Method of reducing GaN HEMT device ohm contact resistance
A technology of ohmic contact and resistance, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc. It can solve the problems of reducing ohmic contact resistance and ohmic contact resistivity, so as to reduce ohmic contact resistance and improve ohmic metal surface and edge morphology, improving the effect of device contact resistivity
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[0023] (2) Preparation of composite media layer;
[0024] (3) Fabrication of Ni nano mask in ohmic area;
[0025] (4) Ni nano mask / SiO 2 Fabrication of nanopillars;
[0026] (5) Transfer of nanopillar pattern to Si 3 N 4 On the mask
[0027] (6) The formation of micropores in the barrier layer and channel layer region;
[0028] (7) Evaporation / stripping / annealing to form ohmic contact.
[0029] Attached below Figure 2-1~Figure 2-9 , Further describe the technical solution of the present invention:
[0030] (1) Using PECVD to grow 100nmSi on the GaN heterojunction material formed by AlGaN barrier layer 2 / GaN channel layer 1 3 N 4 3 and 100nmSiO 2 4 Composite media layer, such as diagram 2-1 Shown
[0031] (2) Apply a layer of AZ7908 photoresist on the sample by spin-off and pre-baking, define the source and drain areas through photolithographic exposure, development and post-baking processes, use electron beam evaporation equipment to evaporate 10nm Ni metal 5, Put the sample into the ac...
Embodiment 1
[0040] Reducing the ohmic contact resistance of GaNHEMT devices based on nano-micropore technology includes the following steps:
[0041] (1) The channel layer 1 of the GaN heterojunction material with two-dimensional electron gas is made of GaN, AlGaN or InGaN material, and the barrier layer 2 is made of AlGaN, InAlN or AlN material containing Si. 3 N 4 3 and SiO 2 4 Composite dielectric layer; the Si 3 N 4 3 and SiO 2 4The dielectric material can be grown by PECVD, sputtering and thermal evaporation methods, among which Si 3 N 4 3 and SiO 2 4The thickness of the medium is 50nm, Si 3 N 4 3 The etching rate of the material in the buffered hydrofluoric acid solution is higher than that of SiO 2 4 The material should be more than 5 times lower;
[0042] (2) Use photolithography to define the ohmic area, evaporate a thin layer of Ni metal 5 in the ohmic contact area, and peel off the thin Ni metal 5 in the ohmic area by a metal stripping process; the thickness of the thin Ni metal 5 is ...
Embodiment 2
[0050] Reducing the ohmic contact resistance of GaNHEMT devices based on nano-micropore technology includes the following steps:
[0051] (1) The channel layer 1 of the GaN heterojunction material with two-dimensional electron gas is made of GaN, AlGaN or InGaN material, and the barrier layer 2 is made of AlGaN, InAlN or AlN material containing Si. 3 N 4 3 and SiO 2 4 Composite dielectric layer; the Si 3 N 4 3 and SiO 2 4The dielectric material can be grown by PECVD, sputtering and thermal evaporation methods, among which Si 3 N 4 3 and SiO 2 4 The thickness of the medium is between 50nm and 200nm, Si 3 N 4 3 The etching rate of the material in the buffered hydrofluoric acid solution is higher than that of SiO 2 4 The material should be more than 6 times lower;
[0052] (2) Use photolithography to define the ohmic area, evaporate a thin layer of Ni metal 5 in the ohmic contact area, and peel off the thin Ni metal 5 in the ohmic area by a metal stripping process; the thickness of the ...
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