Electrochemical treatment method for improving surface properties of copper zinc tin sulfide thin film
A copper-zinc-tin-sulfur, surface property technology, applied in the field of solar cells, can solve problems such as high cost and serious environmental pollution, and achieve the effects of low production cost, simple process and high recycling rate
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Embodiment 1
[0044] Embodiment 1 This embodiment is electrochemical treatment copper zinc tin sulfur thin film surface
[0045] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film 2 with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.
[0046] Step (1): Put the copper-zinc-tin-sulfur thin film material 2 in a quartz tube furnace for selenization (or sulfide) annealing. Surface Raman diagram of CuZnSnS film 2 after annealing figure 2 shown. The annealed copper-zinc-tin-sulfur thin film material is connected to the working electrode of the electrochemical workstation 1, and the connection part is only Mo4 and the substrate 3;
[0047] Step (2): Soak the connected copper-zinc-tin-sulfur film 2 in absolute ethanol for 1 to 2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;
[0048] Step (3): Put ...
Embodiment 2
[0051] Embodiment 2 This embodiment is the electrochemical treatment of copper zinc tin sulfur film surface
[0052] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.
[0053] Step (1): placing the copper-zinc-tin-sulfur film material in a quartz tube furnace for selenization (or sulfide) annealing. The annealed copper-zinc-tin-sulfur thin film material is connected to the working electrode of the electrochemical workstation 1, and the connection part is only Mo4 and the substrate 3;
[0054] Step (2): Soak the connected copper-zinc-tin-sulfur film 2 in absolute ethanol for 1 to 2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;
[0055] Step (3): Put the copper-zinc-tin-sulfur thin film 2 cleaned in step (2) into the treatment ...
Embodiment 3
[0058] Embodiment 3 This embodiment is electrochemically treating the surface of the copper-zinc-tin-sulfur thin film
[0059] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.
[0060] Step (1): placing the copper-zinc-tin-sulfur film material in a quartz tube furnace for selenization (or sulfide) annealing. The annealed copper-zinc-tin-sulfur thin film material is connected to the working electrode of the electrochemical workstation 1, and the connection part is only Mo4 and the substrate 3;
[0061] Step (2): Soak the connected copper-zinc-tin-sulfur film 2 in absolute ethanol for 1 to 2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;
[0062] Step (3): Put the copper-zinc-tin-sulfur thin film 2 cleaned in step (2) into the ...
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