High-thermal-conductivity reaction-sintered silicon carbide ceramic material and preparation method thereof

A ceramic material and high thermal conductivity technology, which is applied in the field of high thermal conductivity reaction sintered silicon carbide ceramic materials and its preparation, can solve the problems of unfavorable industrialization promotion and application, complicated preparation process, and increased production cost, so as to improve service reliability , The effect of simple preparation process and easy operation

Active Publication Date: 2015-09-23
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this invention adopts hot isostatic pressing process to prepare silicon carbide ceramic layer and graphene layer by hot isostatic pressing respectively, and then hot isostatic pressing after lam...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] A method for preparing a high thermal conductivity reaction sintered SiC ceramic material, comprising the following steps:

[0050] (1) Weigh 51 parts of D 50 2.5μm silicon carbide powder, 22 parts D 50 15μm silicon carbide powder, 9 parts D 50 30μm silicon carbide powder, 5 parts D 50 3μm graphene, 10 parts D 50 Add 0.5 μm carbon powder, 1.5 parts of stearic acid, 1 part of polyacrylic acid, and 0.5 parts of polyvinyl alcohol into 85 parts of deionized water, use silicon carbide ball stone as the grinding medium, and place in a nylon liner ball mill tank Ball milling and mixing for 8.5 hours to prepare SiC slurry;

[0051] (2) Spray granulate the SiC slurry prepared in step (1), control the moisture content of the granulated powder at 0.2wt%; then use an isostatic press to form cold isostatic pressing under the condition of 120MPa, hold the pressure for 3 minutes, Obtain a density of 1.90g / cm 3 body;

[0052] (3) Dry the high-density green body obtained in step ...

Embodiment 2

[0055] A method for preparing a high thermal conductivity reaction sintered SiC ceramic material, comprising the following steps:

[0056] (1) Weigh 53 parts of D 50 2.5μm silicon carbide powder, 24 parts D 50 10μm silicon carbide powder, 11 parts D 50 30μm silicon carbide powder, 2 parts D 50 3μm graphene powder, 7 parts D 50 Add 0.5 μm carbon powder, 1.5 parts of stearic acid, 1 part of tetramethylammonium hydroxide, and 0.5 parts of polyvinyl alcohol into 95 parts of deionized water, use silicon carbide ball stone as the grinding medium, and grind on nylon Ball milling and mixing for 12 hours in the liner ball milling tank to prepare SiC slurry;

[0057] (2) Spray granulate the SiC slurry prepared in step (1), control the moisture content of the granulated powder at 0.2-0.4%; then use an isostatic press to form cold isostatic pressing under the condition of 100MPa, and hold the pressure for 3 minutes , to obtain a density of 1.80g / cm 3 body;

[0058] (3) Dry the high...

Embodiment 3

[0061] A method for preparing a high thermal conductivity reaction sintered SiC ceramic material, comprising the following steps:

[0062] (1) Weigh 54 parts of D 50 4μm silicon carbide powder, 17 parts D 50 13μm silicon carbide powder, 8 parts D 50 25μm silicon carbide powder, 8 parts D 50 3 μm graphene, 10 parts of carbon powder with D50 of 0.5 μm, 1.5 parts of fatty acid glycerides, 1 part of polyacrylic acid, 0.5 parts of carboxymethyl cellulose, add 110 parts of deionized water, and use silicon carbide balls Stone is used as the grinding medium, and ball milled and mixed for 15 hours in a nylon liner ball mill tank to obtain SiC slurry;

[0063] (2) Spray granulate the SiC slurry prepared in step (1), control the moisture content of the granulated powder at 0.2-0.4%; then use an isostatic press to form cold isostatic pressing under the condition of 80MPa, and hold the pressure for 3 minutes , to obtain a density of 1.70g / cm 3 body;

[0064] (3) Dry the high-density ...

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Abstract

The invention relates to a high-thermal-conductivity reaction-sintered silicon carbide ceramic material and a preparation method thereof. The high-thermal-conductivity reaction-sintered silicon carbide ceramic material comprises 50-90wt.% of silicon carbide, 0.5-12.5wt.% of graphene, 1-3wt.% of surfactants, 0.5-2.5wt.% of dispersing agents and 0.3-1.5wt.% of binders. The high-thermal-conductivity reaction-sintered silicon carbide ceramic material is prepared by means of raw material mixing, shaping and reactive sintering for 8-12 hours at the temperature of 1650-1800 DEG C under a vacuum condition. The prepared SiC (silicon carbide) ceramic material has the advantages of high hardness, low thermal expansion coefficient, high thermal conductivity, more uniformity in material performance and higher service reliability.

Description

technical field [0001] The invention relates to a high thermal conductivity reaction sintered silicon carbide (SiC) ceramic material and a preparation method thereof, belonging to the field of inorganic non-metallic materials. Background technique [0002] SiC ceramics have the advantages of high hardness, high temperature resistance, oxidation resistance, good chemical stability, and good thermal shock resistance, making them widely used in industrial kilns, petroleum, metallurgy, chemical industry, machinery, aerospace and many other fields. In particular, the excellent thermodynamic properties of silicon carbide ceramics have broad application prospects in heat exchangers, regenerative combustion, electronic device packaging substrates and other occasions that require high thermal performance. [0003] Compared with pressureless sintered SiC ceramics, reaction sintered SiC ceramics have the advantages of low raw material price, near net shape, low sintering temperature (1...

Claims

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Application Information

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IPC IPC(8): C04B35/573C04B35/65
Inventor 张玉军李其松龚红宇孙海滨张衍双
Owner SHANDONG UNIV
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