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A kind of preparation method of boron-doped titanium dioxide film

A titanium dioxide, boron doping technology, applied in metal material coating process, coating, solid diffusion coating and other directions, can solve the problems of high mechanical transportation cost, difficult secondary processing, prolonged production time, etc., and shorten the preparation time. , Easy secondary processing, easy processing effect

Active Publication Date: 2016-01-27
紫辉(南京)科技新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, TiO 2 The forbidden band width is relatively large (Eg=3.0~3.2Ev), it can only be activated by ultraviolet light below 400nm, and its poor absorption of visible light greatly limits its application range
Doping with metals or non-metals is usually used to increase its visible light activity. At present, the doping of non-metals such as C, N, S, B and other elements, as well as the doping of Fe, Cr, Sb and rare earth elements and other metal elements have been reported. Doping, etc., but supported TiO 2 Research on photocatalysts mostly focuses on glass, silicon wafers, and ceramics as substrates, but glass and ceramic plates are easily broken and difficult for secondary processing, which limits their application.
[0003] The post-plating treatment in the prior art is as follows: the metal workpiece after permeation is placed in a muffle furnace for treatment, and the oxygen in the air or the oxygen in the air is directly used to react with the titanium boride film on the surface of the metal substrate workpiece, and this Due to the high temperature of the workpiece in mass production, manual transportation is inconvenient, and the cost of mechanical transportation is high. The workpiece can only be processed when the workpiece is cooled to room temperature, and the equipment such as muffle furnace is added, which increases the cost and prolongs the production time. production time

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029] A method for preparing a boron-doped titanium dioxide film, comprising the following steps:

[0030] 1) In the double-layer glow ion metallization furnace, the solid compound titanium diboride is fixed on the source, the metal workpiece is placed on the cathode, and the anode is connected to the furnace shell and grounded.

[0031] 2) Then pump the interior of the double-layer glow ionization metallization furnace to a limit vacuum of 1×10 -1 Pa, the furnace is filled with argon gas to keep the air pressure between 15-18Pa, and the cathode voltage is increased to 500V-600V to heat up the metal workpiece for the first time. When the temperature of the metal workpiece rises to 400-600℃, ionization Bombard for 20-40 minutes.

[0032] Control and adjust the flow ratio of 1:1 to feed the mixed gas of argon and oxygen, so that the air pressure is maintained between 35 ~ 45Pa, and then adjust the cathode voltage to -350 ~ -550V, and connect the source power at the same time ...

Embodiment 1

[0034] Embodiment 1: Boron-doped titanium dioxide film is infiltrated on the surface of 1Cr17 type ferritic stainless steel:

[0035] TiB 2 The powder is pressed into a plate and fixed on the source, the 1Cr17 workpiece is placed on the cathode, and the anode is connected to the furnace shell and grounded.

[0036] Vacuum the inside of the double-layer glow ionization metallization furnace to a vacuum degree of 1×10 -1 After Pa, fill the furnace with argon to keep the air pressure between 15 and 18 Pa, and increase the cathode voltage to 500V. When the temperature of the metal workpiece rises to 600°C, carry out ion bombardment for 30 minutes.

[0037] Control and adjust the flow rate of 20mL / min of argon gas and 20mL / min of oxygen mixed gas to maintain the working pressure between 35 and 45Pa, then adjust the cathode voltage to -450V, and turn on the source power at the same time. Apply a DC voltage between the anode and the source to make the source voltage -1000V, continu...

Embodiment 2

[0038] Embodiment 2 in the 0Cr18Ni9 type austenitic stainless steel workpiece surface infiltration plating boron-doped titanium dioxide thin film:

[0039] TiB 2 The powder is pressed into a column and fixed on the source, the 0Cr18Ni9 workpiece is placed on the cathode, and the anode is connected to the furnace shell and grounded.

[0040] Vacuum the inside of the double-layer glow ionization metallization furnace to a vacuum degree of 1×10 -1After Pa, fill the furnace with argon to keep the air pressure between 15-18Pa, increase the cathode voltage to 600V, and carry out ion bombardment for 30min when the temperature of the metal workpiece rises to 400°C.

[0041] Control and adjust the flow rate of 30mL / min of argon gas and 30mL / min of oxygen mixed gas to maintain the working pressure between 35 and 45Pa, then adjust the cathode voltage to -400V, and connect the source power at the same time. Apply a DC voltage between the anode and the source to make the source voltage -...

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PUM

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Abstract

The invention relates to a preparation method of a boron doped titanium dioxide thin film. The preparation method comprises the following steps of: 1) fixing solid-state titanium diboride on a source electrode in a double glow plasma surface alloying furnace, putting a metal workpiece on a cathode, and connecting an anode to a furnace shell and grounding; 2) vacuumizing the inner part of the double glow plasma surface alloying furnace, charging argon, then switching on cathode power supply, applying a direct current voltage between an anode and the cathode and raising the temperature of the metal workpiece for the first time, and carrying out ion bombardment after raising the temperature of the metal workpiece; controlling and adjusting the mixed gas of the charged argon and oxygen, adjusting the voltage of the cathode again, and at the same time, switching on a source electrode power supply, applying the direct current voltage between the source electrode and the anode, raising the temperature of the metal workpiece for the second time when a source electrode voltage is -900V to -1100V, carrying out plasma depositing Ti and B to react with O2, then thermally insulating, and cooling to a room temperature after thermally insulating, thus obtaining the boron doped titanium dioxide thin film. The boron doped titanium dioxide thin film is simple in technology and low in production cost.

Description

technical field [0001] The invention relates to a method for preparing a boron-doped titanium dioxide film, which belongs to the technical field of metal surface treatment. Background technique [0002] Since the discovery in 1972 that semiconductor titanium dioxide can decompose water into hydrogen and oxygen under ultraviolet light, research on photocatalysis and photoelectrochemistry of titanium dioxide has been very active, and has been widely used in the development of photoelectric conversion solar cells, gas sensors, and solar water splitting systems. Photocatalytic degradation of hydrogen, sewage and waste gas, photocatalytic sterilization, self-cleaning and anti-fog, etc. Titanium dioxide has low cost, no secondary pollution, stable performance, and can drive photocatalytic reactions by using sunlight. However, TiO 2 Its forbidden band width is relatively large (Eg=3.0~3.2Ev), it can only be activated by ultraviolet light below 400nm, and its poor absorption of vi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C12/02C23C8/12
Inventor 王鹤峰李飞李咏梅黄晓波张莹李秀燕唐宾
Owner 紫辉(南京)科技新材料有限公司