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A kind of ultra-low dielectric constant thin film based on btem precursor and preparation method thereof

An ultra-low dielectric constant and precursor technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as increased dielectric constant, and achieve the effect of smooth surface, excellent mechanical properties, and easy operation

Inactive Publication Date: 2017-02-15
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the reduction of C content easily leads to the increase of dielectric constant, so it is very important to find the balance between shrinkage and dielectric constant.

Method used

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  • A kind of ultra-low dielectric constant thin film based on btem precursor and preparation method thereof
  • A kind of ultra-low dielectric constant thin film based on btem precursor and preparation method thereof
  • A kind of ultra-low dielectric constant thin film based on btem precursor and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0031] (1) Convert BTEM 、 Stir the mixture of P123, hydrochloric acid, ethanol and water evenly, and stir for 2 hours in an oil bath at 60°C. The molar ratio of the above substances is: BTEM:P123:HCl:H 2 O:EtOH=0.5:1.2×10 -2 : 1.80×10 -2 :20:13.9.

[0032] (2) Spin-coat the film-forming solution prepared above on a clean silicon wafer at 25°C to form a film. The process of spin coating is divided into three steps: spinning at 800 rpm for 10 seconds; spinning at 3000 rpm for 30 seconds; spinning at 1000 rpm for 10 seconds.

[0033] (3) The above film was placed in an oven and aged in an environment of 60° C. for 70 hours.

[0034] (4) Put the aged film into an annealing furnace, blow nitrogen gas, slowly raise from room temperature to 350°C, keep it for 3 hours, and then slowly lower to room temperature. In order to further study the performance of the above thin film after high temperature heat treatment, annealing treatment can be continued at high temperature. For exam...

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Abstract

The invention belongs to the technical field of very large scale integrated circuit manufacturing and particularly relates to an ultra-low-permittivity film based on a BTEM precursor and a manufacturing method of the ultra-low-permittivity film. By using 1,2-bis (triethoxysilyl) methane as a precursor, by adding a surface active agent, namely, ethylene oxide-polypropylene oxide-polyethylene oxide tri-block copolymer, hydrochloric acid, ethyl alcohol and de-ionized water, a sol solution is prepared; afterwards, by adopting a spin-coating technology and post-annealing treatment, the ultra-low-permittivity film good in performance is obtained, wherein the permittivity value (k) of the film ranges from 1.8-2.0, the leakage current density of the film is in 10-10-10-9 A / cm2 magnitude under the electric field intensity of 0.5 MV / cm, the Young modulus of the film is 8 GPa-20 GPa, and the hardness ranges from 0.8 GPa-1.5 GPa.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuit manufacturing, and in particular relates to an ultra-low dielectric constant film material and a preparation method thereof. Background technique [0002] Since the scale of the integrated circuit is continuously expanding, the feature size is also reduced accordingly, resulting in a sharp increase of the RC delay of the interconnection of the integrated circuit, thereby restricting the improvement of the performance of the integrated circuit. In order to reduce the RC delay, it is necessary to use low-resistivity copper wires to replace traditional aluminum wires, and to use low dielectric constant (low-k) interconnection media instead of traditional SiO 2 Medium (k ≈ 3.9). According to the International Technology Roadmap for Semiconductors (ITRS) [1] , when the integrated circuit enters the 45 / 32 nm technology node, the k value of the interconnection medium should...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/532
Inventor 丁士进丁子君蒋涛张卫
Owner FUDAN UNIV