Crystalline silicon solar cell antireflection film and preparation process thereof

Abstract

The invention provides a crystalline silicon solar cell antireflection film and a preparation process thereof. The total thickness of the antireflection film is 80-95nm and the refractive index of the antireflection film is 1.8-2.05; the antireflection film is composed of at least five layers of films, and the total number of layers is an odd number; the odd-number layers are silicon dioxide films having the refractive index of 1.4-1.7; the even-number layers are silicon nitride films, the silicon nitride film located at the second layer of the antireflection film has the maximum refractive index which ranges from 2.15 to 2.25, and the refractive index of the silicon nitride film of each next layer is 0.05-0.25 lower than that of the silicon nitride film of the prior layer; the thickness of each layer of film is set according to the total thickness of the antireflection film and the total number of layers, and each silicon dioxide film is 5-50nm thick, while each silicon nitride film is 5-50nm thick. The crystalline silicon solar cell antireflection film has excellent compactness and anti-PID attenuation property, and is capable of obviously reducing the refractive index of the solar cell and improving the photoelectric conversion efficiency of the solar cell.

Description

Technical field [0001] The present invention involves a reflective membrane and its preparation process, especially the reducing film and its preparation process that involves a crystalline silicon solar cell. Background technique [0002] Studies in recent years have shown that the high voltage between the circuit in the crystal silicon photovoltaic component and the ground metal frame will cause continuous decay of component photovoltaic performance. The industry is called potential induction attenuation (referred to as PID effect).The PID effect makes the battery surface passivation effect worsening the packaging surface of the component, forming a higher current leakage circuit, which reduces the battery filling factor, opening voltage, and short -circuit current.The PID effect can reduce the power of the component by more than 30%.Therefore, how to solve the PID problem has become a very important link in the solar battery manufacturing process. [0003] The traditional anti...

AI Technical Summary

Problems solved by technology

The above improvement method solves the disadvantages of the silicon film grown by the traditional coating method to a certain extent, but this method can only improve the properties of the innermost layer or the innermost layer and the outermost layer of the film layer, and the properties of the middle layers remain unchanged. , the defects of the traditional method of growing silicon film still exist, and the effect of improving the quality of the film layer is limited

The total refractive index of the coating is still significantly greater than 2.05, and the anti-reflection effect of the component is limited

In addition, there are no corresponding improvement measures for the influence of temperature changes in the coating process on the properties of each film layer.