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A kind of preparation method of crystalline silicon chip capacitor

A technology of crystalline silicon chip capacitors, which is applied in the field of preparation of crystalline silicon chip capacitors, can solve the problems of high cost, complicated process, and large energy consumption, and achieve the effects of low cost, high electric mobility, and low heating temperature

Active Publication Date: 2018-06-22
SHANGHAI JINPEI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, chip capacitors are generally made of ceramic chips. The production method of ceramic capacitors generally needs to prepare ceramic powder first, and then prepare ceramic chips. When preparing ceramic powder, high-temperature sintering is required, which not only consumes a lot of energy, but also the process complex and expensive

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1 The preparation method of crystalline silicon chip capacitor, this method comprises the steps:

[0028] Step 1. Dissolve 15kg of alkyd resin in 15kg of xylene, add 70kg of copper powder with a particle size of 1-10μm, stir and disperse evenly to obtain resin slurry, and set aside;

[0029] Step 2, cutting out a number of crystal silicon wafers with a length of 0.5 inches, a width of 0.4 inches and a thickness of 0.5 mm, and set them aside;

[0030] Step 3: Coating the resin slurry on the upper and lower surfaces of 80 crystalline silicon wafers respectively, then stacking them, drying them at 85°C to cure the resin, and obtaining a capacitor precursor;

[0031] Step 4. Roughen the side of the capacitor precursor to a roughness of 2.0-10umRa, then dry at 60°C for 5-10min, take it out, and spray at 0.3-0.4MPa at 60-120°C A layer of silver electrode with a thickness of 0.1mm is thermally sprayed on the bottom.

[0032] The use frequency of the silicon chip c...

Embodiment 2

[0033] The preparation method of embodiment 2 crystalline silicon chip capacitors, the method comprises the steps:

[0034] Step 1. Dissolve 5 kg of silicone resin in 5 kg of xylene, add 90 kg of silver powder with a particle size of 1-10 μm, stir and disperse evenly to obtain a resin slurry, and set aside;

[0035] Step 2, making some crystal silicon wafers with a length of 0.6 inches, a width of 0.3 inches, and a thickness of 0.5mm, for standby;

[0036] Step 3: Coating the resin slurry on the upper and lower surfaces of 100 crystalline silicon wafers respectively, then stacking them, drying them at 85°C to cure the resin, and obtaining a capacitor precursor;

[0037] Step 4. Roughen the side of the capacitor precursor to a roughness of 2.0-10umRa, then dry at 60°C for 5-10min, take it out, and spray at 0.3-0.4MPa at 60-120°C A layer of copper electrodes with a thickness of 0.1 mm is thermally sprayed on the bottom.

Embodiment 3

[0038] Embodiment 3 The preparation method of crystalline silicon chip capacitor, this method comprises the steps:

[0039] Step 1. Dissolve 10kg of solvent-based epoxy resin in 10kg of xylene, add 80kg of nickel powder with a particle size of 1-10μm, stir and disperse evenly to obtain a resin slurry, and set aside;

[0040] Step 2, making some crystal silicon wafers with a length of 0.5 inches, a width of 0.4 inches and a thickness of 0.5mm for future use;

[0041] Step 3: Coating the resin slurry on the upper and lower surfaces of 120 crystalline silicon wafers respectively, then stacking them, drying them at 85°C to cure the resin, and obtaining a capacitor precursor;

[0042] Step 4. Roughen the side of the capacitor precursor to a roughness of 2.0-10umRa, then dry at 60°C for 5-10min, take it out, and spray at 0.3-0.4MPa at 60-120°C A layer of zinc electrode with a thickness of 0.1 mm is thermally sprayed on the bottom.

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Abstract

The invention discloses a preparation method of a crystal silicon wafer type capacitor, which comprises the steps of coating the upper surface and the lower surface of a crystal silicon wafer with a resin paste containing metal powder; overlaying 80-120 crystal silicon wafers coated with the resin paste, drying the crystal silicon wafers at a temperature of 80-90 DEG C so as to acquire a capacitor precursor; and printing metal electrodes on the side surface of the capacitor precursor through a method of thermal spraying so as to acquire the crystal silicon wafer type capacitor. The preparation method has the advantages that the semiconductor performance of silicon crystal is excellent, the heating temperature of a base material is low in preparation of the capacitor, the construction time is short, and the preparation method is environment-friendly and pollution-free.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of a crystalline silicon chip capacitor. Background technique [0002] Chip capacitors have the characteristics of large capacity, small size, and easy chipping. They are one of the most widely used components in mobile communication equipment, radio frequency identification devices (RFID) and global positioning systems. At present, chip capacitors are generally made of ceramic chips. The production method of ceramic capacitors generally needs to prepare ceramic powder first, and then prepare ceramic chips. When preparing ceramic powder, high-temperature sintering is required, which not only consumes a lot of energy, but also the process Complicated and expensive. Contents of the invention [0003] The object of the present invention is to provide a method for preparing a crystalline silicon chip capacitor to solve the above-mentioned pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/30H01G4/08H01G4/008H01G4/232
Inventor 曾新仁
Owner SHANGHAI JINPEI ELECTRONICS
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