Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Micro-channel type incident window and production method thereof

A manufacturing method and a technology of an incident window, applied in the field of photoelectric detection, can solve problems such as complex structure, difficult preparation, and high cost of photodetectors, and achieve the effects of simple structure, easy preparation, and strong applicability

Active Publication Date: 2016-03-30
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
View PDF15 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The purpose of the present invention is to provide a micro-channel type entrance window and its manufacturing method. The entrance window has the functions of photoelectric emission and electron multiplication, which can effectively solve the shortcomings of existing photodetectors, such as complex structure, difficult preparation, and high cost. At the same time, the honeycomb structure of the incident window is used to increase the effective area of ​​the photocathode, increase the probability of incident photons being absorbed by the photocathode, and then improve the quantum efficiency of the photocathode

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Micro-channel type incident window and production method thereof
  • Micro-channel type incident window and production method thereof
  • Micro-channel type incident window and production method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A metal antimony cathode sensitive to X-rays is prepared by atomic layer deposition technology alone.

[0054] Step 1) ultrasonically clean the incident window in acetone, alcohol and deionized water for 10 minutes respectively;

[0055] Step 2) making a honeycomb structure on the incident window by using ordinary photolithography and ion beam etching or acid etching process;

[0056] Step 3) Perform high-temperature annealing on the entrance window etched into a honeycomb structure and then clean the entrance window again; (the cleaning process is the same as step 1)

[0057] Step 4) Put the above incident window into the atomic layer deposition system, and use the two precursor compounds of antimony to react to form a metal antimony film on the incident window at a temperature of 100 degrees. The thickness of the antimony film is displayed by a film thickness monitor , the general antimony film thickness is 6 nanometers to 40 nanometers.

Embodiment 2

[0059] A tellurium-cesium cathode sensitive to ultraviolet light is prepared by molecular beam epitaxy alone.

[0060] Step 1) The incident window was ultrasonically cleaned in acetone, alcohol and deionized water for 10 minutes each in sequence.

[0061] Step 2) making a honeycomb structure on the incident window by using ordinary photolithography and ion beam etching or acid etching process;

[0062] Step 3) Perform high-temperature annealing on the entrance window etched into a honeycomb structure and then clean the entrance window again; (the cleaning process is the same as step 1)

[0063] Step 4) Transfer the incident window to a vacuum system, grow a tellurium film on the incident window at room temperature, and observe the thickness of the tellurium film with a film thickness monitor, generally 20 nanometers in thickness;

[0064] Step 5) Raise the temperature of the vacuum chamber to 160 degrees, grow the cesium film, and observe the change of the photocurrent at the...

Embodiment 3

[0067] Such as image 3 Shown: Alkali metal photocathode is prepared by combining atomic layer deposition technology and molecular beam epitaxy technology.

[0068] Step 1) The incident window was ultrasonically cleaned in acetone, alcohol and deionized water for 10 minutes each in sequence.

[0069] Step 2) making a honeycomb structure on the incident window by using ordinary photolithography and ion beam etching or acid etching process;

[0070] Step 3) Perform high-temperature annealing on the entrance window etched into a honeycomb structure and then clean the entrance window again; (the cleaning process is the same as step 1)

[0071] Step 4) On the basis of the above-mentioned incident window substrate, a metal antimony (Sb) film is deposited on the surface of the substrate and the inner wall of the through hole by atomic layer deposition technology, and the thickness of the antimony film is about 8 nanometers. The atomic layer deposition technology can precisely contr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of photoelectric detection, and in particular relates to a micro-channel type incident window and a production method thereof. The micro-channel type incident window comprises an incident window substrate, wherein the incident window substrate is of the honeycomb structure including a plurality of through hole, the through holes are formed by common photoetching and ion beam etching or acid corrosion technology; and photoelectric cathode layers are deposited on the surface of the incident window substrate and in the plurality of through holes. The specific implementing method comprises the steps of cleaning the incident window substrate, etching the incident window substrate to form the honeycomb structure, cleaning the incident window substrate etched with the honeycomb structure for the second time, and at last preparing the photoelectric cathode layers on the surface of the incident window substrate and the honeycomb structure. The incident window has the advantages that the traditional photoelectric cathode layer preparation technology is combined with the micro-channel plate electron multiplication technology, photovoltaic conversion and electron multiplication functions are achieved directly through the micro-channel type photoelectric cathode technology, and the photoelectric detector is simplified in structure, reduced in cost, and meanwhile greatly improved in photoelectric cathode quantum efficiency.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a micro-channel incident window and a manufacturing method thereof. Background technique [0002] The photocathode is the core of photodetection and imaging devices such as photomultiplier tubes, streak cameras, and image intensifiers. Its function is to convert the incident weak light signals into electrical signals that can be detected through the photoelectric effect of the cathode material itself. In order to measure weak light signals, a common photodetector combines a photocathode with an electron multiplier to multiply and amplify the electrical signal. [0003] There are mainly two traditional electron multiplication methods, one is the dynode structure; the Chinese patent, the patent publication number is CN101924007B, the name is a photomultiplier tube, and the technology is disclosed. The specific scheme of the technology is: the surface is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J40/06H01J43/04H01J9/12H01L31/101H01L31/18
CPCH01J9/12H01J9/125H01J40/06H01J43/04H01L31/101H01L31/18Y02P70/50
Inventor 王兴田进寿白永林
Owner XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com