Preparation method of cobalt oxide/graphene composite nano material
A compound technology of cobalt tetraoxide and graphene, which is applied in the field of materials, can solve the problems of difficult solid-liquid separation, many synthesis steps, and long time, and achieve the effect of simple synthesis equipment, simple process flow, and easy preparation
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Embodiment 1
[0033] Weigh 30 mg of glycine, add 8 ml of cobalt nitrate solution with a concentration of 0.06 mol / L, mix evenly by ultrasonic, add 100 ml of 0.5 mg / ml graphene oxide suspension dropwise, mix evenly by ultrasonic, put the mixture into In the ultrasonic atomization device with circulating cooling, set the nitrogen flow rate to 0.8 L / min, and turn on the atomization device with a piezoelectric ceramic plate frequency of 2.4 MHz. The solid product generated by the combustion reaction was collected by depositing a single crystal silicon wafer placed at the outlet end of the tube furnace.
Embodiment 2
[0035] Weigh 60 mg of glycine, add 15 ml of cobalt nitrate solution with a concentration of 0.06 mol / L, mix evenly by ultrasonic, add 100 ml of 0.5 mg / ml graphene oxide suspension dropwise, mix evenly by ultrasonic, put the mixture into In the ultrasonic atomization device with circulating cooling, set the nitrogen flow rate to 0.8 L / min, and turn on the atomization device with a piezoelectric ceramic plate frequency of 2.4 MHz. The solid product generated by the combustion reaction was collected by depositing a single crystal silicon wafer placed at the outlet end of the tube furnace.
Embodiment 3
[0037] Weigh 115 mg of ethylene glycol, add 25 ml of cobalt nitrate solution with a concentration of 0.06 mol / L, mix evenly by ultrasonic, add 100 ml of 0.5 mg / ml graphene oxide suspension dropwise, mix evenly by ultrasonic, and put the mixed solution into Into the ultrasonic atomization device with circulating cooling, set the nitrogen flow rate to 0.8 L / min, turn on the atomization device with a piezoelectric ceramic sheet frequency of 2.4 MHz, and the generated droplets are loaded into the furnace tube at 800 °C by nitrogen gas, causing The solid product generated by the combustion reaction of the solution is deposited on a single crystal silicon wafer placed at the outlet end of the tube furnace to collect samples.
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