Oxide sintered body and tablet obtained by processing same

By adjusting the constituent phases and texture of the oxide sintered body, an oxide sintered body with a density of 3.4–5.5 g/cm³ was prepared, solving the problems of cracking, rupture, and splashing in the ion plating film formation process. This enabled the efficient and stable fabrication of transparent conductive films, suitable for components such as solar cells.

Inactive Publication Date: 2013-10-09
SUMITOMO METAL MINING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In addition, in the method of evaporating and ionizing the oxide sintered body as the evaporating material (chip) by the ion plating method, and forming a thin film, there is a problem that the evaporating material is splashed during heating, and due to the scattered porosity defects in evaporated films
Moreover, Patent Document 4 mainly describes a sputtering target as in Patent Document 3, but even if a high-density sputtering target is used as a sheet for ion plating, cracks, cracks, or sputtering cannot be suppressed.
[0014] As described above, in the prior art related to the oxide sintered body containing indium and tungsten, it is important to mass-produce the crystalline transparent conductive film, and the cracks, cracks or cracks in the ion plating film formation Problems such as prevention of splashing have not been sufficiently studied, and an oxide sintered body containing indium and tungsten that solves these problems is expected.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0119] Indium oxide powder and tungsten oxide powder having an average particle diameter of 1.5 μm or less were used as raw material powders. About each powder, the tungsten content was weighed so that the atomic number ratio of W / (In+W) might be 0.006. Here, 50% by weight of the indium oxide powder and the total amount of the tungsten oxide powder were put into a resin tank together with water, a dispersant, and the like, and mixed with a wet ball mill. At this time, using hard ZrO 2 balls, set the mixing time to 18 hours. After mixing, the slurry was taken out, filtered, and dried to obtain primary mixed powder. Next, the primary mixed powder was heated up at a rate of 1° C. / min in a sintering furnace, and pre-baked at 1250° C. for 10 hours. The remaining indium oxide powder was not pre-fired.

[0120] Next, these calcined powders and non-calcined powders were mixed again using a wet ball mill. After mixing, the slurry was filtered and dried to obtain a secondary mixed ...

Embodiment 2

[0131] Except that the raw material powder was weighed so that the atomic number ratio represented by W / (In+W) was 0.018, an oxide sintered body was produced by the same method as in Example 1, and an ion-plated Use sheet.

[0132] As a result of analyzing the composition of the obtained oxide sintered body by ICP emission spectrometry, it was confirmed that it was substantially the same as the charged composition when weighing the raw material powder. The density of the oxide sintered body was measured and found to be 4.96g / cm 3 .

[0133] Next, phase identification of the oxide sintered body based on X-ray diffraction measurement was carried out. It is confirmed that the oxide sintered body is composed of In 2 o 3 phase and the Indium tungstate compound of In 6 WO 12 phase composition. Next, texture observation of the oxide sintered body and composition analysis of crystal grains by SEM-EDS were performed. As a result of the surface analysis of the element distributi...

Embodiment 3

[0140] Except that the raw material powder was weighed so that the tungsten content was 0.001 in terms of the atomic ratio represented by W / (In+W), an oxide sintered body was produced by the same method as in Example 1, and an ion Plates for plating.

[0141] As a result of analyzing the composition of the obtained oxide sintered body by ICP emission spectrometry, it was confirmed that it was substantially the same as the charged composition when weighing the raw material powder. The density of the oxide sintered body was measured and found to be 4.78g / cm 3 .

[0142] Next, phase identification of the oxide sintered body based on X-ray diffraction measurement was carried out. It was confirmed that the oxide sintered body is only composed of bixbyite-type In 2 o 3 phase composition. Next, texture observation of the oxide sintered body and composition analysis of crystal grains by SEM-EDS were performed. As a result of the surface analysis of the element distribution by ED...

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Abstract

The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W / (In + W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g / cm 3 .

Description

technical field [0001] The present invention relates to an oxide sintered body and a chip obtained by processing the same, more particularly to a chip for ion plating and an oxide sintered body for obtaining the chip for ion plating. The body can form a transparent conductive film suitable for solar cells at high speed, and can continue to form a film without causing cracks, cracks, or spattering. Background technique [0002] Transparent conductive films have high conductivity and high transmittance in the visible light region, and are therefore used in solar cells, liquid crystal display elements, electrodes of various other light-receiving elements, and the like. In addition, it is also used as a transparent heating element for various anti-fogging applications such as heat ray reflective films for automobile windows and construction applications, antistatic films, and freezer windows. [0003] Known as a practical transparent conductive film are: tin oxide (SnO 2 ) thi...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): C04B35/00C23C14/24
CPCC04B2235/6586C04B35/62675C04B2235/3232C04B2235/76C04B2235/326C04B2235/80C04B2235/77H01L31/022466C04B35/62695C04B35/01H01L2251/308Y02E10/52C04B2235/6585H01L51/442C23C14/3414C04B2235/3286C04B2235/6565C04B2235/6562C04B2235/604C23C14/3407C04B2235/3258C04B2235/5436H01L31/032C04B2235/3256C04B2235/3244H01B1/08H10K30/82H10K2102/103H10F77/244C04B35/00C04B35/495C23C14/24H10F77/12
OwnerSUMITOMO METAL MINING CO LTD