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50results about How to "Not easy to oxidize and corrode" patented technology

Method for preparing BCZT-based leadless piezoelectric ceramics

The invention relates to the technical field of preparation of electronic components and devices and particularly relates to a method for preparing BCZT-based leadless piezoelectric ceramics. The method comprises the steps of dissolving citric acid in ethylene glycol, adding anhydrous ethanol diluted butyl titanate to obtain a compounding solution, dropwise adding a barium acetate solution, a calcium nitrate solution and a zirconium nitrate solution into the compounding solution, carrying out uniform mixing so as to obtain a BCZT-based polymer precursor, mixing NdFeB nano-powder with ferrum nano-powder so as to obtain magnetic powder slurry, mixing hard magnetic powder and core-shell structured ferrum/cobalt nano powder, then, carrying out high-speed dispersing treatment, and carrying outmold loading, spark plasma sintering and demolding, thereby obtaining the piezoelectric ceramics. Dense cobalt powder particles can be used for protecting ferrous powder from oxidation, tetrabutyl titanate reacts with citric acid to form a network structure, zirconium-calcium-barium titanate based materials are free of Pb and have little harm to human and environment, elemental cobalt will be slightly softened at high temperature, thus, the binding power of magnetic materials is enhanced, the coefficient of thermal conductivity of the magnetic materials is reduced, the magnetic materials can stably work in high-temperature environments, and the application prospect is broad.
Owner:景德镇市鑫惠康电子有限责任公司

Wafer-level chip packaging structure

The invention discloses a wafer-level chip packaging structure. The wafer-level chip packaging structure comprises an image sensing chip and a transparent cover plate, wherein metal conductive pattern layers electrically connected with pin bonding pads are arranged on the surface, with the back towards the image sensing chip, of a passivation layer and blind holes respectively. Each supporting cofferdam is composed of a first supporting cofferdam layer and a second supporting cofferdam layer which are placed in a vertically stacked mode, a plurality of continuously arranged V-shaped notched are formed in the inner side face of each second supporting cofferdam layer, arc-shaped notches are formed in the four corners of each second supporting cofferdam layer respectively, a plurality of holes are evenly formed in the surface, in contact with the image sensing chip, of each supporting cofferdam, each metal conductive pattern layer is formed by placing a titanium layer, a copper layer, a nickel layer and a palladium layer in a stacked mode in sequence, and the titanium layers are in contact with the passivation layer. According to the wafer-level chip packaging structure, stress is relieved, the structure is not prone to oxidation corrosion, the response time of a device is shortened, the reliability of a product is improved, and the requirement for continuously covering the inner wall of a deep hole with a high aspect ration with a metal layer can be met.
Owner:苏州科阳半导体有限公司

Glass manufacture device and manufacture method for high-transmittance optical glass

The invention belongs to the technical field of glass manufacture, particularly discloses a glass manufacture device and a manufacture method for high-transmittance optical glass, and aims to solve the problem that an electrode easily generates corrosion to influence the quality of produced glass in a traditional glass manufacture device use process. The glass manufacture device comprises a melting tank and an electrode, wherein a melting cavity is arranged in the melting tank; the electrode is arranged on the side wall of the melting cavity; the upper edge of the electrode is positioned below the upper limit of the liquid level of vitreous humour. The manufacture method for high-transmittance optical glass adopts the glass manufacture device to manufacture the high-transmittance optical glass. Since the electrode is under the liquid level of vitreous humour in a production process and only the vitreous humour is in contact with the electrode, the chemical property of the electrode is stable, oxide etch is unlikely to generate, and service life is prolonged; in addition, when a glass raw material is continuously or intermittently supplied to the melting tank, since a bare electrode is not arranged above the vitreous humour, the electrode is prevented from being subjected to powerful thermal shock, and the fatigue or damage of the electrode due to thermal shock can be avoided.
Owner:CDGM OPTICAL GLASS

Semiconductor device of novel package structure

The invention discloses a semiconductor device of a novel package structure. The semiconductor device comprises an image sensing chip and a transparent cover plate. A metal conductive pattern layer which is electrically connected with a pin bonding pad is arranged in a blind hole and on the surface, opposite to the image sensing chip, of a passivating layer. A supporting cofferdam is composed of a first supporting cofferdam layer and a second supporting cofferdam layer which are overlapped up and down. The first supporting cofferdam layer is in contact with the transparent cover plate. The second supporting cofferdam layer is in contact with the image sensing chip. A plurality of V-shaped continuous notches are formed in the inner side face of the second supporting cofferdam layer. Arc notches are formed in the four corners of the second supporting cofferdam layer respectively. The metal conductive pattern layer is formed by sequentially overlapping a titanium layer, a copper layer, a nickel layer and a palladium layer. The titanium layer and the passivating layer are in contact. The semiconductor device relieves stress, is exposed in the environment, and can not be easily oxidized and corroded, stress deformation of metal on the two sides of the blind hole under the cold and hot environments is effectively buffered, the response time of the semiconductor device is shortened, and the requirement that the metal layer continuously covers the inner wall of the deep hole with a high aspect ratio is met.
Owner:苏州科阳半导体有限公司

Water-based paint for anticorrosion treatment of copper pipes of two devices of air conditioner and preparation method of water-based paint

The invention provides a water-based paint for anticorrosion treatment of copper pipes of two devices of an air conditioner. The paint, including 100 parts wholly, comprises the following components in parts by weight: 15-30 parts of water-based epoxy modified acrylic resin, 0.2-0.5 part of organic amine, 8-15 parts of a low-temperature baking curing agent, 1-6 parts of an adhesion promoter, 0.05-0.5 part of a wetting agent, 0.05-0.5 part of a flatting agent and the balance of water, wherein the water-based epoxy modified acrylic resin is prepared from the following components in parts by weight: 50 to 70 parts of water-soluble acrylic resin, 5 to 15 parts of epoxy resin, 3 to 5 parts of acrylic acid, 2 to 5 parts of phosphorus-containing monomer, 0.2 to 0.5 part of peroxide initiator, 2 to 5 parts of ethylene glycol butyl ether and 1 to 3 parts of isoparaffin solvent. The anticorrosive treatment water-based paint for the copper pipes of the two devices of the air conditioner is good in wetting and leveling effect on the surfaces of the copper pipes, good in adhesion performance and good in anticorrosive effect. The invention also provides a preparation method of the water-based paint for the anticorrosion treatment of the copper pipes of the two devices of the air conditioner.
Owner:韶关瑞和环保科技有限公司

Multilayer phase-change film for ultrahigh density probe storage and preparation method thereof

The invention discloses a multilayer phase-change film for ultrahigh density probe storage and a preparation method thereof. The multilayer phase-change film has a top layer which is a diamond-like carbon film protective layer having the thickness of 8 to 12nm, a bottom layer which is a copper-tungsten alloy film electrode layer having the thickness of 10 to 15nm and a copper-tungsten weight ratio of 15: 85, and a middle layer which is a tellurium-based alloy film phase-change layer having the thickness of 25 to 45nm. The preparation method is characterized in that 1, an electrode layer and a phase-change layer are prepared by direct current-radio frequency magnetron sputtering integrated equipment; 2, a rotating disk is rotated so that a substrate is located right above a target material; a vacuum chamber is subjected to a vacuum-pumping process and argon is fed into the vacuum chamber; after sputtering, a vacuum-pumping process is carried out again; a heating resistor is started and a heating process is carried out; and after the heating process, an in-situ annealing process is carried out; and 3, the substrate sputtered with the electrode layer and the phase-change layer is taken out and then is put into a plasma-enhanced chemical vapor deposition chamber; methane and borane are put into the plasma-enhanced chemical vapor deposition chamber and a vapor deposition process is carried out; and after the growth of a diamond-like carbon film is finished, the diamond-like carbon film is taken out, then is put into an annealing furnace having a temperature of 180 DEG C and is annealed. The preparation method can effectively prevent conducting layer oxidation, improves surface quality, storage density, a storage life and power consumption of a multilayer nanoscale film, and improves preparation efficiency.
Owner:JIANGSU UNIV

Preparation method of anti-corrosion rare earth permanent magnet material

The invention relates to the technical field of preparation of rare earth permanent magnet materials, in particular to a preparation method of an anti-corrosion rare earth permanent magnet material. According to the preparation method, after alkalization of a sodium borohydride solution, the sodium borohydride solution is mixed with a ferrous sulfate solution, and nanometer iron powder is obtainedafter treating and is dispersed in cyclohexane; the alkalized sodium borohydride solution is added in; iron/cobalt nanometer powder of a core-shell structure is obtained through treating; the nanometer NdFeB powder and the nanometer iron powder are mixed according to proportion, and dispersion media and surface active substances are added in; magnetic powder slurry is obtained through ball-milling; the magnetic powder slurry is treated, and hard magnetic powder is obtained; after the magnetic powder slurry is mixed with the iron/cobalt nanometer powder of the core-shell structure, treating isperformed, and the rare earth permanent magnet material is obtained; under the high temperature work condition, the iron powder can be protected against oxidization by cobalt, the anti-corrosion performance of the permanent magnet material is improved; under the high temperature work condition, the expanding coefficient of the NdFeB powder is small, the saturation magnetic flux density is improved, the Curie temperature of the NdFeB powder is increased, and therefore the work temperature of the rare earth permanent magnet material rises, and the application prospects are wide.
Owner:NANTONG CHENGTAI MAGNETIC MATERIAL TECH CO LTD

A kind of preparation method of bczt-based lead-free piezoelectric ceramics

The invention relates to the technical field of preparation of electronic components, in particular to a preparation method of BCZT-based lead-free piezoelectric ceramics. In the present invention, citric acid is dissolved in ethylene glycol, and butyl titanate diluted with absolute ethanol is added to obtain a composite solution, and barium acetate solution, calcium nitrate solution and zirconium nitrate solution are added dropwise to the composite solution and mixed to obtain BCZT-based polymerization The material precursor is mixed with nano-NdFeB powder and nano-iron powder to obtain a magnetic powder slurry, and the hard magnetic powder is mixed with iron / cobalt nano-powder with a core-shell structure and then dispersed at a high speed. Electric ceramics, dense cobalt powder particles, can protect iron powder from oxidation, tetrabutyl titanate reacts with citric acid to form a network structure, zirconium perbarium calcium titanate-based material does not contain Pb, and has little harm to human body and environment. Elemental cobalt will soften at high temperature, which will enhance the bonding force of magnetic materials and reduce the thermal conductivity of magnetic materials. It can work stably in high temperature environments and has broad application prospects.
Owner:景德镇市鑫惠康电子有限责任公司

Production process of diatom formaldehyde-removing environment-friendly plate

The invention discloses a production process of a diatom formaldehyde-removing environment-friendly board, and relates to the field of diatom formaldehyde-removing environment-friendly boards, the diatom formaldehyde-removing environment-friendly board comprises an upper-layer board, a diatomite board and a lower-layer board which are arranged from top to bottom, and the production process of the diatom formaldehyde-removing environment-friendly board comprises the following steps of S1, raw material preparation, S2, surface processing, and S3, surface treatment. The method comprises the following steps of S1, primary slotting machining, S4, hot pressing and fixing, S5, secondary slotting machining and S6, follow-up treatment. When the upper-layer wood board or the lower-layer wood board is attached to the position, located on one side of the cutting frame body, of the surface of the second pressing plate, the upper-layer wood board and the lower-layer wood board can be pushed to move along the surface of the second pressing plate through a pushing mechanism, and therefore an upper deformation groove and a lower deformation groove are formed in the surface of the upper-layer wood board and the surface of the lower-layer wood board correspondingly.
Owner:山东福茂装饰材料有限公司

Multilayer phase-change film for ultrahigh density probe storage and preparation method thereof

The invention discloses a multilayer phase-change film for ultrahigh density probe storage and a preparation method thereof. The multilayer phase-change film has a top layer which is a diamond-like carbon film protective layer having the thickness of 8 to 12nm, a bottom layer which is a copper-tungsten alloy film electrode layer having the thickness of 10 to 15nm and a copper-tungsten weight ratio of 15: 85, and a middle layer which is a tellurium-based alloy film phase-change layer having the thickness of 25 to 45nm. The preparation method is characterized in that 1, an electrode layer and a phase-change layer are prepared by direct current-radio frequency magnetron sputtering integrated equipment; 2, a rotating disk is rotated so that a substrate is located right above a target material; a vacuum chamber is subjected to a vacuum-pumping process and argon is fed into the vacuum chamber; after sputtering, a vacuum-pumping process is carried out again; a heating resistor is started and a heating process is carried out; and after the heating process, an in-situ annealing process is carried out; and 3, the substrate sputtered with the electrode layer and the phase-change layer is taken out and then is put into a plasma-enhanced chemical vapor deposition chamber; methane and borane are put into the plasma-enhanced chemical vapor deposition chamber and a vapor deposition process is carried out; and after the growth of a diamond-like carbon film is finished, the diamond-like carbon film is taken out, then is put into an annealing furnace having a temperature of 180 DEG C and is annealed. The preparation method can effectively prevent conducting layer oxidation, improves surface quality, storage density, a storage life and power consumption of a multilayer nanoscale film, and improves preparation efficiency.
Owner:JIANGSU UNIV
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