Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as undetermined process methods, achieve the effects of reducing equipment investment, increasing manufacturing costs, and saving costs

Inactive Publication Date: 2014-08-20
ALTUSVIA ENERGY TAICANG
View PDF2 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although the cell structure was proposed by the University of New South Wales in Australia as early as the 1990s and obtained

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0039] Example 1:

[0040] A manufacturing method of mass-produced PERL crystalline silicon solar cell includes the following steps:

[0041] (1) De-damage, texturing and cleaning of silicon wafer:

[0042] Choose 156mm P-type monocrystalline silicon wafer as the base material, its resistivity is 1 ohm·cm, after de-damaging the selected p-type silicon wafer, use 0.5% sodium hydroxide or potassium hydroxide solution at 75℃ Chemically etch the surface of the P-type silicon wafer to prepare a pyramid-shaped suede, and then wash it with 1% hydrofluoric acid to remove impurities;

[0043] (2) Phosphorus diffusion: the tube-type phosphorus diffusion method is used, specifically in the diffusion furnace at a temperature of 600 ℃, using POCl 3 Phosphorus diffusion is performed on the front surface of the silicon wafer to form an n-type layer, so that the P-type crystalline silicon square resistance is 25 ohm / sq. The phosphosilicate glass naturally formed after diffusion is used as a mask for ...

Example Embodiment

[0055] Example 2:

[0056] A manufacturing method of mass-produced PERL crystalline silicon solar cell includes the following steps:

[0057] (1) De-damage, texturing and cleaning of silicon wafer:

[0058] Select 156mm P-type monocrystalline silicon wafer as the base material, and its resistivity is 2 ohm·cm. After de-damaging the selected p-type silicon wafer, use 1% sodium hydroxide or potassium hydroxide solution at 80℃ Chemically etch the surface of the P-type silicon wafer to prepare a pyramid-shaped suede, and then clean it with 5% hydrofluoric acid to remove impurities;

[0059] (2) Phosphorus diffusion: the tube-type phosphorus diffusion method is used, specifically in the diffusion furnace at a temperature of 750 ℃, using POCl 3 Phosphorus diffusion is performed on the front surface of the silicon wafer to form an n-type layer, so that the P-type crystalline silicon square resistance is 100 ohm / sq. The phosphosilicate glass naturally formed after diffusion is used as a mask ...

Example Embodiment

[0071] Example 3:

[0072] A manufacturing method of mass-produced PERL crystalline silicon solar cell includes the following steps:

[0073] (1) De-damage, texturing and cleaning of silicon wafer:

[0074] Select 156mm P-type monocrystalline silicon wafer as the base material, its resistivity is 3 ohm·cm, after de-damaging the selected p-type silicon wafer, use 2% sodium hydroxide or potassium hydroxide solution at 85℃ Chemically etch the surface of the P-type silicon wafer to prepare a pyramid-shaped suede, which is then cleaned with 15% hydrofluoric acid to remove impurities;

[0075] (2) Phosphorus diffusion: the tube-type phosphorus diffusion method is used, specifically in the diffusion furnace at a temperature of 800 ℃, using POCl 3 Phosphorus diffusion is performed on the front surface of the silicon wafer to form an n-type layer, so that the P-type crystalline silicon square resistance is 150 ohm / sq, and the phosphosilicate glass naturally formed after diffusion is used as a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Square resistanceaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a manufacturing method for a PERL crystalline silicon solar cell capable of being massively produced. The method comprises the steps of removing damage of a silicon wafer and making herbs into wool, cleaning the silicon wafer, conducting phosphorus diffusion, removing phosphorosilicate glass on the back face, polishing the back face, removing and cleaning the phosphorosilicate glass, conducting back face aluminum oxide/silicon nitride laminated thin film growth, conducting front face silicon nitride anti-reflection thin film growth, printing type-p dopant on the back face, conducting drying, adopting laser to conduct local area heavy doping on the type-p dopant printing area of the back face, conducting ultrasonic cleaning, printing a back electrode and an aluminum back field on the back face, printing sliver grid lines on the front face, and conducting sintering and testing. According to the manufacturing method for the PERL crystalline silicon solar cell capable of being massively produced, the steps are simple, and operation is easy. The manufacturing method has the advantages that on the basis of business-like industrial equipment, existing conventional cell production equipment of an enterprise production line at present is fully utilized, the equipment investment is fully reduced, and the manufacturing cost of the cell per watt is not increased.

Description

technical field [0001] The invention belongs to the field of crystalline silicon solar cell manufacturing, and relates to a back field passivation of a crystalline silicon solar cell and local doping of a metallized region to form a local back field technology, in particular to a mass-producible PERL crystalline silicon solar cell production method. Background technique [0002] Against the backdrop of increasingly prominent problems such as energy scarcity, resource shortage, and environmental pollution, the use of natural resources for solar power generation has been regarded as a countermeasure to solve the problems of global warming and fossil fuel depletion, and has been favored by countries all over the world. However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manufacturers. [0003] The in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCH01L31/02168H01L31/022441H01L31/1804Y02E10/547Y02P70/50
Inventor 夏正月高艳涛崔会英钱亮何锐陈同银刘仁中董经兵张雪谢烜张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap