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A fixed-point chemical modification method of surface graphene based on solid-phase photochemical reaction

A photochemical reaction and chemical modification technology, applied in the field of fixed-point chemical modification of surface graphene, can solve the problems of easily polluted environment, complex chemical modification methods and high cost, and achieve the effects of simple operation process, low cost and low risk.

Active Publication Date: 2017-08-25
黑龙江省工研院资产经营管理有限公司
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  • Description
  • Claims
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Problems solved by technology

[0005] The present invention aims to solve the problems that the existing surface graphene chemical modification method is complicated, easy to pollute the environment, and high in cost, and provides a fixed-point chemical modification method of surface graphene based on solid-phase photochemical reaction

Method used

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  • A fixed-point chemical modification method of surface graphene based on solid-phase photochemical reaction
  • A fixed-point chemical modification method of surface graphene based on solid-phase photochemical reaction
  • A fixed-point chemical modification method of surface graphene based on solid-phase photochemical reaction

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specific Embodiment approach 1

[0025] Specific embodiment one: this embodiment is based on the fixed-point chemical modification method of the surface graphene of solid-phase photochemical reaction, according to the following steps:

[0026] 1. Use 0.1-0.5mmol / L dilute hydrochloric acid to ultrasonically clean the copper foil for 2 minutes, then use deionized water to ultrasonically clean the copper foil for 10 minutes, then put it into a closed quartz tube, and evacuate it to below 0.1Pa ; Control the flow rate of 2-4mL / min to feed hydrogen, then raise the temperature to 1000-1050°C, and keep it for 5-10 minutes; then control the flow rate to 0.1-0.5mL / min to feed methane, keep it for 50-70 minutes, and then close the methane, Stop heating, turn off the hydrogen when the temperature drops to 200°C, and finally fill with argon and take out the copper foil with graphene growing on the surface;

[0027] 2. Use a spin coater to control the rotating speed to be 2000r / min. Spin coat a 4% polymethyl methacrylate ...

specific Embodiment approach 2

[0029] Embodiment 2: This embodiment is different from Embodiment 1 in that: the material to be loaded with graphene in step 2 is silicon dioxide, glass, single crystal quartz or silicon nitride. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0030] Specific embodiment three: what this embodiment is different from specific embodiment one or two is: the solute reactant of reactant solution is dibenzoyl peroxide or dilauroyl peroxide in step 3, and the solvent of reactant solution is acetone , ethanol, benzene, chloroform, ether or water. Others are the same as in the first or second embodiment.

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Abstract

A site-directed chemical modification method of surface graphene based on a solid-state photochemical reaction relates to a site-directed chemical modification method of surface graphene. The invention aims to solve the problem that existing surface graphene chemical modification methods are complex, are easy to pollute the environment and are high-cost. The method comprises the following steps: 1, preparing copper foil with graphene growing on the surface; 2, preparing a material with graphene supported on the surface; and 3, dropwise adding a reactant solution onto the material with graphene supported on the surface and air-drying, utilizing a focusing laser-induced site-directed triggered solid-state photochemical reaction, and finally cleaning with acetone or anhydrous ethanol so as to finish site-directed chemical modification method of surface graphene. The invention has the following advantages: operation process is simple; the focusing laser-induced solid-state reaction is easy to operate by personnel without professional knowledge, and has less risk than a liquid phase reaction; the reaction is controllable, cost is low, and reactants are industrial products and are extremely cheap; and there is no pollution. The method of the invention is used for site-directed chemical modification of surface graphene.

Description

technical field [0001] The invention relates to a fixed-point chemical modification method of surface graphene. Background technique [0002] Graphene is a two-dimensional nanomaterial composed of carbon atoms with sp2 hybrid orbitals forming a hexagonal honeycomb lattice. Graphene has many excellent properties, such as ultra-high electron mobility (2×10 5 cm 2 v -1 the s -1) , Young's modulus (1100GPa), thermal conductivity (5000W m -1 K -1 ), specific surface area (2630m 2 / g), light transmittance (97.7%), etc., so it has been generally favored by researchers from different fields such as physics, materials and chemistry, and has potential applications in transistors, sensors, clean energy, nano-enhanced composite materials and other fields. [0003] However, graphene has no band gap and is a semi-metallic material, so it cannot be directly used to prepare semiconductor devices, such as transistors and light-emitting devices. In order to open the band gap in graphe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184C01B32/194
CPCC01P2002/82C01P2004/03
Inventor 高波何梦慈
Owner 黑龙江省工研院资产经营管理有限公司
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