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Halogen-doped lead chalcogenide nanometer crystal and preparation method and application thereof

A compound and nanocrystal technology, applied in photovoltaic power generation, electrical components, circuits, etc., can solve the problems of rare n-type PbY nanocrystals, and achieve the effect of increasing the thickness of the active layer, increasing the built-in electric field, and simple preparation method.

Inactive Publication Date: 2016-07-06
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the most studied PbS nanocrystals, surface oxidation makes most of the nanocrystals synthesized by traditional methods appear as p-type, and n-type PbY nanocrystals are rarely reported.

Method used

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  • Halogen-doped lead chalcogenide nanometer crystal and preparation method and application thereof
  • Halogen-doped lead chalcogenide nanometer crystal and preparation method and application thereof
  • Halogen-doped lead chalcogenide nanometer crystal and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Example 1: Preparation of chlorine-doped PbS nanocrystals.

[0040] 1) Add 223mg (1mmol) of lead oxide, 700mg (2.5mmol) of oleic acid and 10g of 1-octadecene into a three-necked flask, stir and vacuumize at 100°C for 1 hour to obtain a lead precursor, which is ready for use;

[0041] 2) Nitrogen was introduced into the three-necked flask, and the temperature was adjusted to 120°C, 8.75 μL (0.1 mmol) TMSCl, 105 μL (0.5 mmol) (TMS) 2 After mixing S and 5mL 1-octadecene evenly, quickly inject it into the above-mentioned lead precursor with a syringe, and continue to react for 5 minutes;

[0042]3) After the reaction is completed, lower the water bath to room temperature, inject 8 mL of anhydrous n-hexane, transfer the reaction solution to a centrifuge tube, add isopropanol until the reaction solution becomes cloudy, centrifuge for 5 minutes in a centrifuge (8000 rpm), discard Remove the upper layer, then dissolve it with n-hexane, add acetone and centrifuge, discard the u...

Embodiment 2

[0043] Example 2: Preparation of chlorine-doped PbS nanocrystals.

[0044] 1) Add 223mg (1mmol) of lead oxide, 700mg (2.5mmol) of oleic acid and 10g of 1-octadecene into a three-necked flask, stir and vacuumize at 110°C for 2 hours to obtain a lead precursor, which is ready for use;

[0045] 2) Nitrogen was introduced into the three-necked flask, and the temperature was adjusted to 120°C, and 17.5 μL (0.2 mmol) TMSCl, 105 μL (0.5 mmol) (TMS) 2 After mixing S and 5mL 1-octadecene evenly, quickly inject it into the above-mentioned lead precursor with a syringe, and continue to react for 5 minutes;

[0046] 3) After the reaction is completed, lower the water bath to room temperature, inject 8 mL of anhydrous n-hexane, transfer the reaction solution to a centrifuge tube, add isopropanol until the reaction solution becomes cloudy, centrifuge for 5 minutes in a centrifuge (8000 rpm), discard Remove the upper layer, then dissolve it with n-hexane, add acetone and centrifuge, discard...

Embodiment 3

[0047] Example 3: Preparation of chlorine-doped PbS nanocrystals.

[0048] 1) Add 223mg (1mmol) of lead oxide, 700mg (2.5mmol) of oleic acid and 10g of 1-octadecene into a three-necked flask, stir and vacuumize at 110°C for 1 hour to obtain a lead precursor, which is ready for use;

[0049] 2) Nitrogen was introduced into the three-necked flask, and the temperature was adjusted to 120°C, 27 μL (0.3 mmol) TMSCl, 105 μL (0.5 mmol) (TMS) 2 After mixing S and 5mL 1-octadecene evenly, quickly inject it into the above-mentioned lead precursor with a syringe, and continue to react for 5 minutes;

[0050] 3) After the reaction is completed, lower the water bath to room temperature, inject 8 mL of anhydrous n-hexane, transfer the reaction solution to a centrifuge tube, add isopropanol until the reaction solution becomes cloudy, centrifuge for 5 minutes in a centrifuge (8000 rpm), discard Remove the upper layer, then dissolve it with n-hexane, add acetone and centrifuge, discard the up...

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Abstract

The invention discloses halogen-doped lead chalcogenide nanometer crystal and a preparation method and an application thereof. Specifically, the method comprises the following steps: (1) preparing a lead precursor from diphenylthiocarbazone, oleic acid and 1-octadecene; (2) carrying out reaction by a trimethylsilyl halogen compound, di(trimethylsilyl) chalcogenide, the 1-octadecene and the lead precursor obtained in the step (1); and (3) obtaining the halogen-doped lead chalcogenide nanometer crystal through after-treatment. By the precursor containing a halogen element, the halogen-doped lead chalcogenide nanometer crystal has good compatibility with the precursor containing chalcogen, and can almost be dissolved with the precursor freely; and the preparation method is simple and feasible. Compared with a traditional schottky structure, an open-circuit voltage and a short-circuit current of a device are greatly improved; meanwhile, the condition that a fill factor only has minimal attenuation is ensured; and the conversion efficiency is improved by about 75%.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a halogen-doped lead-oxygen compound nanocrystal, its preparation method, and its use in preparing solar cells. Background technique [0002] PbY (Y=sulfur, selenium, tellurium) of groups IV-VI has a large Bohr radius, making its quantum confinement effect particularly significant. Through size adjustment, the bandgap of nanocrystalline materials can be greatly adjusted, and its absorption spectrum can be well matched with the solar spectrum reaching the earth's surface. At the same time, it has the properties of large absorption coefficient, high electron mobility, and adjustable energy level. , making IV-VI quantum dots the most popular photovoltaic nanomaterials at this stage, and is expected to become a low-cost, high-efficiency solar cell for a new generation of solution process. [0003] However, the thin film based on PbY nanocrystals has a small exciton diff...

Claims

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Application Information

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IPC IPC(8): H01L31/0312H01L31/042
CPCY02E10/50H01L31/0312H01L31/03125H01L31/042
Inventor 马万里刘泽柯
Owner SUZHOU UNIV
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