Copper/indium/gallium rotating target and method for preparing copper/indium/gallium rotating target by controllable atmosphere cold spraying

A copper indium gallium and rotating target technology, which is applied in metal material coating process, coating, ion implantation plating, etc., can solve the problems of increasing target production cost, target off-target, arcing, etc., to reduce oxygen and Intervention of impurities, uniform coating composition without segregation, and compact coating structure

Active Publication Date: 2015-08-05
无锡舒玛天科新能源技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the copper indium gallium selenide targets produced are mainly small-sized planar targets or short-section hollow circular targets, which need to be spliced ​​and bound to prepare large-sized targets, that is, the target and the substrate tube are bound by indium welding. Together, indium is expensive, which increases the production cost of the target. Once the binding effect is poor, the target will miss the target. In severe cases, the sputtering equipment will fail or be scrapped
In addition, there is a gap between the binding target node and the node, causing arcing during target sputtering, affecting the coating quality and reducing work efficiency

Method used

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  • Copper/indium/gallium rotating target and method for preparing copper/indium/gallium rotating target by controllable atmosphere cold spraying
  • Copper/indium/gallium rotating target and method for preparing copper/indium/gallium rotating target by controllable atmosphere cold spraying
  • Copper/indium/gallium rotating target and method for preparing copper/indium/gallium rotating target by controllable atmosphere cold spraying

Examples

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Effect test

Embodiment 1

[0025] A method for preparing a copper indium gallium rotating target by controlled atmosphere cold spraying, comprising the following steps:

[0026] (1) Ultrasonic cleaning of the stainless steel substrate for 30 minutes, then drying and sandblasting, the sandblasting sand particles are brown corundum, and the particle size is 18 mesh;

[0027] (2) In an argon gas protective atmosphere, use a plasma spraying process to spray nickel-aluminum powder, and prepare a primer layer with a thickness of 0.1mm on the stainless steel substrate after sandblasting;

[0028] (3) In an argon gas protective atmosphere, use a plasma spraying process to spray copper indium powder, and prepare a transition layer with a thickness of 0.1mm on the stainless steel substrate sprayed with a primer layer;

[0029] (4) Use copper indium gallium powder with a D50 of 100 microns and a purity of not less than 99.99% as raw material, put the raw material into a planetary ball mill and grind it for 5 hours...

Embodiment 2

[0035] A method for preparing a copper indium gallium rotating target by controlled atmosphere cold spraying, comprising the following steps:

[0036] (1) Ultrasonic cleaning of the stainless steel substrate for 30 minutes, then drying and sandblasting, the sandblasting sand particles are brown corundum, and the particle size is 18 mesh;

[0037] (2) In an argon gas protective atmosphere, use a plasma spraying process to spray nickel-aluminum powder, and prepare a primer layer with a thickness of 0.15mm on the stainless steel substrate after sandblasting;

[0038] (3) In an argon gas protective atmosphere, use a plasma spraying process to spray copper indium powder, and prepare a transition layer with a thickness of 0.1mm on the stainless steel substrate sprayed with a primer layer;

[0039] (4) Use copper indium gallium powder with a D50 of 100 microns and a purity of not less than 99.99% as raw material, put the raw material into a planetary ball mill and grind it for 5 hour...

Embodiment 3

[0045] A method for preparing a copper indium gallium rotating target by controlled atmosphere cold spraying, comprising the following steps:

[0046] (1) Ultrasonic cleaning of the stainless steel substrate for 30 minutes, then drying and sandblasting, the sandblasting sand particles are brown corundum, and the particle size is 18 mesh;

[0047] (2) In an argon gas protective atmosphere, use a plasma spraying process to spray nickel-aluminum powder, and prepare a primer layer with a thickness of 0.1mm on the stainless steel substrate after sandblasting;

[0048] (3) In an argon gas protective atmosphere, use a plasma spraying process to spray copper indium powder, and prepare a transition layer with a thickness of 0.15mm on the stainless steel substrate sprayed with a primer layer;

[0049] (4) Use copper indium gallium powder with a D50 of 100 microns and a purity of not less than 99.99% as raw material, put the raw material into a planetary ball mill and grind it for 5 hour...

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Abstract

The invention provides a copper/indium/gallium rotating target and a preparation method thereof. The preparation method comprises such steps as ultrasonic cleaning, drying and sand spraying of a basal body stainless steel pipe; preparation of the basal body stainless steel pipe including a nickel/aluminum base layer; preparation of the basal body stainless steel pipe including a copper/indium or copper/gallium translation layer; and preparation of a copper/indium/gallium target on the treated basal body pipe. The preparation method uses D50 copper/indium/gallium powder of 100 microns as a raw material, and performs the ball grinding, the screening and the protective atmosphere cold spraying to prepare the copper/indium/gallium rotating target. The method is simple in process, convenient to operate and suitable for large-scale industrial production; the prepared target has high purity (not lower than 99.99%), great relative density (not lower than 97%), unlimited size, the thickness of 3-15 mm, the length of 4000 mm and the oxygen content not higher than 200 ppm.

Description

technical field [0001] The invention relates to a target material and a preparation method thereof, in particular to a copper indium gallium rotating target material and a method for preparing a copper indium gallium rotating target material by controlled atmosphere cold spraying. Background technique [0002] At present, with the warming of the global climate and the deterioration of the environment, people pay more and more attention to clean energy. The solar cell industry has grown rapidly over the past few decades. Due to its high conversion efficiency, copper indium gallium selenide thin film is widely used in solar cells. The thin-film copper indium gallium selenide solar cell is coated with a molybdenum electrode layer, a copper indium gallium selenide absorber layer, a cadmium sulfide buffer layer, an intrinsic zinc oxide, an aluminum-zinc oxide window layer and a surface contact layer on a glass substrate. According to the research report of Lux Research, the CIG...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C24/04
Inventor 徐从康
Owner 无锡舒玛天科新能源技术有限公司
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