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Method for preparing single-phase transparent conductive cuprous oxide film

A cuprous oxide, transparent and conductive technology, used in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of complex preparation process and harsh conditions, and achieve high deposition rate, good crystallinity, good The effect of electrical conductivity

Inactive Publication Date: 2016-08-03
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Aiming at the above-mentioned technical problems in the prior art, the present invention provides a method for preparing a single-phase transparent conductive cuprous oxide film. The method for preparing a single-phase transparent conductive cuprous oxide film should solve the problems in the prior art. The cuprous oxide film prepared by the method is not a single phase, and the preparation process is complex and the technical problems are harsh.

Method used

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  • Method for preparing single-phase transparent conductive cuprous oxide film
  • Method for preparing single-phase transparent conductive cuprous oxide film
  • Method for preparing single-phase transparent conductive cuprous oxide film

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Effect test

Embodiment 1

[0028] The DC reactive magnetron sputtering method was adopted at room temperature. A copper target is used as the sputtering target, high-purity oxygen is used as the reaction gas, and high-purity argon is used as the sputtering gas to deposit a cuprous oxide film on the substrate; wherein,

[0029] The copper target sputtering power is 40W, and the deposition time is 5min;

[0030] The oxygen flow rate is 5 sccm, and the argon flow rate is 5 sccm.

[0031] The specific operation steps are as follows:

[0032] 1. Use a dilute solution of an anionic surfactant (sodium fatty acid, etc., soapy water can be used) to pre-clean the substrate;

[0033] 2. Use acetone, alcohol and deionized water to ultrasonically clean the substrate for 10 minutes in sequence, and control the temperature at 0°C;

[0034] 3. The metal copper with a purity of 99.99% is used as the cathode target, the anode is connected to the vacuum chamber, the quartz substrate after ultrasonic cleaning is install...

Embodiment 2

[0039] The DC reactive magnetron sputtering method was adopted at room temperature. A copper target is used as the sputtering target, high-purity oxygen is used as the reaction gas, and high-purity argon is used as the sputtering gas to deposit a cuprous oxide film on the substrate; wherein,

[0040] The copper target sputtering power is 80W, and the deposition time is 8min;

[0041] The oxygen flow rate is 15 sccm, and the argon flow rate is 50 sccm.

[0042] The specific operation steps are as follows:

[0043] 1. Use a diluted solution of anionic surfactant (sodium fatty acid, etc., soapy water can be used) to pre-clean the substrate, and then use acetone, alcohol and deionized water to perform ultrasonic cleaning on the substrate for 10 minutes, and the temperature is controlled at 0 ℃;

[0044] 2. The metal copper with a purity of 99.99% is used as the cathode target, the anode is connected to the vacuum chamber, the quartz substrate after ultrasonic cleaning is instal...

Embodiment 3

[0049] The DC reactive magnetron sputtering method was adopted at room temperature. A copper target is used as the sputtering target, high-purity oxygen is used as the reaction gas, and high-purity argon is used as the sputtering gas to deposit a cuprous oxide film on the substrate; wherein,

[0050] The copper target sputtering power is 150W, and the deposition time is 10min;

[0051] The oxygen flow rate is 30 sccm, and the argon flow rate is 100 sccm.

[0052] The specific operation steps are as follows:

[0053] 1. Use a diluted solution of anionic surfactant (sodium fatty acid, etc., soapy water can be used) to pre-clean the substrate, and then use acetone, alcohol and deionized water to perform ultrasonic cleaning on the substrate for 10 minutes, and the temperature is controlled at 0 ℃;

[0054] 2. The metal copper with a purity of 99.99% is used as the cathode target, the anode is connected to the vacuum chamber, the quartz substrate after ultrasonic cleaning is insta...

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Abstract

The invention provides a method for preparing a single-phase transparent conductive cuprous oxide film. A direct current reaction magnetron sputtering method is adopted at the room temperature, a copper target serves as a sputtering target material, oxygen serves as reaction gas, argon serves as sputtering gas, the cuprous oxide film is deposited on a substrate, and deposition of the cuprous oxide film is conducted in a vacuum chamber with the vacuum degree being 6.0*10<4> Pa or above; the copper target sputtering power is 40-150 W, and the deposition time is 1-30 minutes; oxygen flow is 2-30 sccm, and argon flow is 5-100 sccm. The cuprous oxide film prepared from the method is transparent, conductive, high in deposition rate and high in controllability, has a single phase, good adhesiveness, uniformity and stability and has wide application prospect in the fields of heterojunction solar cells, photoelectric devices, gas sensing materials, photocatalysts, high-temperature superconductor materials, environmental purification and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and relates to a thin film, in particular to a method for preparing a single-phase transparent conductive cuprous oxide thin film. Background technique [0002] With the development of today's science and technology, information, energy and materials have become the three cornerstones of technological development, among which the research of semiconductor materials occupies a pivotal position. [0003] Cuprous oxide is a direct band gap semiconductor material that can be excited by visible light and has a regular octahedral cubic crystal structure, and has the characteristics of a P-type semiconductor. Its forbidden band width is about 2.17eV, which is in the best energy gap (1.5-3.0eV) for solar power generation, and the photoelectric conversion efficiency is as high as 20% under visible light irradiation, which has high practical value. [0004] Cuprous oxide is a non-toxic material wit...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35
CPCC23C14/087C23C14/0036C23C14/35
Inventor 洪瑞金王进霞陶春先张大伟
Owner UNIV OF SHANGHAI FOR SCI & TECH
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