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Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as undetermined process methods, achieve the effects of reducing equipment investment, increasing manufacturing costs, and saving costs

Inactive Publication Date: 2014-08-20
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Although the cell structure was proposed by the University of New South Wales in Australia as early as the 1990s and obtained the world record of 25% crystalline silicon solar cells, a process method suitable for industrial production has not been determined.

Method used

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  • Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced

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Effect test

Embodiment 1

[0040] A kind of manufacturing method of the PERL crystalline silicon solar cell of mass production, comprises the following steps:

[0041] (1) Silicon wafers are damaged, textured and cleaned:

[0042] A 156mm P-type single crystal silicon wafer is selected as the base material, and its resistivity is 1 ohm cm. After removing damage to the selected p-type silicon wafer, use 0.5% sodium hydroxide or potassium hydroxide solution at 75°C Perform chemical etching on the surface of the P-type silicon wafer to prepare a pyramid-shaped suede surface, and then clean it with 1% hydrofluoric acid to remove impurities;

[0043] (2) Phosphorus diffusion: adopt the method of tubular phosphorus diffusion, specifically in the diffusion furnace at a temperature of 600 ° C, using POCl 3 Phosphorus is diffused on the front side of the silicon wafer to form an n-type layer, so that the square resistance of P-type crystalline silicon is 25ohm / sq, and the naturally formed phosphosilicate glass ...

Embodiment 2

[0056] A kind of manufacturing method of the PERL crystalline silicon solar cell of mass production, comprises the following steps:

[0057] (1) Silicon wafers are damaged, textured and cleaned:

[0058] Select a 156mm P-type single crystal silicon wafer as the base material, and its resistivity is 2 ohm·cm. After removing the damage of the selected p-type silicon wafer, use 1% sodium hydroxide or potassium hydroxide solution at 80°C Perform chemical etching on the surface of the P-type silicon wafer to prepare a pyramid-shaped suede surface, and then clean it with hydrofluoric acid with a mass fraction of 5% to remove impurities;

[0059] (2) Phosphorus diffusion: adopt the method of tubular phosphorus diffusion, specifically in the diffusion furnace at a temperature of 750 ° C, using POCl 3 Phosphorus is diffused on the front side of the silicon wafer to form an n-type layer, so that the square resistance of P-type crystalline silicon is 100ohm / sq, and the naturally formed ...

Embodiment 3

[0072] A kind of manufacturing method of the PERL crystalline silicon solar cell of mass production, comprises the following steps:

[0073] (1) Silicon wafers are damaged, textured and cleaned:

[0074] A 156mm P-type single crystal silicon wafer is selected as the base material, and its resistivity is 3 ohm cm. After removing damage to the selected p-type silicon wafer, use 2% sodium hydroxide or potassium hydroxide solution at 85°C Perform chemical etching on the surface of the P-type silicon wafer to prepare a pyramid-shaped suede surface, and then clean it with 15% hydrofluoric acid to remove impurities;

[0075] (2) Phosphorus diffusion: adopt the method of tubular phosphorus diffusion, specifically in the diffusion furnace at a temperature of 800 ° C, using POCl 3 Phosphorus is diffused on the front side of the silicon wafer to form an n-type layer, so that the square resistance of P-type crystalline silicon is 150ohm / sq, and the naturally formed phosphosilicate glass ...

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Abstract

The invention provides a manufacturing method for a PERL crystalline silicon solar cell capable of being massively produced. The method comprises the steps of removing damage of a silicon wafer and making herbs into wool, cleaning the silicon wafer, conducting phosphorus diffusion, removing phosphorosilicate glass on the back face, polishing the back face, removing and cleaning the phosphorosilicate glass, conducting back face aluminum oxide / silicon nitride laminated thin film growth, conducting front face silicon nitride anti-reflection thin film growth, printing type-p dopant on the back face, conducting drying, adopting laser to conduct local area heavy doping on the type-p dopant printing area of the back face, conducting ultrasonic cleaning, printing a back electrode and an aluminum back field on the back face, printing sliver grid lines on the front face, and conducting sintering and testing. According to the manufacturing method for the PERL crystalline silicon solar cell capable of being massively produced, the steps are simple, and operation is easy. The manufacturing method has the advantages that on the basis of business-like industrial equipment, existing conventional cell production equipment of an enterprise production line at present is fully utilized, the equipment investment is fully reduced, and the manufacturing cost of the cell per watt is not increased.

Description

technical field [0001] The invention belongs to the field of crystalline silicon solar cell manufacturing, and relates to a back field passivation of a crystalline silicon solar cell and local doping of a metallized region to form a local back field technology, in particular to a mass-producible PERL crystalline silicon solar cell production method. Background technique [0002] Against the backdrop of increasingly prominent problems such as energy scarcity, resource shortage, and environmental pollution, the use of natural resources for solar power generation has been regarded as a countermeasure to solve the problems of global warming and fossil fuel depletion, and has been favored by countries all over the world. However, the high production cost restricts its application range, and with the sharp reduction of government subsidies, reducing the production cost of cells and improving power generation efficiency has become an urgent issue for manufacturers. [0003] The in...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/02168H01L31/022441H01L31/1804Y02E10/547Y02P70/50
Inventor 夏正月高艳涛崔会英钱亮何锐陈同银刘仁中董经兵张雪谢烜张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
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