Method for preparing CZTSSe film with liquid-tin heating continuous sulfuration and selenization method, CZTSSe film prepared through method and application of CZTSSe film

A technology of sulfide selenization and liquid tin, which is applied in the direction of ion implantation plating, coating, electrical components, etc., can solve the problems of poor temperature uniformity, low heating speed, high energy consumption, etc., and achieve high uniformity, high heating speed, The effect of low energy consumption

Active Publication Date: 2015-11-11
LINGNAN NORMAL UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a low energy consumption, high uniformity and fast heating speed for preparing copper, zinc, tin, sulfur and selenium in order to overcome the defects of low heating rate, poor temperature uniformity and high energy consumption in the existing copper-zinc-tin-sulfur-selenium film preparation method. Sulfide-Selenization Method for Absorption Layer of Selenium Thin Film Solar Cell

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing CZTSSe film with liquid-tin heating continuous sulfuration and selenization method, CZTSSe film prepared through method and application of CZTSSe film
  • Method for preparing CZTSSe film with liquid-tin heating continuous sulfuration and selenization method, CZTSSe film prepared through method and application of CZTSSe film
  • Method for preparing CZTSSe film with liquid-tin heating continuous sulfuration and selenization method, CZTSSe film prepared through method and application of CZTSSe film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Example 1 Liquid tin heating continuous sulfidation selenization device for preparing CZTSSe thin film according to the present invention

[0053] 1. A liquid tin heating continuous sulfide selenization device for preparing CZTSSe thin films, such as Figures 1 to 5 As shown, it includes a base 121, an outer cover 111, and a liquid tin pool 117; the base 121 and the outer cover 111 are connected by a sealing ring 119 to form a closed space; the liquid tin pool 117 is located in the closed space; the inner wall of the liquid tin pool 117 is provided with a heating chamber 114, a heating chamber Heating assembly 118 is arranged inside 114; Liquid tin pool 117 comprises two buffer zones before and after and the tin pools of several different temperature zones in the middle of the two buffer zones (such as Figure 6 shown).

[0054] Further, a plurality of rollers 115 are provided on the outer sides of the two side walls of the liquid tin pool 117 , and the upper edge of ...

Embodiment 2

[0060] Embodiment 2 prepares CZTSSe film

[0061] 1. The substrate is made of ordinary glass, soaked in organic solvents, absolute ethanol, deionized water, ultrasonically cleaned, rinsed with deionized water, and then dried for use.

[0062] 2. A Mo layer with a thickness of 1.0 μm was prepared on a glass substrate by a DC sputtering method.

[0063] 3. Then put the prepared Mo layer substrate into a DC sputtering chamber, and use CuS target, ZnS target, and Sn target to co-sputter to prepare a CuZnSnS quaternary alloy film with a thickness of 800nm, and control the composition ratio Cu / (Zn+ Sn)=0.8, Zn / Sn=1.1.

[0064] 4. A Se film with a thickness of 20 μm was evaporated on the surface of the alloy film by thermal evaporation.

[0065] 5. In the equipment of Example 1, the continuous temperature-raising sulfide-selenization of the sample was completed by means of continuous heating of liquid tin to obtain a CZTSSe thin film.

Embodiment 3

[0066] Embodiment 3 prepares CZTSSe film

[0067] 1. The substrate is made of stainless steel, soaked in organic solvents, absolute ethanol, deionized water, ultrasonically cleaned, rinsed with deionized water, and then dried for use.

[0068] 2. Preparation of SiO with a thickness of 0.5 μm on a stainless steel substrate by radio frequency sputtering 2 barrier layer, and then direct current sputtering a Mo layer with a thickness of 0.8 μm.

[0069] 3. Then put the prepared Mo layer substrate into the DC sputtering chamber, and use the CuZnSnS alloy target to sputter to prepare a CuZnSnS quaternary alloy film with a thickness of 700nm, and control the composition ratio Cu / (Zn+Sn)=0.8, Zn / Sn=1.1.

[0070] 4. A Se film with a thickness of 15 μm was vapor-deposited on the surface of the alloy film by thermal evaporation.

[0071] 5. In the equipment of Example 1, the continuous temperature-raising sulfide-selenization of the sample was completed by means of continuous heati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing a CZTSSe film with a liquid-tin heating continuous sulfuration and selenization method, the CZTSSe film prepared through the method and application of the CZTSSe film. The method includes the steps that a CuZnSnS alloy film or a CuS / ZnS / Sn multi-layer overlapped film is prepared on molybdenum-plating glass with a sputtering method to serve as a precursor; an Se film is evaporated on the CuZnSnS alloy film or the CuS / ZnS / Sn multi-layer overlapped film; liquid tin at different temperatures serves as heating sources, sulfuration and selenization are carried out on the film serving as the precursor under the sulphur-element-containing nitrogen atmosphere; and finally the CZTSSe film for a solar cell absorption layer is prepared. By means of the method, rapid temperature rising with the high evenness can be guaranteed, losses of the tin in a sample can be further suppressed, it is guaranteed that components of the sample are controllable, the quality of the sample is improved, the efficiency of a cell is improved accordingly, and the method for preparing the CZTSSe film for the solar cell absorption layer is low in energy consumption and high in evenness and temperature rising speed, and has the obvious beneficial effects in the aspects of the material and energy use rate and industrial production.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic materials and devices, more specifically, to a method for preparing a CZTSSe thin film by liquid tin heating and continuous sulfide selenization, as well as the CZTSSe thin film and its application. Background technique [0002] In recent years, with the gradual depletion of limited non-renewable resources such as oil and coal on the earth, the utilization and development of renewable energy has become more and more urgent. Among them, solar photovoltaic power generation has become the safest, most environmentally friendly and most potential competitor in renewable energy. At present, the bottleneck restricting the development of solar photovoltaic power generation industry lies in high cost and low conversion efficiency. From the perspective of material and manufacturing costs, thin-film solar cells are the best choice. In thin-film solar cells, copper-zinc-tin-sulfur-seleni...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58H01L31/032
Inventor 张军邵乐喜廖峻莫德云
Owner LINGNAN NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap