Preparation method of potassium-sodium niobate-barium zirconate-sodium bismuth titanate lead-free piezoelectric film with vertical phase boundary

A lead-free piezoelectric, potassium sodium niobate technology, applied in the direction of solid-state chemical plating, metal material coating process, coating, etc., can solve the problems of temperature instability, KNN-BZ ceramic piezoelectric performance decline, etc., to achieve Better structure, excellent electrical performance, and structural stability

Inactive Publication Date: 2015-12-30
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is a pity that this excellent piezoelectric performance only appears around room temperature. As the temperature increases, the piezoelectric performance of KNN-BZ ceramics decreases significantly, that is, the piezoelectric performance has obvious temperature instability.

Method used

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  • Preparation method of potassium-sodium niobate-barium zirconate-sodium bismuth titanate lead-free piezoelectric film with vertical phase boundary
  • Preparation method of potassium-sodium niobate-barium zirconate-sodium bismuth titanate lead-free piezoelectric film with vertical phase boundary
  • Preparation method of potassium-sodium niobate-barium zirconate-sodium bismuth titanate lead-free piezoelectric film with vertical phase boundary

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Experimental program
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Effect test

Embodiment 1

[0042] 1) Press 0.910K 0.5 Na 0.5 NbO 3 -0.080BaZrO 3 -0.01Bi 0.5 Na 0.5 TiO 3 The stoichiometric ratio, respectively excess (in moles) 10% of potassium acetate and sodium acetate was added to ethylene glycol methyl ether, magnetically stirred at room temperature until dissolved, forming a solution containing K, Na. Add barium acetate and bismuth acetate into a mixture of ethylene glycol methyl ether and glacial acetic acid (volume ratio 3:7), heat to 100°C and cool to room temperature after completely dissolving to form a solution containing Bi and Ba. Then tetra-n-butoxyzirconium is added dropwise into the solution containing Bi and Ba to form a solution containing Zr, Bi and Ba. Add tetrabutyl titanate into ethylene glycol methyl ether, and at the same time add acetylacetone whose molar number is twice that of tetrabutyl titanate as a stabilizer, stir magnetically at room temperature for 40 minutes to obtain a Ti-containing solution, and then add the Ti-containing Th...

Embodiment 2

[0046] 1) by 0.9125K 0.5 Na 0.5 NbO 3 -0.0775BaZrO 3 -0.01Bi 0.5 Na 0.5 TiO 3 The stoichiometric ratio, respectively excess (in moles) 10% of potassium acetate and sodium acetate was added to ethylene glycol methyl ether, magnetically stirred at room temperature until dissolved, forming a solution containing K, Na. Add barium acetate and bismuth acetate into a mixture of ethylene glycol methyl ether and glacial acetic acid (volume ratio 3:6), heat to 80°C and cool to room temperature after completely dissolving to form a solution containing Bi and Ba. Then tetra-n-butoxyzirconium is added dropwise into the solution containing Bi and Ba to form a solution containing Zr, Bi and Ba. Add tetrabutyl titanate into ethylene glycol methyl ether, and at the same time add acetylacetone whose molar number is 1.5 times that of tetrabutyl titanate as a stabilizer, stir magnetically at room temperature for 40 minutes to obtain a Ti-containing solution, and then add the Ti-containing ...

Embodiment 3

[0051] 1) by 0.915K 0.5 Na 0.5 NbO 3 -0.075BaZrO 3 -0.01Bi 0.5 Na 0.5 TiO 3 The stoichiometric ratio, respectively excess (in moles) 10% of potassium acetate and sodium acetate was added to ethylene glycol methyl ether, magnetically stirred at room temperature until dissolved, forming a solution containing K, Na. Add barium acetate and bismuth acetate into a mixture of ethylene glycol methyl ether and glacial acetic acid (volume ratio 3:5), heat to 80°C and cool to room temperature after completely dissolving to form a solution containing Bi and Ba. Then tetra-n-butoxyzirconium is added dropwise into the solution containing Bi and Ba to form a solution containing Zr, Bi and Ba. Add tetrabutyl titanate to ethylene glycol methyl ether, and at the same time add acetylacetone whose molar number is twice that of tetrabutyl titanate as a stabilizer, stir magnetically at room temperature for 50 minutes to obtain a Ti-containing solution, and then add the Ti-containing The solu...

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Abstract

The invention provides a preparation method of a potassium-sodium niobate-barium zirconate-sodium bismuth titanate lead-free piezoelectric film with a vertical phase boundary. A chemical solution deposition technique is adopted; a KNN-BZ-BNT precursor solution is spin-coated and deposited on a substrate; a compact and crack-free single layer crystal film is obtained by heat treatment. A KNN-BZ-BNT film with the thickness of 0.4 to 2 mu. m is obtained after a spin-coating-heat treatment technique is repeated for multiple times. Through modification of a polymer polyethylene pyrrolidone and/or Mn(2+) and Co(2+) or Fe(2+) and the like, the electrical properties, especially ferroelectric and piezoelectric properties, of the KNN-BZ-BNT film are improved.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric material preparation, and relates to a preparation method of piezoelectric thin film, in particular to a potassium sodium niobate-barium zirconate-bismuth sodium titanate (KNN-BZ-BNT) without vertical phase boundary. Preparation method of lead piezoelectric thin film. Background technique [0002] With the continuous development of integrated sensors, ultrasonic transducers, and microelectromechanical systems, research on piezoelectric thin films has attracted extensive attention. However, the existence of lead in the lead-based piezoelectric film commonly used at present will cause serious harm to human beings and the ecological environment during production, use and disposal, which is contrary to the sustainable development of human society, so there is no The study of lead piezoelectric thin films has aroused great interest of researchers. In several currently widely studied lead-free p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C20/08
Inventor 任巍王玲艳陈文赵金燕刘明
Owner XI AN JIAOTONG UNIV
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