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Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition

A chemical vapor deposition and single-layer graphene technology, which is applied in the field of two-dimensional thin film material preparation, can solve the problems that the graphene growth preparation technology is difficult to meet people's needs, and the potential is difficult to be exerted.

Inactive Publication Date: 2015-07-15
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The existing graphene growth preparation technology is difficult to meet people's needs, making it difficult to realize its huge potential

Method used

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  • Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition
  • Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition
  • Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] A method for growing a single-layer graphene film by low-temperature chemical vapor deposition, comprising the following steps (the flow chart of preparing graphene by chemical vapor deposition at low temperature is as follows figure 1 shown):

[0067] A nickel foil with a thickness of 25 μm was selected as the metal substrate, and the nickel foil was soaked in acetic acid, ethanol, and ultrapure aqueous solution with a volume ratio of 1:1:1 for 5 min, and then dried. Then the gallium ball whose mass fraction is 35.0% of the nickel foil is placed in the very center of the nickel foil.

[0068] Push the metal substrate into the reaction furnace, inject 300 sccm of hydrogen as a protective gas, and keep it at a constant temperature of 1000 degrees for 30 minutes to allow the two to react to form a uniform mixed-phase surface.

[0069] Put the metal substrate into the polishing solution, polish it at 5V for 30 seconds, turn off the power, and clean the metal substrate.

...

Embodiment 2

[0079] A method for growing single-layer graphene film by low-temperature chemical vapor deposition, comprising the following steps:

[0080] A cobalt foil with a thickness of 250 μm was selected as the metal substrate, and the cobalt foil was soaked in 1:1:1 acetic acid, ethanol, and ultrapure aqueous solution for 10 minutes, and then dried. Then place the indium ball whose mass fraction is 70.0% of the cobalt foil on the very center of the nickel foil.

[0081] The metal substrate is pushed into the reaction furnace, 500 sccm of argon gas is introduced as a protective gas, and the temperature is maintained at a constant temperature of 400 degrees for 120 minutes, so that the two react to form a uniform mixed phase surface.

[0082] Put the metal substrate in the polishing solution, polish it at 3V for 120 seconds, turn off the power, clean the metal substrate, and then perform mechanical polishing on it.

[0083] Put the metal substrate after the above treatment into the ce...

Embodiment 3

[0086] A method for growing single-layer graphene film by low-temperature chemical vapor deposition, comprising the following steps:

[0087] Select indium with a thickness of 50 μm as the metal substrate, soak the indium ball in acetic acid, ethanol, and ultrapure aqueous solution with a volume ratio of 1:1:1 for 10 minutes, and dry it. Then the gallium sphere whose mass fraction is 20.0% of the indium sphere is placed in the very center of the indium sphere.

[0088] Push the metal substrate into the reaction furnace, inject 600 sccm of argon as a protective gas, and keep it at a constant temperature of 500 degrees for 60 minutes to allow the two to react to form a uniform mixed-phase surface.

[0089] Put the metal substrate in the polishing solution, polish it at 3V for 120 seconds, turn off the power, and clean the metal substrate.

[0090] Put the above treated metal substrate into the center of the atmosphere tube furnace, pass hydrogen and nitrogen into the tube furna...

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Abstract

The invention discloses a method for growing a single-layer graphene thin film by virtue of low-temperature chemical vapor deposition, and belongs to the technical field of two-dimensional thin film material preparation. The preparation method comprises the following steps: (1) preparing an alloy substrate; (2) performing leveling treatment on the alloy substrate; (3) performing annealing treatment on the alloy substrate under a protective atmosphere; and (4) depositing graphene by using a chemical vapor deposition process, and cooling to room temperature to obtain the alloy substrate with a grown single-layer graphene thin film, wherein conditions of the chemical vapor deposition process are as follows: the temperature is 200-800 DEG C, the time is 5-180min, and a carbon source is a gas phase carbon source, a liquid phase carbon source or a solid phase carbon source. The method disclosed by the invention has the advantages that the method is simple, convenient and fast, also is low in cost, and ensures that uniform and single-layer high-quality graphene can be prepared at relatively low temperature; and the method has universality, is simple and mild in condition, uniform in product distribution and good in repeatability, is suitable for industrial production, and is particularly suitable for controllable preparation of single-layer or few-layer graphene.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional film material preparation, and relates to a method for growing a single-layer graphene film by low-temperature chemical vapor deposition. Background technique [0002] As a new type of carbon material, graphene has excellent electrical, thermal, optical properties and good structural flexibility. These excellent physical properties make graphene in supercapacitors, high-performance transistors, super-strong and high-conductivity composite materials, flexible Transparent electrodes, Li-ion batteries, and sensors show great application potential. [0003] In past studies, chemical vapor deposition (CVD) has been proven to be the most likely method for large-scale preparation of high-quality graphene. However, the growth temperature of this method is generally too high (usually higher than 1000 degrees Celsius), which greatly hinders the industrial production and preparation of graphene. ...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 陈林锋孔知之
Owner WUHAN UNIV
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