Si nanorod/qds composite silicon-based solar cell and preparation method thereof

A solar cell, cell technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., to achieve the effect of improving optoelectronic performance, good stability, and strong absorption

Inactive Publication Date: 2016-03-30
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The one-dimensional silicon nanorod structure can greatly enhance the light absorption rate of silicon-based solar cells, and has the advantage of low production cost, but the large recombination rate of surface carriers is the biggest obstacle to further improving the photoelectric conversion efficiency.

Method used

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  • Si nanorod/qds composite silicon-based solar cell and preparation method thereof
  • Si nanorod/qds composite silicon-based solar cell and preparation method thereof
  • Si nanorod/qds composite silicon-based solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (a) Dip the silicon-based cell into an anhydrous ethanol solvent for ultrasonic cleaning for 20 seconds, and then immerse it in twice distilled water for ultrasonic cleaning for 2 minutes.

[0031] (b) Prepare a mixed solution of 0.002mol / L silver nitrate and 0.5mol / LHF, and immerse the silicon wafer for 30s.

[0032] (c) configure 0.4mol / LH 2 o 2 , 0.5mol / LHF mixed solution, immerse the silicon chip for 30s, and ultrasonically clean it with concentrated nitric acid for 3min.

[0033] (d) configure 0.005mol / L lead acetate solution; add 0.01mol / L 3-mercaptopropionic acid; add 2×10 -4 mol / L cetyltrimethylammonium bromide to obtain the precursor solution. Prepare 0.005mol / L sulfide amine solution, the volume is the same as the lead acetate solution, slowly drop into the precursor solution at a rate of 20s.

[0034] (e) Immerse the treated silicon-based cell in the quantum dot colloid solution for 30s, pull it slowly at a speed of 0.5cm / s, and dry it slowly with a hair ...

Embodiment 2

[0037] This example differs from Example 1 in that: step b) the metal source is silver acetate with a concentration of 0.005 mol / L.

Embodiment 3

[0039] This example differs from Example 1 in that: step b) the metal source is ferric nitrate with a concentration of 0.005 mol / L. Step c) H 2 o 2 The concentration is 0.3mol / L, and the concentration of HF is 0.6mol / L.

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PUM

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Abstract

The invention provides a manufacturing method of a Si nanometer rod / QDs (quantum dots) composite effective silica-based solar cell. A light trapping structure of a one-dimensional Si nanometer rod can remarkably improve light absorption performance of the cell, but surface carrier combination rate of the Si nanometer rod is higher and is a greatest obstacle having an effect on further improving photoelectric conversion efficiency. Quantum dots are combined with the Si nanometer rod so as to form heterojunction due to close contact, quantum confinement effect and multi-exciton effect of the quantum dots are sufficiently utilized, separation and capture efficiency of hot carriers is improved, and photoelectric conversion efficiency of the silica-based solar cell is further improved. The silica-based solar cell is a monocrystalline-silicon, polycrystalline-silicon or microcrystalline-silicone semi-finished product or finished product. Further, the manufacturing method has the advantages of simplicity in process, high material utilization rate and low production cost, and is applicable to industrial massive production.

Description

technical field [0001] The invention relates to the fields of photoelectric nanometer materials and solar cells, in particular to Si nanorod / QDs composite silicon-based solar cells and a preparation method thereof. technical background [0002] Silicon-based cells are currently the photovoltaic devices with the highest conversion efficiency and the most mature technology. The theoretical conversion efficiency of crystalline silicon solar cells can reach 31%, the highest conversion efficiency reported by experiments is 25%, and the efficiency of finished cells produced industrially is about 15%. The main reason for restricting the photoelectric conversion efficiency of crystalline silicon cells is that the light absorption efficiency of crystalline silicon materials is not high: solar photons higher than the energy gap (1.12eV) of crystalline silicon are lost in the form of "hot electrons". A series of anti-reflection measures such as surface texturing, surface etching, emit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/20H01L31/0352H01L31/06B82Y40/00B82Y30/00
CPCB82Y30/00B82Y40/00H01L31/035218H01L31/074H01L31/18Y02E10/50Y02P70/50
Inventor 余锡宾冯吴亮李宇生尧志凌浦旭鑫夏玉胜刘洁
Owner SHANGHAI NORMAL UNIVERSITY
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