Electron beam irradiation method for preparation of nitrogen-doped reducing graphene

An electron beam irradiation, graphene technology, applied in the field of radiation chemistry and graphene nanomaterials, can solve the problems of harsh conditions, high preparation cost, low output, etc., and achieve high supercapacitor performance, short preparation period, and large output. Effect

Inactive Publication Date: 2015-09-09
SHANGHAI UNIV
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Problems solved by technology

However, these N-doped methods have high preparation costs, harsh conditions and low yields.

Method used

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  • Electron beam irradiation method for preparation of nitrogen-doped reducing graphene
  • Electron beam irradiation method for preparation of nitrogen-doped reducing graphene
  • Electron beam irradiation method for preparation of nitrogen-doped reducing graphene

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Embodiment

[0019] The process and steps of the method for preparing nitrogen-doped reduced graphene by electron beam irradiation of the present invention are as follows:

[0020] 1. Take a certain amount of urea with an electronic balance, dissolve it in deionized water, and prepare a urea solution of 25 g / L; then add an appropriate amount of graphene oxide to the urea solution to make the mass of graphene oxide and urea The concentration ratio is 1:5, and the mixed solution is placed in an ultrasonic oscillator to vibrate for 2 hours, so that the solution is fully mixed;

[0021] 2. Add 2 mL of isopropanol to the mixed solution obtained in step 1, and then add an appropriate amount of ammonia water or ammonium acetate solution to adjust the pH value of the mixed solution to 9; place it in a magnetic stirrer and stir for 30 minutes to fully mix the solution Uniform;

[0022] 3. The fully mixed solution obtained in step 2 is placed in a container, and nitrogen is passed into it for 20 ...

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Abstract

The invention discloses an electron beam irradiation method for the preparation of nitrogen-doped reducing graphene. The method comprises the steps of: a, preparing a urea solution, adding graphene oxide, placing in an ultrasonic oscillator, and mixing the solution uniformly; b, adding isopropanol, then adding aqueous ammonia solution, and stirring the mixed solution in a magnetic stirrer for thorough mixing; c, placing the mixed solution in a sealed container, and introducing nitrogen to saturate the nitrogen in the solution; d, subjecting the nitrogen saturated mixed solution to irradiation treatment under electron beam irradiation generated by an electron accelerator; e, washing the irradiation reaction product with ethanol, washing with distilled water, and separating in a high speed centrifuge to remove unreacted ions; and f, drying the products from separation in a vacuum oven to obtain a black nitrogen-doped reducing graphene material. The method has the advantages of simple process, mild conditions, cheap and easily available raw materials, no toxic solvent and environment-friendliness; and the produced nitrogen-doped graphene material has a super capacitor performance.

Description

technical field [0001] The invention relates to a method for preparing nitrogen-doped reduced graphene by electron beam irradiation, and belongs to the fields of radiation chemistry and graphene nanometer materials. Background technique [0002] With the continuous depletion of non-renewable resources such as coal, oil, and natural gas, and the increasing environmental pollution, it is particularly urgent and important to research and develop new energy storage devices that can provide renewable, green, and clean energy for humans. In this context, supercapacitors emerged as the times require. It has the characteristics of both traditional capacitors and secondary batteries, and can provide higher specific energy than traditional capacitors, higher specific power than secondary batteries and longer battery life. It has broad application prospects in the fields of aerospace systems, communication engineering, computers and microelectronic devices, and is an excellent new ener...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 程伶俐王宇佳焦正蒋永潘赟
Owner SHANGHAI UNIV
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