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Glass film containing rare-earth-ion-doped K2LaBr5 microcrystalline and preparation method thereof

A rare earth ion and glass thin film technology, which is applied in the field of rare earth ion doped K2LaBr5 microcrystalline glass thin film and its sol-gel preparation, can solve problems such as device development limitations, overcome incomplete uniformity, prevent decomposition and volatilization , the effect of high transmittance

Inactive Publication Date: 2016-04-13
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually thin film and fibrous materials are the most suitable raw materials for making such devices, so the current form of scintillation materials will have great restrictions on the development of future devices

Method used

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  • Glass film containing rare-earth-ion-doped K2LaBr5 microcrystalline and preparation method thereof
  • Glass film containing rare-earth-ion-doped K2LaBr5 microcrystalline and preparation method thereof
  • Glass film containing rare-earth-ion-doped K2LaBr5 microcrystalline and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Doped with rare earth ions K 2 LaBr 5 The preparation method of the glass thin film of crystallite comprises following specific steps:

[0042] (1), prepare the raw materials in molar ratio: trimethyl phosphate: aluminum sec-butoxide: gallium ethoxide: potassium bromide: lanthanum bromide: cerium bromide = 148: 10: 20: 20: 10: 1, weigh A total amount of 30 grams of analytically pure raw materials for preparation, stand-by;

[0043] (2), the hydrolysis of trimethyl phosphate: dissolve the trimethyl phosphate weighed in step (1) in dehydrated alcohol, the mol ratio of dehydrated alcohol and trimethyl phosphate is 2: 1, add acetylacetone rapidly , the volume ratio of trimethyl phosphate to acetylacetone is 1:0.8, and strong magnetic stirring is carried out, and distilled water is gradually added dropwise. The molar ratio of distilled water to trimethyl phosphate is 0.6:1, and the hydrolysis reaction is carried out at room temperature for 1 hour to prepare into solution ...

Embodiment 2

[0054] It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratio: trimethyl phosphate: aluminum sec-butoxide: gallium ethylate: potassium bromide: lanthanum bromide: europium bromide=130 : 20: 10: 30: 15: 5, weigh each raw material respectively; in step (7), the pulling speed of the glass substrate in the gel solution is controlled at 1 mm / s, and the pulling is repeated 5 times, each time Pull interval time is 15 minutes; In step (9), be warming up to 100 ℃ with the rate of 50 ℃ per hour, then heat up furnace to 340 ℃ with the rate of 50 ℃ per hour; In step (9), gradually heat up furnace to 560°C, and reacted at this temperature for 2 hours, and finally obtained Eu-containing 3+ Ion-doped K 2 LaBr 5 Microcrystalline 65P 2 o 5 -10Al 2 o 3 -5Ga 2 o 3 -15K 2 LaBr 5 -5EuBr 3 System glass film.

[0055] For prepared Eu-containing 3+ Ion-doped K 2 LaBr 5 Microcrystalline glass film for per...

Embodiment 3

[0057]It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratios: trimethyl phosphate: aluminum sec-butoxide: gallium ethylate: potassium bromide: lanthanum bromide: terbium bromide=144 : 14: 14: 24: 12: 2, weigh each raw material respectively; in step (7), the pulling speed of the glass substrate in the gel solution is controlled at 0.6 mm / s, and the pulling is repeated 3 times, each time Pull interval time is 15 minutes; In step (9), be warming up to 100 ℃ with the rate of 40 ℃ per hour, then heat up furnace to 340 ℃ with the rate of 40 ℃ per hour; In step (10), gradually heat up furnace to 550°C, and reacted at this temperature for 3 hours, and finally obtained Tb-containing 3+ Ion-doped K 2 LaBr 5 Microcrystalline 72P 2 o 5 -7Al 2 o 3 -7Ga 2 o 3 -12K 2 LaBr 5 -2EuBr 3 System glass film.

[0058] For prepared Tb-containing 3+ Ion-doped K 2 LaBr 5 Microcrystalline glass film for pe...

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Abstract

The invention discloses a glass film containing rare-earth-ion-doped K2LaBr5 microcrystalline and a preparation method thereof. The glass film comprises, in percent by mole, 65-74 mol% of phosphorus pentoxide, 5-10 mol% of aluminium oxide, 5-10 mol% of digallium trioxide, 10-15 mol% of K2LaBr5, and 1-5 mol% of a rare-earth bromide, wherein the rare-earth bromide is one of cerium bromide, europium bromide, terbium bromide and praseodymium bromide. The advantages comprise that the sol-gel method is a low-temperature wet chemical glass-preparation technology, the glass is obtained through hydrolysis of a precursor raw material and a polymerization chemical reaction, and therefore a film material can be prepared under a certain liquid viscosity, and the low-temperature synthetic conditions can effectively prevent decomposition and volatilization of the bromide raw materials.

Description

technical field [0001] The invention relates to a rare earth ion-doped microcrystalline glass film, in particular to a rare earth ion-doped K 2 LaBr 5 Microcrystalline glass film and its sol-gel preparation method. Background technique [0002] Scintillation material is a photofunctional material that can emit visible light under the excitation of high-energy rays (such as x-rays, γ-rays) or other radioactive particles, and can be widely used in nuclear medicine diagnosis, security inspection, anti-terrorism, high-energy physics and geological exploration and other fields. In recent years, with the rapid development of fields such as medical imaging and security inspection, there is a large demand for new scintillation materials with high performance. Excellent scintillation materials mainly have the following properties: high luminous efficiency, high material density, fast fluorescence decay, good radiation resistance and low production cost. [0003] As far as the cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C10/16
CPCC03C4/12C03C10/16C03C2203/20C03C2203/26C03C2203/52
Inventor 江东升夏海平盛启国冯治刚王成张健何仕楠汤庆阳
Owner NINGBO UNIV
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