Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition

A chemical vapor deposition and single-layer graphene technology, which is applied in the field of two-dimensional thin film material preparation, can solve the problems that the graphene growth preparation technology is difficult to meet people's needs, and the potential is difficult to be exerted.

Inactive Publication Date: 2015-07-15
WUHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The existing graphene growth preparation technology is difficult

Method used

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  • Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition
  • Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition
  • Method for growing single-layer graphene thin film by virtue of low-temperature chemical vapor deposition

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0065] Example 1

[0066] A method for growing a single-layer graphene film by low-temperature chemical vapor deposition includes the following steps (the flow chart for preparing graphene by chemical vapor deposition at low temperature is as follows: figure 1 Shown):

[0067] A nickel foil with a thickness of 25 μm is selected as the metal substrate, and the nickel foil is immersed in a 1:1:1 volume ratio of acetic acid, ethanol, and ultrapure aqueous solution for 5 minutes, and then blown dry. Then a gallium ball with a mass fraction of 35.0% nickel foil is placed in the center of the nickel foil.

[0068] Push the metal substrate into the reaction furnace, pass 300 sccm of hydrogen as a protective gas, and keep it at a constant temperature of 1000 degrees for 30 minutes to allow the two to react to form a uniform mixed phase surface.

[0069] Put the metal substrate in the polishing solution and polish it at a voltage of 5V for 30 seconds, turn off the power, and clean the metal su...

Example Embodiment

[0078] Example 2

[0079] A method for growing a single-layer graphene film by low-temperature chemical vapor deposition includes the following steps:

[0080] A cobalt foil with a thickness of 250 μm is selected as the metal substrate, and the cobalt foil is immersed in a 1:1:1 acetic acid, ethanol, and ultrapure aqueous solution for 10 minutes, and dried. Then an indium ball with a mass fraction of 70.0% cobalt foil was placed in the center of the nickel foil.

[0081] Push the metal substrate into the reaction furnace, pass in 500 sccm of argon as a protective gas, and keep it at a constant temperature of 400 degrees for 120 minutes to allow the two to react to form a uniform mixed phase surface.

[0082] Put the metal substrate in the polishing liquid, polish for 120 seconds at a voltage of 3V, turn off the power, wash the metal substrate, and then perform mechanical polishing treatment on it.

[0083] Put the metal substrate after the above treatment in the center of the atmospher...

Example Embodiment

[0085] Example 3

[0086] A method for growing a single-layer graphene film by low-temperature chemical vapor deposition includes the following steps:

[0087] Indium with a thickness of 50 μm is selected as the metal substrate, and the indium balls are immersed in a 1:1:1 volume ratio of acetic acid, ethanol, and ultrapure aqueous solution for 10 minutes, and then blown dry. Then a gallium ball whose mass fraction is 20.0% of the indium ball is placed in the center of the indium ball.

[0088] Push the metal substrate into the reaction furnace, and pass 600 sccm of argon as a protective gas, and keep it at a constant temperature of 500 degrees for 60 minutes to allow the two to react to form a uniform mixed phase surface.

[0089] Put the metal substrate in the polishing liquid, polish for 120 seconds at a voltage of 3V, turn off the power, and wash the metal substrate clean.

[0090] The metal substrate after the above treatment is put into the center of the atmosphere tube furnace, ...

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Abstract

The invention discloses a method for growing a single-layer graphene thin film by virtue of low-temperature chemical vapor deposition, and belongs to the technical field of two-dimensional thin film material preparation. The preparation method comprises the following steps: (1) preparing an alloy substrate; (2) performing leveling treatment on the alloy substrate; (3) performing annealing treatment on the alloy substrate under a protective atmosphere; and (4) depositing graphene by using a chemical vapor deposition process, and cooling to room temperature to obtain the alloy substrate with a grown single-layer graphene thin film, wherein conditions of the chemical vapor deposition process are as follows: the temperature is 200-800 DEG C, the time is 5-180min, and a carbon source is a gas phase carbon source, a liquid phase carbon source or a solid phase carbon source. The method disclosed by the invention has the advantages that the method is simple, convenient and fast, also is low in cost, and ensures that uniform and single-layer high-quality graphene can be prepared at relatively low temperature; and the method has universality, is simple and mild in condition, uniform in product distribution and good in repeatability, is suitable for industrial production, and is particularly suitable for controllable preparation of single-layer or few-layer graphene.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional film material preparation, and relates to a method for growing a single-layer graphene film by low-temperature chemical vapor deposition. Background technique [0002] As a new type of carbon material, graphene has excellent electrical, thermal, optical properties and good structural flexibility. These excellent physical properties make graphene in supercapacitors, high-performance transistors, super-strong and high-conductivity composite materials, flexible Transparent electrodes, Li-ion batteries, and sensors show great application potential. [0003] In past studies, chemical vapor deposition (CVD) has been proven to be the most likely method for large-scale preparation of high-quality graphene. However, the growth temperature of this method is generally too high (usually higher than 1000 degrees Celsius), which greatly hinders the industrial production and preparation of graphene. ...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 陈林锋孔知之
Owner WUHAN UNIV
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