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Preparation method of transparent conductive thin film with grating structure

A technology of transparent conductive film and grating structure, applied to the conductive layer on the insulating carrier, ion implantation plating, coating, etc., can solve the problems of long preparation time period, uneven product shape and size, complicated operation process, etc. , to achieve the effects of reducing environmental pollution and personal safety hazards, short sample preparation time, and simple process operation

Active Publication Date: 2014-08-20
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the complicated preparation process of these methods, the long preparation time period required, and the addition of toxic and harmful chemical reagents in some cases, a series of problems such as complex operation process, low preparation efficiency, and easy pollution to the environment have been brought about.
In addition, the controllability is not easy to guarantee when using these methods to prepare transparent conductive film structures, and the shape and size of the obtained products are not uniform

Method used

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  • Preparation method of transparent conductive thin film with grating structure
  • Preparation method of transparent conductive thin film with grating structure
  • Preparation method of transparent conductive thin film with grating structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Preparation of Ag / FTO transparent conductive film: directly use commercially available FTO glass (thickness 750 nm, average transmittance 80%, sheet resistance 8.5 Ω / sq) as the substrate, use the method of cleaning the glass substrate, wash and dry, and then use The Ag layer was sputtered by a high-vacuum DC magnetron sputtering device (the purity of the Ag target is 99.99%), the sputtering current was 60 mA, the sputtering time was 3 seconds, and the sputtering gas was argon, and metal Ag was deposited on the FTO glass substrate On the film, obtain the Ag / FTO transparent conductive film for subsequent use.

[0019] The Ag / FTO transparent conductive film grating structure is to scan the Ag / FTO transparent conductive film with a nanosecond laser with a pulse width of 1-2 ns, a wavelength of 532 nm, and a repetition rate of 1 kHz. The method is as follows: adjust the position of the sample stage so that the surface of the Ag / FTO transparent conductive film is located 2.5 ...

Embodiment 2

[0021] Preparation of Pt / FTO transparent conductive film: directly use commercially available FTO glass (thickness about 750 nm, average transmittance 80%, sheet resistance 8.5 Ω / sq) as the substrate, use the method of cleaning the glass substrate, after cleaning and drying, and then The Pt layer was sputtered by a high-vacuum DC magnetron sputtering apparatus (the purity of the Pt target was 99.99%), the sputtering current was 60 mA, the sputtering time was 4 seconds, and the sputtering gas was argon. Deposit the metal Pt layer on the FTO glass base film.

[0022] The Pt / FTO transparent conductive film grating structure is to scan the Pt / FTO transparent conductive film with a nanosecond laser with a pulse width of 1-2 ns, a wavelength of 532 nm, and a repetition rate of 1 KHz. The method is as follows: adjust the position of the sample stage so that the surface of the Pt / FTO transparent conductive film is located 2.5 mm behind the laser focus; control the laser energy density...

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Abstract

The invention discloses a preparation method of a transparent conductive thin film with a grating structure. The method comprises the steps of adopting a pulse laser of which the pulse width is less than 20ns, and the wavelength is 400-1000 nanometers, ensuring that a laser beam emitted from the pulse laser is positioned with a distance of 0-2.55 millimeter above an M layer of an M / TCO glass transparent conductive thin film after passing through a focus formed by lens focusing, controlling the laser energy to be 0.70-1.30J / cm<2>, and controlling the scanning speed to be 5-20mm / s; performing one-way line-by-line scanning on the laser beam, controlling the scanning line overlapping rate to be 50-70%, and performing laser irradiation treatment on the surface of the M / TCO thin film, so that crystals on the surface of the conductive thin film are subjected to re-crystallization, and a regular grating structure is induced on the surface. The preparation method is simple in process operation, short in preparation time and good in controllability, does not need to introduce harsh environmental conditions such as special gas or liquid medium and the like, and improves the light transmittance of the thin film.

Description

technical field [0001] The invention relates to the field of laser micro-nano processing technology and semiconductor materials, in particular to a method for preparing a micro-nano grating structure on the surface of a transparent conductive film (M / TCO film). Background technique [0002] Transparent conductive oxide (TCO) film is a film with high conductivity, high light transmittance in the visible light range and high reflectivity in the infrared light range. The most widely used films include ZnO, In 2 o 3 , SnO 2 Films prepared from film materials of its doping system (such as AZO, ITO, FTO). With the development of the field of solar cells, the photoelectric properties of these traditional transparent conductive film materials are far from meeting the needs. At present, there are new material films or the preparation of multilayer composite transparent conductive films, or the preparation of micro-nano films on the surface of the film. Structure and other technolo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35H01B5/14
Inventor 任乃飞黄立静李保家周明
Owner JIANGSU UNIV
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