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A high-temperature heating deposition platform for chemical vapor deposition

A technology of chemical vapor deposition and high-temperature heating, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of unsatisfactory stability, and achieve the characteristics of not easy to oxidize and corrode, rapid temperature rise, and uniform heating Effect

Active Publication Date: 2016-08-17
BEIJING TECHNOL SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These innovative designs have played a positive role in the heating effect and efficiency of the deposition table, but the effective temperature that can be achieved does not exceed 800°C, and the stability is still not ideal

Method used

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  • A high-temperature heating deposition platform for chemical vapor deposition
  • A high-temperature heating deposition platform for chemical vapor deposition
  • A high-temperature heating deposition platform for chemical vapor deposition

Examples

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Embodiment 1

[0039] Silicon nitride thin films were grown on flat glass substrates using chemical vapor deposition (CVD). The flat glass substrate is placed on the high-temperature heating deposition table, the heater electrode is turned on, and the substrate is heated to 700°C and maintained. Ammonia gas and silane gas are fed in at a ratio of 15:1 to grow a silicon nitride film. After working for 100 hours, the temperature of the nickel-chromium alloy heating body measured by the thermocouple of the heating element is less than 900°C.

Embodiment 2

[0041]Boron-doped carbon coatings were grown on iron substrates using chemical vapor deposition (CVD). The iron substrate is placed on the high-temperature heating deposition table, the heating element electrode is turned on, and the substrate is heated to 1000°C and maintained. Boron trichloride, methane and hydrogen are passed in at a ratio of 1:2:30 to grow a boron-doped carbon coating. After working for 100 hours, the temperature of the nickel-chromium alloy heating body measured by the thermocouple of the heating element is less than 1150°C.

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Abstract

The invention discloses a high-temperature heating deposition platform for chemical vapor deposition, which belongs to the field of material preparation and processing. The invention improves the design of the heating deposition platform, coats a layer of 100nm chromium oxide thin film on the inner surface of the deposition platform, and improves the efficiency of the deposition platform to receive heat radiation by using the black body number of 0.8 of the chromium oxide. At the same time, for the heating body sealed inside the deposition table, its insulator support is designed as an array of ceramic pillars, which improves the heat dissipation efficiency of the heating body without affecting the support function. These improvements have greatly improved the heating efficiency and stability of this new type of high-temperature heating deposition platform, and can continue to work stably in the temperature range of 700 ° C to 1000 ° C, filling the technical gap of the heating deposition platform in the high temperature section.

Description

technical field [0001] The invention relates to semiconductor device material preparation technology, in particular to a high-temperature heating deposition platform for chemical vapor deposition, which can be applied to the preparation of various new thin film materials. Background technique [0002] Chemical vapor deposition (CVD for short) is a material preparation method widely used in the preparation of new thin film materials, especially semiconductor device materials. Since the gas molecules or ions that participate in the reaction during the CVD preparation of materials need to be deposited on the substrate at a certain temperature according to different processes, some CVD systems are equipped with a deposition table that can heat the substrate by itself. [0003] When using a CVD system to prepare materials, high temperature is an important means to promote the reaction between gases. Generally, the heated deposition table can heat the substrate to about 700°C, wh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/46C23C16/458
Inventor 陈良贤彭建施戈
Owner BEIJING TECHNOL SCI
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