Multilayer phase-change film for ultrahigh density probe storage and preparation method thereof

Abstract

The invention discloses a multilayer phase-change film for ultrahigh density probe storage and a preparation method thereof. The multilayer phase-change film has a top layer which is a diamond-like carbon film protective layer having the thickness of 8 to 12nm, a bottom layer which is a copper-tungsten alloy film electrode layer having the thickness of 10 to 15nm and a copper-tungsten weight ratio of 15: 85, and a middle layer which is a tellurium-based alloy film phase-change layer having the thickness of 25 to 45nm. The preparation method is characterized in that 1, an electrode layer and a phase-change layer are prepared by direct current-radio frequency magnetron sputtering integrated equipment; 2, a rotating disk is rotated so that a substrate is located right above a target material; a vacuum chamber is subjected to a vacuum-pumping process and argon is fed into the vacuum chamber; after sputtering, a vacuum-pumping process is carried out again; a heating resistor is started and a heating process is carried out; and after the heating process, an in-situ annealing process is carried out; and 3, the substrate sputtered with the electrode layer and the phase-change layer is taken out and then is put into a plasma-enhanced chemical vapor deposition chamber; methane and borane are put into the plasma-enhanced chemical vapor deposition chamber and a vapor deposition process is carried out; and after the growth of a diamond-like carbon film is finished, the diamond-like carbon film is taken out, then is put into an annealing furnace having a temperature of 180 DEG C and is annealed. The preparation method can effectively prevent conducting layer oxidation, improves surface quality, storage density, a storage life and power consumption of a multilayer nanoscale film, and improves preparation efficiency.

Description

technical field [0001] The present invention relates to a multi-layer phase-change film for ultra-high-density probe storage and a preparation method thereof, more precisely a multi-layer nano-film with a chalcogenide glass phase-change material as the core and a preparation method thereof, belonging to The field of nano film materials. Background technique [0002] In the information age, with the popularization of computer technology, the rapid development of the Internet, and the emergence of high-definition video, all kinds of information are increasing explosively. People are eager to have data with higher storage density, larger storage capacity, and faster access speed. Storage appears. The size of the information point used to store data is the most direct factor affecting the storage density, so if a data information bit can be recorded with several atoms, the data storage density will reach 1TB / in 2 (1TB=1024GB), realizing ultra-high density data storage. Since ...

AI Technical Summary

Problems solved by technology

exist figure 1 Among them, platinum (Pt) metal is used as the electrode layer 3, which is expensive and not suitable for mass applications; more importantly, the data storage, erasing, and reading processes in this scheme all use the probe tip It is realized directly on the film surface of the phase change layer 2. The phase change material is directly exposed to the air and is easily oxidized, and the needle tip is in direct contact with the film surface during the scanning process, causing wear and tear on the needle tip and the film, which not only seriously affects the probe and The life of the storage medium will also greatly reduce the storage density due to the increase in diameter of the needle tip after wear

figure 1 When the structure shown is prepared, the electrode layer 3 and the phase change layer 2 are prepared in different magnetron sputtering stations (PVD), and the defects are: the roughness of the obtained film is relatively high, and the formed nanoparticles are relatively large , leading to a reduction in storage density; and during the preparation process, the sample is transferred from one sputtering station to another, which is easy to oxidize and affects the electrical conductivity

Images