Preparation method of nanoimprint nickel seal

A technology of nano-imprinting and stamping, which is applied in nano-technology, photo-engraving process of patterned surface, originals for opto-mechanical processing, etc. , to achieve the effect of low price

Inactive Publication Date: 2014-10-01
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Hard templates are often produced by electron beam lithography, but the method is time-consuming and expensive, and is not suitable for mass production. The materials used are often silicon or quartz, which are too brittle to be used repeatedly
[0003] The anodized aluminum template has a highly ordered pore array, and the pore diameter and pore spacing are adjustable, but it is brittle. It is very important to use a highly ordered anodized aluminum template to prepare a hard template for imprinting with high toughness and hardness.

Method used

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  • Preparation method of nanoimprint nickel seal
  • Preparation method of nanoimprint nickel seal
  • Preparation method of nanoimprint nickel seal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The aluminum material is degreased, surface cleaned, and polished using conventional methods; in a 5% (mass percent) phosphoric acid electrolyte, the aluminum material is used as the anode and the graphite is the cathode, and the aluminum material is subjected to constant-voltage anodic oxidation by a voltage source. 0°C, a voltage of 200V, and a time of 10 hours to obtain an anodic aluminum oxide film with a thickness of 60 microns; in phosphoric acid (H 3 PO 4 ) and 30g / L of chromium trioxide (CrO 3 ) in the mixed solution of chemical corrosion to completely remove the anodic aluminum oxide film at a temperature of 70°C; carry out constant voltage anodic oxidation on the aluminum material after removing the aluminum oxide film at a temperature of 0°C and a voltage of 200V for 5 minutes to obtain Thickness is the anodic aluminum oxide film of 300 nanometers, and in 5% (mass percent) phosphoric acid, 30 ℃ down hole expansion 40 minutes, obtain the anodic aluminum oxide...

Embodiment 2

[0044] The aluminum material is degreased, surface cleaned, and polished using conventional methods; the aluminum material is subjected to constant voltage anodization in a 10% (mass percentage) phosphoric acid electrolyte, the temperature is 10°C, the voltage is 150V, and the time is 6 hours. Obtain the anodic aluminum oxide film that thickness is 10 microns; Be that the phosphoric acid (H of 50mL / L 3 PO 4 ) and 30g / L of chromium trioxide (CrO 3 ) in the mixed solution of chemical corrosion to completely remove the anodic aluminum oxide film at a temperature of 70°C; carry out constant voltage anodic oxidation on the aluminum material after the aluminum oxide film has been removed at a temperature of 10°C and a voltage of 150V for 5 minutes, and then In 5% (mass percentage) phosphoric acid, 30 ℃ under expansion hole 10 minutes; Repeat anodic oxidation, chemical corrosion, hole expansion process 4 times, obtain the anodized aluminum film with the tapered hole that thickness i...

Embodiment 3

[0046] The aluminum material is degreased, surface cleaned, and polished using conventional methods; in a 1% (mass percentage) phosphoric acid electrolyte, the aluminum material is used as the anode and the graphite is the cathode, and the aluminum material is subjected to constant voltage anodic oxidation by a voltage source. 0°C, a voltage of 100V, and a time of 10 hours to obtain an anodic aluminum oxide film; in phosphoric acid (H 3 PO 4 ) and 30g / L of chromium trioxide (CrO 3 ) in the mixed solution of chemical corrosion to completely remove the anodic aluminum oxide film at a temperature of 70°C; carry out constant voltage anodic oxidation on the aluminum material after the removal of the aluminum oxide film at a temperature of 0°C and a voltage of 100V for 20 minutes to obtain Anodized aluminum film, and in 30% (mass percentage) phosphoric acid 0 ℃ down hole expansion 40 minutes, obtain the anodized aluminum film with conical hole; Make the anodized aluminum film obtai...

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Abstract

The invention discloses a preparation method of a nanoimprint nickel seal. The method comprises the following steps: performing multi-step constant-pressure anodic oxidation on the aluminum material to generate an anodic oxidizing aluminum film with tapered pores; then chemically plating the anodic oxidizing aluminum film to enable the film to gain the conductivity; and finally electroforming to obtain the nickel seal with an ordered pattern. According to the preparation method, the prepared nickel seal has the advantage that the nanometer nickel array is ordered in height and has adjustable shape and length; and the prepared nickel seal can be applied to the preparation of an ordered anodic oxidizing aluminum film, a biological chip, a nanometer electronic devices and the like.

Description

technical field [0001] The invention relates to nano-imprinting technology, in particular to a preparation method of nano-imprinted nickel stamp. Background technique [0002] With the rapid development of semiconductor technology, more and more devices have developed to the nanometer scale. Conventional semiconductor lithography technology has been greatly challenged due to the limitation of the diffraction limit. It is imminent to develop effective and convenient nano-pattern fabrication methods. . Photolithography technologies such as focused ion beam lithography, electron beam lithography, and X-ray lithography are expensive and not suitable for making large-area graphics; soft imprinting technology also has certain problems in the preparation of large-area patterns, such as It is difficult to perfectly bond between the mold and the substrate during embossing, and the graphics transfer efficiency is very low, such as patent 200710099102.3. Hard imprinting technology ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/04C25D1/10G03F1/80B82Y40/00
Inventor 胡星范忠辉凌志远王凯
Owner SOUTH CHINA UNIV OF TECH
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