supporting multilayer micro nano structure
  • Method for preparing self-supporting multilayer micro nano structure
  • Method for preparing self-supporting multilayer micro nano structure

Examples

Experimental program
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preparation example Construction

[0025] The preparation method of the self-supporting multilayer micro-nano structure comprises the following steps:

[0026] Step S1: Select a flat substrate 1 and clean it;

[0027] Step S2: preparing a multilayer film structure 2 on a flat substrate 1 to obtain a multilayer film substrate 3;

[0028] Step S3: preparing a self-supporting matrix nanostructure 4 on the surface of the multilayer film substrate 3 to obtain a multilayer film substrate self-supporting matrix nanostructure system;

[0029] Step S4: Put the multilayer film substrate self-supporting matrix nanostructure system into the sample chamber of the ion etching system, and perform ion beam dry etching on the multilayer film substrate self-supporting matrix nanostructure system; during the etching process, Except for the part covered by the self-supporting matrix nanostructure 4, the substances on the surface of the multilayer film substrate 3 will be sputtered from top to bottom under the bombardment of the i...

Embodiment 1

[0051] Fabrication of polycrystalline / single-crystalline bilayer concentric Si cone arrays on Si substrates. Include the following steps:

[0052] (1) cleaning of the silicon substrate 1;

[0053] Sonicate the silicon substrate sequentially with acetone, alcohol, and deionized water for a period of time (5min-10min), blow dry the surface of the silicon substrate with a nitrogen gun and bake it on a hot plate at 120-200 degrees Celsius for 10-20 minutes.

[0054] (2) Preparation of monocrystalline silicon self-supporting parent nanowires 4 perpendicular to Si substrate 1;

[0055] Spin-coat one deck electron beam photoresist polymethylmethacrylate PMMA (495,5%) on the silicon substrate 1 after (1) processing, 4000 rev / mins, then use the method for electron beam exposure on Expose the circular hole array on the PMMA photoresist, the electron beam acceleration voltage used is 10 kilovolts, and the exposure dose is 100 microamperes / square centimeter; 3 in the developer solution...

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Abstract

The invention discloses a method for preparing a self-supporting multilayer micro nano structure. The method comprises the following steps of: selecting and cleaning a flat substrate; growing a multilayer film structure on the flat substrate to form a multilayer film substrate; preparing a self-supporting mother body nano structure on the multilayer film substrate to form a self-supporting mother body nano structure system with the multilayer film substrate; performing ionic beam dry-method etching on the self-supporting mother body nano structure system with the multilayer film substrate to obtain the self-supporting multilayer micro nano structure; and performing annealing treatment on the self-supporting multilayer micro nano structure to obtain a self-supporting multilayer micro nano structure finished product. According to the preparation method, based on a re-deposition phenomenon of the multilayer film substrate material in the dry-method etching process, the self-supporting nano structure on the multilayer film substrate is wrapped with a layer of substrate material, so that the self-supporting multilayer micro nano structure which is not positioned in the plane of the multilayer film substrate; and the method has the characteristics that the process is simple and is easy to implement; the cost is low; the flexibility is high; the construability is high; large-area processing is realized; and structure materials used for preparation are readily available.

Description

technical field [0001] The invention relates to the technical field of three-dimensional micro-nano devices, and is a method for manufacturing a three-dimensional self-supporting multi-layer micro-nano structure, in particular to a method for sputtering base materials based on ion dry etching, so that the sputtered substances are evenly attached to the self-supporting surface. Supporting the parent nanostructure, thereby preparing a self-supporting multilayer micro-nanostructure. Through the control of the composition of the substrate material and the multilayer film material, the material type and structure of the prepared self-supporting multilayer micro-nano structure can be precisely designed and adjusted, and it has the advantages of simple process, flexibility, large area, and uniform preparation. specialty. Background technique [0002] With the development of nanotechnology, the research on the physical properties of low-dimensional materials has become more and mor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B82Y30/00B82Y40/00
Inventor 顾长志崔阿娟李无瑕刘哲
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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